Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-2024128307-A1
Application number	US-202218275908-A
Country	US
Kind code	A1
Filing date	Jan 31, 2022
Priority date	Feb 8, 2021
Publication date	Apr 18, 2024
Grant date	—

Abstract

A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO 2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

First claim

1 . A substrate processing method comprising:
preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO 2 film is formed; supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

2 . The substrate processing method according to claim 1 , wherein the second metal element includes one or more elements selected from Co, Ni, Mo, W, V, Cr, and Nb.

3 . The substrate processing method according to claim 1 , wherein the metal solution is an aqueous solution of an inorganic acid salt containing the second metal element.

4 . The substrate processing method according to claim 1 , wherein a surface density of the second metal element on the surface of the high-dielectric film is 1×10 10 atoms/cm 2 or more and 1×10 15 atoms/cm 2 or less.

5 . The substrate processing method according to claim 1 , further comprising:
before the forming the doping layer, restoring an oxygen vacancy in the high-dielectric film with an oxidant.

6 . The substrate processing method according to claim 1 , further comprising:
after the forming the doping layer, restoring the oxygen vacancy in the high-dielectric film with the oxidant.

7 . The substrate processing method according to claim 5 , wherein the oxidant is an oxidizing chemical liquid.

8 . The substrate processing method according to claim 1 , further comprising:
after the forming the doping layer, restoring the oxygen vacancy in the high-dielectric film by heating the substrate in an atmosphere containing oxygen gas.

9 . The substrate processing method according to claim 1 , further comprising:
after the forming the doping layer, restoring the oxygen vacancy in the high-dielectric film by irradiating the substrate with an ultraviolet light in an atmosphere containing oxygen gas.

10 . The substrate processing method according to claim 1 , further comprising:
after the forming the doping layer, cleaning a back surface of the substrate opposite to the doping layer or a bevel of the substrate with a cleaning liquid, thereby removing the second metal element adhering to the back surface or the bevel.

11 . A substrate processing method comprising:
preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO 2 film is formed; supplying an organic solvent having a polarity to the substrate; and adsorbing the organic solvent onto a surface of the high-dielectric film, thereby forming an adsorption layer containing the organic solvent.

12 . The substrate processing method according to claim 11 , wherein the organic solvent includes a carbonyl compound or an amine compound.

13 . The substrate processing method according to claim 1 , wherein the high-dielectric film includes a zirconium oxide film or a hafnium oxide film.

14 . The substrate processing method according to claim 1 , wherein the high-dielectric film is formed on a first electrode, and
a second electrode is formed on the high-dielectric film.

15 . A substrate processing apparatus comprising:
a substrate holder configured to hold a substrate, on which a high-dielectric film having a higher permittivity than a SiO 2 film is formed; and a liquid supply configured to supply, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film, thereby forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

16 . A substrate processing apparatus comprising:
a substrate holder configured to hold a substrate, on which a high-dielectric film having a higher permittivity than a SiO 2 film is formed; and an organic solvent supply configured to supply an organic solvent having a polarity to the substrate, and adsorb the organic solvent on a surface of the high-dielectric film, thereby forming an adsorption layer containing the organic solvent.

Assignees

• Tokyo Electron Ltd

Inventors

• HIGUCHI Rintaro
• Nakamori Mitsunori
• Kagawa Koji
• Sekiguchi Kenji
• Nakabayashi Hajime
• Yonezawa Syuhei

Classifications

• H10P14/60

  of insulating materials · CPC title

• H10P14/46

  using a liquid · CPC title

• H10D1/684

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title