Transparent Conductive Film and Fabrication Method Thereof, Display Substrate and Display Device
US-2016042829-A1 · Feb 11, 2016 · US
US2019103577A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019103577-A1 |
| Application number | US-201716086522-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 22, 2017 |
| Priority date | May 23, 2016 |
| Publication date | Apr 4, 2019 |
| Grant date | — |
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A method of fabricating a flexible transparent conductive electrode layer includes depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, annealing the correlated metal film with the UV pulses, and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing.
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What is claimed is: 1 . A method of fabricating a flexible transparent conductive electrode layer, comprising: depositing a correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate; annealing the correlated metal film with UV pulses; and maintaining a temperature of the flexible transparent substrate below 80° C. during the depositing and annealing. 2 . The method of claim 1 , wherein the annealing comprises annealing a first area of the correlated metal film until the first area has a first predetermined sheet resistance, and wherein the first area has a first predetermined shape. 3 . The method of claim 2 , wherein the first predetermined sheet resistance is lower than 10 Ω/□. 4 . The method of claim 2 , wherein the annealing further comprises annealing a second area of the correlated metal film until the second area has a second predetermined sheet resistance, and wherein the second area has a second predetermined shape. 5 . The method of claim 4 , wherein the first predetermined sheet resistance is lower than 10 Ω/□. 6 . The method of claim 5 , wherein the second predetermined sheet resistance is between 1 and 100 Ω/□. 7 . The method of claim 1 , wherein a roll-to-roll deposition process is used for the depositing of the correlated metal film on the flexible transparent substrate. 8 . The method of claim 1 , wherein the correlated metal film is SrVO 3 or CaVO 3 . 9 . The method of claim 3 , further comprising: depositing an organic light-emitting diode layer on the flexible transparent conductive electrode layer resulting in a flexible organic light-emitting diode lighting panel. 10 . A device comprising: an annealed, correlated metal film having a thickness between 10 nm and 100 nm on a flexible transparent substrate, wherein the correlated metal film is annealed using UV pulses while maintaining a temperature of the flexible transparent substrate below 80° C. , and wherein the correlated metal film and flexible transparent substrate include a plurality of areas each having different predetermined shapes and different predetermined sheet resistances. 11 . The device of claim 10 , wherein the correlated metal film and flexible transparent substrate are included in a touchscreen device, smart window film, or sensor. 12 . The device of claim 10 , wherein a sheet resistance is lower than 10 Ω/□ in at least one of the plurality of areas. 13 . The device of claim 12 , wherein a sheet resistance is between 1 and 100 Ω/□ in at least another of the plurality of areas. 14 . The device of claim 10 , wherein the correlated metal film and flexible transparent substrate are fabricated in a roll-to-roll process. 15 . The method of claim 1 , wherein the correlated metal film has a thickness between 10 nm and 50 nm. 16 . The device of claim 10 , wherein the annealed, correlated metal film has a thickness between 10 nm and 50 nm. 17 . The method of claim 1 , wherein the correlated metal film is of the form of ABO 3 with A being a single or mixture of Group IIA materials and B being a single or mixture of Group VB materials.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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