Method and apparatus for depositing a monolayer on a three dimensional structure

Patent metadata

Field	Value
Publication number	US-2016002784-A1
Application number	US-201414324907-A
Country	US
Kind code	A1
Filing date	Jul 7, 2014
Priority date	Jul 7, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam forming a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.

First claim

What is claimed is:

1 . A processing apparatus, comprising:
a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and configured to house a substrate that defines a substrate plane; an extraction system adjacent the plasma chamber and configured to direct an ion beam from the plasma to the substrate, the ion beam comprising ions that form a non-zero angle with respect to a perpendicular to the substrate plane; and a molecular chamber adjacent the process chamber, isolated from the plasma chamber and configured to deliver a molecular beam to the substrate, wherein the ion beam and molecular beam are alternately delivered to the substrate to form a monolayer comprising species from the ion beam and molecular beam.

2 . The processing apparatus of claim 1 , wherein the substrate is moved back and forth to alternately expose the substrate to the ion beam and to a molecular beam composed of silane (SiH 4 ), arsine (AsH 3 ), phosphine (PH 3 ), or diborane B 2 H 6 .

3 . The processing apparatus of claim 1 , further comprising a gas source configured to deliver a reactive gas to the plasma chamber, the reactive gas comprising at least one of: oxygen, nitrogen, nitrous oxide.

4 . The processing apparatus of claim 3 further comprising a bypass to deliver the reactive gas from the gas source directly to the process chamber without entering the plasma chamber.

5 . The processing apparatus of claim 4 further comprising a heater configured to heat the substrate to at least 300° C. when the reactive gas is delivered directly to the process chamber.

6 . The processing apparatus of claim 1 , wherein the process chamber comprises a first sub-chamber adjacent the plasma chamber, and a second sub-chamber adjacent the molecular chamber.

7 . The processing apparatus of claim 6 further comprising a substrate stage, wherein the substrate stage is configured to transport the substrate between the first sub-chamber and second sub-chamber through a seal that restricts gas communication first sub-chamber and second sub-chamber.

8 . The processing apparatus of claim 1 further comprising a rotary substrate stage wherein the rotary substrate stage is disposed within the process chamber and configured to move the substrate from a first position adjacent the plasma chamber to a second position adjacent the molecular chamber.

9 . The processing apparatus of claim 8 wherein the extraction system comprises an extraction aperture having a wedge shape, wherein the molecular chamber comprises a set of injectors that define a wedge shape.

10 . The processing apparatus of claim 8 wherein the plasma chamber defines a wedge shape and molecular chamber defines a wedge shaped chamber.

11 . The processing apparatus of claim 8 wherein the substrate stage is configured to hold a plurality of substrates.

12 . The processing apparatus of claim 1 further comprising a second plasma chamber configured to deliver second ion species and a second molecular chamber configured to deliver second molecular species.

13 . The processing apparatus of claim 1 , wherein the plasma chamber, molecular chamber and process chamber are arranged in a rotary chamber assembly, wherein the substrate is configured to rotate between a first position adjacent the plasma chamber and a second position adjacent the molecular chamber.

14 . The processing apparatus of claim 13 , further comprising a rotary substrate stage comprising a plurality of substrate holders and a plurality of pumping slots, wherein the rotary substrate stage is disposed within the process chamber.

15 . The processing apparatus of claim 13 , wherein the ion beam is a first ion beam, the plasma chamber is a first plasma chamber, and the molecular chamber is a first molecular chamber, wherein the rotary chamber assembly comprises:
a second plasma chamber; a second molecular chamber; and an extraction system adjacent the first plasma chamber and the second plasma chamber, the extraction system comprising a first extraction aperture that is coupled to the first plasma chamber to direct the first ion beam to the substrate, and a second extraction aperture that is coupled to the second plasma chamber to direct a second ion beam to the substrate.

16 . The processing apparatus of claim 1 , wherein the extraction system comprises an extraction aperture that generates the ion beam, the extraction aperture configured to modify a shape of a plasma sheath boundary adjacent the extraction aperture, wherein the ions exit the plasma sheath boundary at the non-zero angle.

17 . A method, comprising:
providing a substrate in a first position, the substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane, the substrate feature having at least one surface that extends at a non-zero angle with respect to the substrate plane; directing an ion beam through an extraction system adjacent the substrate while in the first position, the ion beam comprising angled ions that are incident on the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, the ion beam effective to form a first sub-monolayer comprising a first species on the substrate feature including the at least one surface; and directing a molecular beam to the substrate when the substrate is in a second position when the first sub-monolayer is disposed on the substrate feature, the molecular beam being effective to form a second sub-monolayer of a second species that is configured to react with the first sub-monolayer of the first species to form a monolayer of a product material on the substrate feature including the at least one surface.

18 . The method of claim 17 , further comprising transporting the substrate from the first position, wherein the substrate is in a first sub-chamber of a process chamber in the first position and the substrate is in a second sub-chamber of the process chamber in the second position that is isolated from the first sub-chamber.

Assignees

• Varian Semiconductor Equipment

Inventors

• Omstead Thomas R

Classifications

• H10P32/19

  Diffusion sources · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P32/1404

  using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase · CPC title