Composition of Transparent Conductive Material and Method for Fabricating the same

Patent metadata

Field	Value
Publication number	US-2024038912-A1
Application number	US-202118254861-A
Country	US
Kind code	A1
Filing date	Nov 30, 2021
Priority date	Nov 30, 2020
Publication date	Feb 1, 2024
Grant date	—

Abstract

A film comprising a set of layers including a first layer, a third layer and a second layer therebetween is described. The first layer comprises and/or is a transparent conductive oxide, TCO, having a formula: A 1 B 1 O 3-δ1 ; The third layer comprises and/or is a transparent wide-bandgap semiconductor oxide having a formula: A 3 B 3 0 3-δ3 ; The second layer comprises and/or is an oxide layer having a formula: A 1 α A 3 1-α B 1 O 3-δ2 or A 1 α A 3 1-α B 3 O 3-δ2 or A 3 B 1 β B 3 1-β O 3-δ2 or A 1 α A 3 1-α B 1 β B 3 1-β O 3-δ2 ; wherein 0<α, β<1, −0.5≤δ 1 , δ 2 , δ 3 ≤0.5.

First claim

1 . A film comprising a set of layers including a first layer, a third layer and a second layer therebetween;
wherein the first layer comprises and/or is a transparent conductive oxide, TCO, having a formula:
A 1 B 1 O 3-δ 1 ;
wherein the third layer comprises and/or is a transparent wide-bandgap semiconductor oxide having a formula:
A 3 B 3 O 3-δ3 ;
wherein the second layer comprises and/or is an oxide layer having a formula:
Aα 1 A 1-α 3 B 1 O 3−δ 2 or A α 1 A 1-α 3 B 3 O 3−δ 2 or A 3 Bβ 1 B 1-β 3 O 3-β 2 or Aα 1 A 1-α 3 B β 1 B 1-β 3 O 3-β 2 ;

wherein 0<α, β<1, −0.5≤δ 1 , δ 2 , δ 3 ≤0.5.

2 . The film according to claim 1 , wherein the first layer has the formula:

A

1
-
x

1
,
1

⁢

A
x

1
,
2

⁢

B

1
-
y

1
,
1

⁢

B
y

1
,
2

⁢

0

3
-

δ
1

⁢

or
⁢

(

A

1
,
1

⁢

B

1
,
1

⁢

O

3
-

δ

1
,
1

)

j

⁢

(

A

1
,
2

⁢

B

1
,
2

⁢

O

3
-

δ

1
,
2

)

k

;

wherein 0<x, y<1, −0.5≤δ 1 , (δ 1,1 +δ 1,2 )≤0.5 and/or 1≤j, k≤10.

3 . The film according to claim 1 , wherein A 1 is selected from Group 2 (Be, Mg, Ca, Sr, Ba, Ra; preferably Ca, Sr, Ba) and/or the Lanthanides (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu; preferably La, Pr, Nd).

4 . The film according to claim 1 , wherein B 1 is selected from Group 5 (V, Nb, Ta, db; preferably V, Nb, Ta), Group 6 (Cr, Mo, W, Sg; preferably Cr, Mo, W) and/or Group 10 (Ni, Pd, Pt, Ds; preferably Ni).

5 . The film according to claim 1 , wherein the first layer has an electron mobility in a range from 1 to 100 cm 2 V −1 s −1 , a carrier density in a range from 1×10 20 to 1×10 24 cm −3 , a transmittance in a range from 75% to 100% at a wavelength of 550 nm, a thickness in a range from 2 to 100 nm, an effective mass in a range from 1 to 10 m 0 and/or a conductivity in a range from 1,000 to 100,000 Scm −1 at room temperature.

6 . The film according to claim 1 , wherein A 3 and/or B 3 is selected for adjusting a Fermi level position in a conduction band of the TCO of the first layer.

7 . The film according to claim 1 , wherein the transparent wide-bandgap semiconductor oxide has the formula:

A

1
-
u

3
,
1

⁢

A
u

3
,
2

⁢

B

1
-
v

3
,
1

⁢

B
v

3
,
2

⁢

0

3
-

δ
3

⁢

or
⁢

(

A

3
,
1

⁢

B

3
,
1

⁢

O

3

Assignees

• Univ Liverpool

Inventors

• Stoner Jessica
• Alaria Jonathon
• Rosseinsky Matthew

Classifications

• H10H20/032

  of electrodes · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10F77/244 Primary

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H01L31/022466 Primary

  Electricity · mapped topic