Film formation method

Patent metadata

Field	Value
Publication number	US-2023361163-A1
Application number	US-202118246391-A
Country	US
Kind code	A1
Filing date	Sep 10, 2021
Priority date	Sep 24, 2020
Publication date	Nov 9, 2023
Grant date	—

Abstract

This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

First claim

1 . A film forming method comprising:
a first film forming process of forming a dielectric film on a first conductive film; a second film forming process of forming a metal oxide film on the dielectric film; and a third film forming process of forming a second conductive film on the metal oxide film, wherein, in the second film forming process, the metal oxide film is formed by using heated oxygen gas and vapor of an organometallic compound.

2 . The film forming method of claim 1 , wherein the second film forming process comprises:
an adsorption process of adsorbing molecules of the organometallic compound to a surface of the dielectric film by supplying the vapor of the organometallic compound to the surface of the dielectric film; a first purge process of purging the surface of the dielectric film to which the molecules of the organometallic compound are adsorbed with an inert gas; a reaction process of oxidizing the molecules of the organometallic compound adsorbed to the surface of the dielectric film by supplying the heated oxygen gas to the surface of the dielectric film to which the molecules of the organometallic compound are adsorbed; and a second purge process of purging the surface of the dielectric film to which the molecules of the organometallic compound are oxidized with the inert gas.

3 . The film forming method of claim 2 , wherein, in the second film forming process, the oxygen gas is heated to a temperature within a range of 150 degrees C. or higher and 350 degrees C. or lower.

4 . The film forming method of claim 3 , wherein the organometallic compound contains a transition metal.

5 . The film forming method of claim 4 , wherein the transition metal is nickel.

6 . The film forming method of claim 5 , wherein the organometallic compound contains a cyclopentadienyl group.

7 . The film forming method of claim 6 , wherein the dielectric film is an oxide film containing at least one of zirconium, hafnium, aluminum, and titanium.

8 . The film forming method of claim 7 , wherein the dielectric film is a multilayer film containing a layer of at least one of zirconium oxide, hafnium oxide, aluminum oxide, and titanium oxide.

9 . The film forming method of claim 8 , wherein the first conductive film and the second conductive film are titanium nitride, tungsten, tungsten nitride, tantalum nitride, vanadium nitride, or metallic ruthenium.

10 . The film forming method of claim 1 , wherein, in the second film forming process, the oxygen gas is heated to a temperature within a range of 150 degrees C. or higher and 350 degrees C. or lower.

11 . The film forming method of claim 1 , wherein the organometallic compound contains a transition metal.

12 . The film forming method of claim 1 , wherein the organometallic compound contains a cyclopentadienyl group.

13 . The film forming method of claim 1 , wherein the dielectric film is an oxide film containing at least one of zirconium, hafnium, aluminum, and titanium.

14 . The film forming method of claim 1 , wherein the first conductive film and the second conductive film are titanium nitride, tungsten, tungsten nitride, tantalum nitride, vanadium nitride, or metallic ruthenium.

Assignees

• Tokyo Electron Ltd

Inventors

• Akiyama Koji
• Nakabayashi Hajime
• Kakimoto Akinobu
• KABUKI Nobutake
• Kawano Yumiko
• Otsuki Sara

Classifications

• H10P14/60

  of insulating materials · CPC title

• H10D84/00

  Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers · CPC title

• H10D1/692 Primary

  Electrodes · CPC title

• H01L28/60 Primary

  Electricity · mapped topic

• C23C16/45529

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title