Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device

Patent metadata

Field	Value
Publication number	US-2024207760-A1
Application number	US-202418440767-A
Country	US
Kind code	A1
Filing date	Feb 13, 2024
Priority date	Dec 9, 2015
Publication date	Jun 27, 2024
Grant date	—

Abstract

A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.

First claim

What is claimed is:

1 . A method for cleaning substrates, comprising:
rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device close to the surface of the substrate with a gap d between the ultra/mega sonic device and the surface of the substrate, wherein the high temperature chemical solution is fully filled in the gap d; turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water on the surface of the substrate for releasing bubbles generated by the ultra/mega sonic device, so as to prevent the bubbles from coalescing on the surface of the substrate; turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; drying the substrate.

2 . The method according to claim 1 , wherein the high temperature chemical solution is high temperature SCl.

3 . The method according to claim 1 , wherein during the step of turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle, the gap d is controlled by a vertical actuator, the waveform of the ultra/mega sonic power is programmable and pre-set, the profile of gap d changing is programmable and pre-set.

4 . The method according to claim 1 , wherein during the bubble releasing step, the delivering chemical solution is the same type as the cleaning chemical solution or different type from the cleaning chemical solution.

5 . The method according to claim 1 , wherein the first cleaning cycle and the second cleaning cycle are repeated a plurality of times, and one bubble releasing step is set between every two cleaning cycles.

6 . The method according to claim 5 , wherein the first cleaning cycle and the second cleaning cycle are the same.

7 . The method according to claim 5 , wherein the first cleaning cycle and the second cleaning cycle are different.

8 . A method for cleaning substrates, comprising:
rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering one type of high temperature chemical solution or deionized water on the surface of the substrate for cleaning the surface of the substrate; delivering one type of medium temperature chemical solution or deionized water on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device close to the surface of the substrate with a gap d between the ultra/mega sonic device and the surface of the substrate, co-working with the medium temperature chemical solution, wherein the cleaning chemical solution is fully filled in the gap d; turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; delivering a medium temperature chemical solution or deionized water on the surface of the substrate for releasing bubbles generated by the medium temperature chemical solution, so as to prevent the bubbles from coalescing on the surface of the substrate; turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; drying the substrate.

9 . The method according to claim 8 , wherein the medium temperature chemical solution is the same type as the high temperature chemical solution or different type from the high temperature chemical solution.

10 . The method according to claim 8 , wherein during the bubble releasing step, the delivering chemical solution is the same type as the cleaning chemical solution or different type from the cleaning chemical solution.

11 . The method according to claim 8 , wherein the first cleaning cycle and the second cleaning cycle are repeated a plurality of times, and one bubble releasing step is set between every two cleaning cycles.

12 . The method according to claim 11 , wherein the first cleaning cycle and the second cleaning cycle are the same.

13 . The method according to claim 11 , wherein the first cleaning cycle and the second cleaning cycle are different.

Assignees

• Acm Research Shanghai Inc

Inventors

• Chen Fuping
• Wang Hui
• Wang Xi
• Jia Shena
• Wang Danying
• Jiang Chaowei
• Dai Yingwei
• Wang Jian

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title