Ion beam etching chamber with etching by-product redistributor

Patent metadata

Field	Value
Publication number	US-2023369024-A1
Application number	US-202318357370-A
Country	US
Kind code	A1
Filing date	Jul 24, 2023
Priority date	May 29, 2018
Publication date	Nov 16, 2023
Grant date	—

Abstract

In some embodiments, the present disclosure relates to a method of performing an etching process. The method includes generating a plasma within a plasma chamber in communication with a processing chamber. Ions from the plasma are accelerated toward a workpiece within the processing chamber to generate an ion beam. The ion beam performs an etching process that etches a material on the workpiece. A by-product from the etching process is moved to directly below one or more baffles within the processing chamber.

First claim

What is claimed is:

1 . A method of performing an etching process, comprising:
generating a plasma within a plasma chamber in communication with a processing chamber; accelerating ions from the plasma toward a workpiece within the processing chamber to generate an ion beam, wherein the ion beam performs an etching process that etches a material on the workpiece; and moving a by-product from the etching process to directly below one or more baffles within the processing chamber.

2 . The method of claim 1 , wherein moving the by-product from the etching process to directly below the one or more baffles comprises:
generating a temperature gradient within the processing chamber extending from a first temperature outside of the one or more baffles to lower second temperatures directly below the one or more baffles.

3 . The method of claim 2 , wherein the temperature gradient is greater than or equal to approximately 10° C.

4 . The method of claim 1 , wherein moving the by-product from the etching process to directly below the one or more baffles comprises:
generating a pressure gradient within the processing chamber extending from a first pressure outside of the one or more baffles to lower second pressures directly below the one or more baffles.

5 . The method of claim 4 , wherein the pressure gradient is greater than or equal to approximately 10 1 Torr.

6 . The method of claim 1 , further comprising:
introducing a gas into the plasma chamber, wherein the plasma is generated from the gas within the plasma chamber; and venting the processing chamber upon completion of the etching process and after moving the by-product from the etching process to directly below the one or more baffles.

7 . The method of claim 1 , wherein the one or more baffles comprise sidewalls that are separated by a space that continuously extends from directly below the workpiece to laterally past an outer edge of the workpiece.

8 . A method of performing an etching process, comprising:
providing ions from a plasma toward a workpiece within a processing chamber to perform an etching process that etches a material on the workpiece, wherein the processing chamber comprises a baffle arranged vertically between the workpiece and a lower surface of the processing chamber as viewed in a cross-sectional view of the processing chamber; and moving a by-product from the etching process from a first part of the lower surface that is on a first area laterally outside of a second area directly below the baffle to a second part of the lower surface that is directly below the baffle.

9 . The method of claim 8 , wherein the lower surface of the processing chamber continuously extends from a first end of the lower surface that is directly below the baffle to directly below the workpiece.

10 . The method of claim 8 , wherein an outer surface of the baffle contacts an interior sidewall of the processing chamber that faces the workpiece.

11 . The method of claim 8 , wherein the baffle comprises an outer sidewall that is directly below the workpiece, the workpiece laterally extending past the outer sidewall of the baffle in opposing directions.

12 . The method of claim 8 , wherein the material is disposed on a surface of the workpiece that faces at least partially towards the lower surface of the processing chamber.

13 . The method of claim 8 , wherein the workpiece is held by a rotatable stage assembly coupled to a chamber door of the processing chamber.

14 . The method of claim 8 , further comprising:
reducing a pressure within the processing chamber at a first time; introducing a gas into a plasma chamber at a second time after the first time; forming the plasma from the gas at a third time after the second time; accelerating the ions from the plasma towards the workpiece at a fourth time after the third time; and turning on a by-product redistributor at the fourth time, the by-product redistributor being configured to move the by-product of the etching process to below the baffle.

15 . A method of performing an etching process, comprising:
providing a substrate to within a processing chamber, the processing chamber comprising one or more baffles vertically between the substrate and a lower surface of the processing chamber; using a plasma to etch a material on the substrate, wherein a by-product of the material etched from the substrate is provided to the lower surface of the processing chamber, the lower surface of the processing chamber continuously extending from a first end of the lower surface that is directly below the one or more baffles to outside of the one or more baffles and directly below the substrate, as viewed along a cross-sectional view of the processing chamber; and transporting the by-product from a first part on the lower surface that is laterally outside of the one or more baffles to a second part of the lower surface that is directly below the one or more baffles.

16 . The method of claim 15 , wherein transporting the by-product comprises:
generating a temperature gradient within the processing chamber extending from a first temperature outside of the one or more baffles to a second temperature directly below the one or more baffles.

17 . The method of claim 16 , wherein the temperature gradient decreases in a direction from directly below the one or more baffles to laterally outside of the one or more baffles.

18 . The method of claim 15 , wherein transporting the by-product comprises:
generating a pressure gradient within the processing chamber extending from a first pressure outside of the one or more baffles to a second pressure directly below the one or more baffles.

19 . The method of claim 15 ,
wherein the one or more baffles comprise a first baffle arranged along a first sidewall of the processing chamber and a second baffle arranged along an opposing second sidewall of the processing chamber, as viewed along the cross-sectional view; and wherein the lower surface of the processing chamber continuously extends from the first end of the lower surface that is directly below the first baffle, to the first part of the lower surface, and to an opposing second end of the lower surface that is directly below the second baffle, as viewed along the cross-sectional view of the processing chamber.

20 . The method of claim 15 ,
wherein the one or more baffles comprise a first baffle arranged along a first sidewall of the processing chamber and a second baffle arranged along an opposing second sidewall of the processing chamber, as viewed along the cross-sectional view; and wherein the first baffle and the second baffle comprise sidewalls that face one another and that are directly above the lower surface, wherein the sidewalls are vertically separated from the lower surface by a non-zero distance and are laterally separated from one another by a space that continuously extends from directly below the substrate to laterally past an outermost edge of the substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Te-Hsien
• Tseng Lee-Chuan

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title