Conductivity based on selective etch for GaN devices and applications thereof
US-9206524-B2 · Dec 8, 2015 · US
Fabrication method of strontium niobium oxynitride film having small carrier density and its use
US2018030602A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018030602-A1 |
| Application number | US-201715627493-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 20, 2017 |
| Priority date | Jul 28, 2016 |
| Publication date | Feb 1, 2018 |
| Grant date | — |
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Abstract
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The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10 18 cm −3 . The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 1×10 18 cm −3 , (II) a strontium niobium oxynitride film having carrier density not more than 1×10 18 cm −3 , (III) a photosemiconductor substrate comprising the strontium niobium oxynitride film, (IV) a hydrogen generation device comprising the photosemiconductor substrate, and (V) a hydrogen generation method using the photosemiconductor substrate. The present invention provides a fabrication method of a strontium niobium oxynitride film having small carrier density and its use.
First claim
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1 . A method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10 18 cm −3 . 2 . The method according to claim 1 , wherein a target used in the sputtering method is formed of strontium niobate; and the strontium niobium oxynitride film is grown in an atmosphere containing nitrogen. 3 . The method according to claim 2 , wherein the strontium niobate is represented by the chemical formula Sr 2 Nb 2 O 7 . 4 . The method according to claim 2 , wherein the atmosphere further contains oxygen. 5 . The method according to claim 2 , wherein the atmosphere further contains argon. 6 . The method according to claim 4 , wherein the atmosphere further contains argon. 7 . The method according to claim 1 , wherein the strontium titanate substrate has a single orientation plane; and the strontium niobium oxynitride film has a single orientation plane. 8 . The method according to claim 7 , wherein the single orientation plane of the strontium titanate substrate is an orientation plane of a (001) plane; and the single orientation plane of the strontium niobium oxynitride film is an orientation plane of a (001) plane. 9 . The method according to claim 7 , wherein the single orientation plane of the strontium titanate substrate is an orientation plane of a (110) plane; and the single orientation plane of the strontium niobium oxynitride film is an orientation plane of a (110) plane. 10 . The method according to claim 7 , wherein the single orientation plane of the strontium titanate substrate is an orientation plane of a (111) plane; and the single orientation plane of the strontium niobium oxynitride film is an orientation plane of a (111) plane. 11 . The method according to claim 1 , wherein the strontium titanate substrate is doped with at least one selected from the group consisting of niobium and lanthanum. 12 . A strontium niobium oxynitride having carrier density of not more than 1×10 18 cm −3 . 13 . The strontium niobium oxynitride according to claim 12 , wherein the carrier density is not more than 1×10 17 cm −3 . 14 . A strontium niobium oxynitride film having carrier density of not more than 1×10 18 cm −3 . 15 . The strontium niobium oxynitride film according to claim 14 , wherein the carrier density is not more than 1×10 17 cm −3 . 16 . The strontium niobium oxynitride film according to claim 14 , wherein the strontium niobium oxynitride film has a single orientation plane. 17 . The strontium niobium oxynitride film according to claim 16 , wherein the single orientation plane is an orientation plane of a (001) plane. 18 . The strontium niobium oxynitride film according to claim 16 , wherein the single orientation plane is an orientation plane of a (110) plane. 19 . The strontium niobium oxynitride film according to claim 16 , wherein the single orientation plane is an orientation plane of a (111) plane. 20 . A semiconductor photoelectrode comprising: a strontium titanate substrate; and a strontium niobium oxynitride film grown on the strontium titanate substrate, wherein the strontium niobium oxynitride film has carrier density of not more than 1×10 18 cm −3 . 21 . The semiconductor photoelectrode according to claim 20 , wherein the carrier density is not more than 1×10 17 cm −3 . 22 . The semiconductor photoelectrode according to claim 20 , wherein the strontium titanate substrate has a single orientation plane; and the strontium niobium oxynitride film has a single orientation plane. 23 . The semiconductor photoelectrode according to claim 20 , wherein the strontium titanate substrate is doped with at least one selected from the group consisting of niobium and lanthanum. 24 . A hydrogen generation device, comprising: a semiconductor photoelectrode according to claim 20 ; a counter electrode electrically connected to the semiconductor photoelectrode; a liquid in contact with the strontium niobium oxynitride film and the counter electrode; and a container containing the semiconductor photoelectrode, the counter electrode, and the liquid, wherein the liquid is water or an electrolyte aqueous solution; and hydrogen is generated on a surface of the counter electrode when the strontium niobium oxynitride film is irradiated with light. 25 . The hydrogen generation device according to claim 24 , wherein the carrier density is not more than 1×10 17 cm −3 . 26 . The hydrogen generation device according to claim 24 , wherein the strontium titanate substrate has a single orientation plane; and the strontium niobium oxynitride film has a single orientation plane. 27 . The hydrogen generation device according to claim 26 , wherein the strontium titanate substrate is doped with at least one selected from the group consisting of niobium and lanthanum.
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Chemistry & Metallurgy · mapped topic
using other particles than noble gas ions (C23C14/0036, C23C14/46 take precedence) · CPC title
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Reactive sputtering · CPC title
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- What does patent US2018030602A1 cover?
- The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×10 18 cm −3 . The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 1×…
- Who is the assignee on this patent?
- Panasonic Corp
- What technology area does this patent fall under?
- Primary CPC classification C25B1/003. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Feb 01 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).