Magnetic memory device

Patent metadata

Field	Value
Publication number	US-2023206975-A1
Application number	US-202217890625-A
Country	US
Kind code	A1
Filing date	Aug 18, 2022
Priority date	Dec 23, 2021
Publication date	Jun 29, 2023
Grant date	—

Abstract

Disclosed is a magnetic memory device comprising write and read word lines that extend in a first direction on a substrate, the write word line and the read word line spaced apart from each other in a second direction and parallel to a bottom surface of the substrate, first source/drain contacts on one side of the write word line and spaced apart from each other in the first direction, second source/drain contacts on one side of the read word line and spaced apart from each other in the first direction, magnetic tunnel junction patterns connected to the second source/drain contacts, and spin-orbit torque lines on the magnetic tunnel junction patterns and connected to the first source/drain contacts. The magnetic tunnel junction patterns are spaced apart from each other in a third direction. The spin-orbit torque lines are spaced apart from each other in the third direction.

First claim

1 . A magnetic memory device, comprising:
a write word line and a read word line that extend in a first direction on a substrate, and the write word line and the read word line are spaced apart from each other in a second direction, the first direction and the second direction intersecting each other and parallel to a bottom surface of the substrate; a plurality of first source/drain contacts on one side of the write word line and spaced apart from each other in the first direction; a plurality of second source/drain contacts on one side of the read word line and spaced apart from each other in the first direction; a plurality of magnetic tunnel junction patterns, each of the plurality of magnetic tunnel junction patterns correspondingly connected to a one of the plurality of second source/drain contacts; and a plurality of spin-orbit torque lines, each of the plurality of spin-orbit torque lines correspondingly on a one of the plurality of magnetic tunnel junction patterns and correspondingly connected to a one of the plurality of first source/drain contacts, wherein the plurality of magnetic tunnel junction patterns are spaced apart from each other in a third direction that is parallel to the bottom surface of the substrate and intersects the first direction and the second direction, and the plurality of spin-orbit torque lines are spaced apart from each other in the third direction.

2 . The magnetic memory device of claim 1 , further comprising:
a plurality of third source/drain contacts between the write word line and the read word line, the plurality of third source/drain contacts being spaced apart from each other in the first direction; and a plurality of bit lines that extend in the second direction, the bit lines being spaced apart from each other in the first direction, wherein the each of the plurality of bit lines are correspondingly connected to a one of the plurality of third source/drain contacts.

3 . The magnetic memory device of claim 1 , wherein each of the plurality of spin-orbit torque lines has one of a bar shape or an elliptical shape, the bar shape or the elliptical shape elongated in the second direction.

4 . The magnetic memory device of claim 3 , further comprising:
a plurality of source lines, each of the plurality of source lines correspondingly connected to a one of the plurality of spin-orbit torque lines, each of the plurality of spin-orbit torque lines includes a first edge portion and a second edge portion that are opposite to each other in the second direction, the first edge portion is connected to a corresponding one of the plurality of first source/drain contacts, and the second edge portion is connected to a corresponding one of the plurality of source lines.

5 . The magnetic memory device of claim 4 , wherein the plurality of source lines are correspondingly above the plurality of spin-orbit torque lines.

6 . The magnetic memory device of claim 5 , further comprising:
a first conductive contact that is connected to the first edge portion of each of the plurality of spin-orbit torque lines, wherein the first conductive contact is connected to a bottom surface of each of the plurality of spin-orbit torque lines, and the first edge portion is connected through the first conductive contact to the corresponding one of the first source/drain contacts.

7 . The magnetic memory device of claim 6 , further comprising:
a second conductive contact that is connected to the second edge portion of each of the plurality of spin-orbit torque lines, wherein the second conductive contact is connected to a top surface of each of the plurality of spin-orbit torque lines, and the second edge portion is connected through the second conductive contact to the corresponding one of the plurality of source lines.

8 . The magnetic memory device of claim 3 , wherein each of the plurality of spin-orbit torque lines includes:
a first edge portion and a second edge portion that are opposite to each other in the second direction; and a middle portion between the first edge portion and the second edge portion, wherein each of the plurality of magnetic tunnel junction patterns vertically overlaps the middle portion of one of the plurality of spin-orbit torque lines.

9 . The magnetic memory device of claim 8 , wherein a width in the first direction of the middle portion is greater than a width in the first direction of each of the first edge portion and the second edge portion.

10 . The magnetic memory device of claim 8 , wherein each of the plurality of magnetic tunnel junction patterns is on a bottom surface of one of the plurality of spin-orbit torque lines.

11 . A magnetic memory device, comprising:
a plurality of magnetic tunnel junction patterns on a substrate, the plurality of magnetic tunnel junction patterns spaced apart from each other along a first direction and a second direction, the first direction and the second direction intersecting each other and parallel to a bottom surface of the substrate; and a plurality of spin-orbit torque lines, each of the plurality of spin-orbit torque lines corresponding on a one of the plurality of magnetic tunnel junction patterns and spaced apart from each other along the first direction and the second direction, wherein when viewed in a plan view, immediately neighboring ones of the plurality of magnetic tunnel junction patterns are spaced apart from each other to reside at vertices of an imaginary polygon, immediately neighboring ones of the plurality of spin-orbit torque lines are spaced apart from each other to reside at the vertices of the imaginary polygon, and the imaginary polygon is an equilateral polygon.

12 . The magnetic memory device of claim 11 , wherein the imaginary polygon is a rhombus or a hexagon.

13 . The magnetic memory device of claim 11 , wherein
the imaginary polygon is a rhombus, four immediately neighboring ones of the plurality of magnetic tunnel junction patterns are correspondingly at the vertices of the imaginary polygon, and four immediately neighboring ones of the plurality of spin-orbit torque lines are correspondingly at the vertices of the imaginary polygon.

14 . The magnetic memory device of claim 13 , wherein the imaginary polygon is an equilateral rhombus.

15 . The magnetic memory device of claim 11 , wherein
the imaginary polygon is a hexagon, seven immediately neighboring ones of the plurality of magnetic tunnel junction patterns are correspondingly disposed at vertices and a center of the imaginary polygon, and seven immediately neighboring ones of the plurality of spin-orbit torque lines are correspondingly disposed at the vertices and the center of the imaginary polygon.

16 . The magnetic memory device of claim 15 , wherein the imaginary polygon is an equilateral hexagon.

17 . The magnetic memory device of claim 11 , further comprising:
a plurality of write word lines on the substrate and a plurality of read word lines on the substrate, the plurality of read and write word lines extending in the first direction and alternately arranged along the second direction, wherein each of the plurality of spin-orbit torque lines is connected to a first source/drain terminal of a write transistor that is configured to be controlled by a corresponding one of the plurality of write word lines, and each of the plurality of magnetic tunnel junction patterns is connected to a second source/drain terminal of a read transistor that is configured to be controlled by a corresponding one of the plurality of read word lines.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Yongjae
• Byun Jihun

Classifications

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• H01L29/82

  Electricity · mapped topic

• H01L27/228

  Electricity · mapped topic

• G11C11/1657

  Word-line or row circuits · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title