Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US-2021269914-A1 · Sep 2, 2021 · US
Film forming method
US2023420249A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023420249-A1 |
| Application number | US-202318333724-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 13, 2023 |
| Priority date | Jun 23, 2022 |
| Publication date | Dec 28, 2023 |
| Grant date | — |
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Abstract
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A film forming method of forming a metal-containing film on a substrate, the film forming method comprising: a) supplying a metal-containing gas to the substrate; b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas; and c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.
First claim
Opening claim text (preview).
What is claimed is: 1 . A film foaming method of forming a metal-containing film on a substrate, the film forming method comprising: a) supplying a metal-containing gas to the substrate; b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas; and c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both. 2 . A film foaming method of forming a stacked film on a substrate, the stacked film including a silicon-containing film and a metal-containing film, the film forming method comprising: a) forming the silicon-containing film; and b) forming the metal-containing film, wherein the b) includes b1) supplying a metal-containing gas to the substrate, b2) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas, and b3) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both. 3 . The film forming method according to claim 1 , wherein the c) is performed before the a). 4 . The film forming method according to claim 1 , wherein the c) is performed after the a). 5 . The film forming method according to claim 1 , wherein the c) is performed before and after the a). 6 . The film forming method according to claim 1 , wherein an atomic layer deposition (ALD) cycle including at least one of the a), at least one of the b), and at least one of the c) is repeated a plurality of times. 7 . The film forming method according to claim 1 , wherein the metal-containing film is an aluminum nitride film. 8 . The film forming method according to claim 2 , wherein the b3) is performed before the b1). 9 . The film forming method according to claim 2 , wherein the b3) is performed after the b1). 10 . The film forming method according to claim 2 , wherein the b3) is performed before and after the b1). 11 . The film forming method according to claim 2 , wherein an atomic layer deposition (ALD) cycle including at least one of the b1), at least one of the b2), and at least one of the b3) is repeated a plurality of times. 12 . The film forming method according to claim 2 , wherein the metal-containing film is an aluminum nitride film. 13 . The film forming method according to claim 2 , wherein a stacking cycle including at least one of the a) and at least one of the b) is repeated a plurality of times. 14 . The film forming method according to claim 2 , wherein the stacked film includes the silicon-containing film at a position closest to the substrate. 15 . The film forming method according to claim 2 , wherein the stacked film includes the silicon-containing film at a position farthest from the substrate.
Assignees
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Classifications
- H10P14/69391Primary
the material containing aluminium, e.g. Al2O3 · CPC title
containing silicon · CPC title
- H10P14/6339Primary
deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title
the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title
Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title
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- What does patent US2023420249A1 cover?
- A film forming method of forming a metal-containing film on a substrate, the film forming method comprising: a) supplying a metal-containing gas to the substrate; b) supplying a reactive gas to the substrate, the reactive gas being reactive with the metal-containing gas; and c) supplying a first gas to the substrate, the first gas containing a halogen gas, a hydrogen halide gas, or both.
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/69391. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).