Method of producing semiconductor device

Patent metadata

Field	Value
Publication number	US-2023387344-A1
Application number	US-202318310002-A
Country	US
Kind code	A1
Filing date	May 1, 2023
Priority date	May 31, 2022
Publication date	Nov 30, 2023
Grant date	—

Abstract

A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

First claim

What is claimed is:

1 . A method of producing a semiconductor device, the method comprising steps of:
detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after the step of forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect, wherein: a diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view, and said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

2 . The method of producing a semiconductor device as claimed in claim 1 , wherein a wavelength of the ultraviolet light is 190 nm or more and 400 nm or less, and a wavelength of the red or infrared light is 680 nm or more and 1550 nm or less.

3 . The method of producing a semiconductor device as claimed in claim 1 , wherein a material of the metal film comprises at least one of silver, aluminum, lead, copper, tin, zinc, or gold.

4 . The method of producing a semiconductor device as claimed in claim 1 , further comprising steps of:
before the step of detecting the defect, forming the semiconductor layer on a substrate, the step of forming the semiconductor layer comprising forming an n-side semiconductor layer, an active layer, and a p-side semiconductor layer on the substrate in this order from the substrate; after the step of removing said portion of the semiconductor layer, forming a first insulating film on the semiconductor layer, the first insulating film covering a region where said portion of the semiconductor layer has been removed; and forming, through the first insulating film and in the semiconductor layer, a first hole to expose the n-side semiconductor layer by removing a portion of the first insulating film, a portion of the p-side semiconductor layer, and a portion of the active layer.

5 . The method of producing a semiconductor device as claimed in claim 4 , further comprising steps of:
after the step of forming the first hole, forming a second insulating film over the first insulating film and in the first hole; forming a second hole through the second insulating film in the first hole to expose the n-side semiconductor layer; and forming a conductive portion electrically connected to the n-side semiconductor layer through the second hole.

6 . The method of producing a semiconductor device as claimed in claim 1 , wherein a difference between the diameter of said portion of the semiconductor layer and the diameter of said portion of the metal film is 1.0 μm or more and 100 μm or less.

7 . The method of producing a semiconductor device as claimed in claim 1 , wherein a thickness of the metal film is 0.5 μm or more and 5.0 μm or less.

8 . A method of producing a semiconductor device, the method comprising steps of:
detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; and after the step of forming the metal film, removing both a portion of the semiconductor layer by irradiation with a first laser emitting ultraviolet light, and a portion of the metal film by irradiation with a second laser emitting red or infrared light, wherein: said portion of the semiconductor layer includes the defect, a diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in the plan view, said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view, and by the step of removing said portion of the metal film, the semiconductor layer is exposed through the metal film.

9 . The method of producing a semiconductor device as claimed in claim 8 , wherein a wavelength of the ultraviolet light is 190 nm or more and 400 nm or less, and a wavelength of the red or infrared light is 680 nm or more and 1550 nm or less.

10 . The method of producing a semiconductor device as claimed in claim 8 , wherein a material of the metal film comprises at least one of silver, aluminum, lead, copper, tin, zinc, or gold.

11 . The method of producing a semiconductor device as claimed in claim 8 , further comprising steps of:
before the step of detecting the defect, forming the semiconductor layer on a substrate, the step of forming the semiconductor layer comprising forming an n-side semiconductor layer, an active layer, and a p-side semiconductor layer on the substrate in this order from the substrate; after the step of removing said portion of the semiconductor layer and said portion of the metal film, forming a first insulating film on the semiconductor layer, the first insulating film covering a region where said portion of the semiconductor layer has been removed; and forming, through the first insulating film and in the semiconductor layer, a first hole to expose the n-side semiconductor layer by removing a portion of the first insulating film, a portion of the p-side semiconductor layer, and a portion of the active layer.

12 . The method of producing a semiconductor device as claimed in claim 11 , further comprising steps of:
after the step of forming the first hole, forming a second insulating film over the first insulating film and in the first hole; forming a second hole through the second insulating film in the first hole to expose the n-side semiconductor layer; and forming a conductive portion electrically connected to the n-side semiconductor layer through the second hole.

13 . The method of producing a semiconductor device as claimed in claim 8 , wherein a difference between the diameter of said portion of the semiconductor layer and the diameter of said portion of the metal film is 1.0 μm or more and 100 μm or less.

14 . The method of producing a semiconductor device as claimed in claim 8 , wherein a thickness of the metal film is 0.5 μm or more and 5.0 μm or less.

15 . A method of producing a semiconductor device, the method comprising steps of:
detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; and after the step of forming the metal film, removing a portion of the semiconductor layer by irradiation with a first laser emitting ultraviolet light, said portion of the semiconductor layer including the defect, wherein, by the irradiation with the first laser, a first portion of the metal film is removed, and said first portion of the metal film overlaps with said portion of the semiconductor layer in a plan view; and after the step of removing said first portion of the metal film, removing an annular second portion of the metal film by irradiation with a second laser emitting red or infrared light, wherein: an outer diameter of said annular second portion of the metal film is greater than a diameter of said portion of the semiconductor layer and said first portion of the metal film in the plan view.

16 . The method of producing a semiconductor device as claimed in claim 15 , wherein a wavelength of the ultraviolet light is 190 nm or more and 400 nm or less, and a wavelength of the red or infrared light is 680 nm or more and 1550 nm or less.

17 . The method of producing a semiconductor device as claimed in claim 15 , wherein a material of the meta

Assignees

• Nichia Corp

Inventors

• Yamaguchi Yoshiki
• Hayashi Hiroki
• Okumura Satoshi
• Yamamoto Minoru
• Tamemoto Hiroaki

Classifications

• H10P74/232

  comprising connection or disconnection of parts of a device in response to a measurement · CPC title

• H10P74/20

  characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/01 Primary

  Manufacture or treatment · CPC title