Slurry compositions for polishing metal layers, chemical mechanical polishing apparatuses using the same, and methods for fabricating semiconductor devices using the same

Patent metadata

Field	Value
Publication number	US-2023193080-A1
Application number	US-202218060120-A
Country	US
Kind code	A1
Filing date	Nov 30, 2022
Priority date	Dec 21, 2021
Publication date	Jun 22, 2023
Grant date	—

Abstract

Slurry compositions for chemical mechanical polishing, chemical mechanical polishing apparatuses using the same, and methods for fabricating a semiconductor device using the same are provided. The slurry composition for chemical mechanical polishing may include polishing particles in an amount of 0.1% to 10% by weight of the slurry composition, an oxidant in an amount of 0.1% to 5% by weight of the slurry composition, a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition. The thermo-sensitive agent may include metal nanoparticles or metal oxide nanoparticles, and water, wherein the slurry composition has a pH of 1 to 8.

First claim

What is claimed is:

1 . A slurry composition for chemical mechanical polishing, the slurry composition comprising:
polishing particles in an amount of 0.1% to 10% by weight of the slurry composition; an oxidant in an amount of 0.1% to 5% by weight of the slurry composition; a thermo-sensitive agent in an amount of 0.01% to 30% by weight of the slurry composition, the thermo-sensitive agent including metal nanoparticles or metal oxide nanoparticles; and water, wherein the slurry composition has a pH of 1 to 8.

2 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the thermo-sensitive agent has a thermal conductivity of 15 W/(m·K) or higher.

3 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the thermo-sensitive agent includes at least one of silver (Ag) nanoparticles, copper (Cu) nanoparticles, gold (Au) nanoparticles, aluminum (Al) nanoparticles, nickel (Ni) nanoparticles, iron (Fe) nanoparticles, beryllium oxide (BeO) nanoparticles, triiron tetroxide (Fe 3 O 4 ) nanoparticles, and diiron trioxide (Fe 2 O 3 ) nanoparticles.

4 . The slurry composition for chemical mechanical polishing of claim 3 , wherein the thermo-sensitive agent includes alpha iron oxide (α-Fe 2 O 3 ) nanoparticles.

5 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the polishing particles include at least one of silica, alumina, ceria, titania, zirconia, magnesia, germania, and mangania.

6 . The slurry composition for chemical mechanical polishing of claim 1 , wherein the oxidant includes at least one of hydrogen peroxide, hydrogen peroxide-urea, performic acid, peracetic acid, potassium periodate, ammonium peroxymonosulfate, potassium perchlorate, potassium perbromate, and potassium permanganate.

7 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:
a catalyst including an iron (Fe)-containing compound.

8 . The slurry composition for chemical mechanical polishing of claim 7 , wherein the catalyst includes iron (III) nitrate (Fe(NO 3 ) 3 ).

9 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:
an inhibitor including a nitrogen-containing compound.

10 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:
a stabilizer including an acidic compound.

11 . The slurry composition for chemical mechanical polishing of claim 1 , further comprising:
a biocide.

12 . A slurry composition for chemical mechanical polishing, the slurry composition comprising:
polishing particles including metal oxide; an oxidant including a peroxide compound; a pH adjuster; a thermo-sensitive agent including metal nanoparticles or metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher; and water.

13 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the thermo-sensitive agent includes at least one of silver (Ag) nanoparticles, copper (Cu) nanoparticles, gold (Au) nanoparticles, aluminum (Al) nanoparticles, nickel (Ni) nanoparticles, iron (Fe) nanoparticles, beryllium oxide (BeO) nanoparticles, triiron tetroxide (Fe 3 O 4 ) nanoparticles, and diiron trioxide (Fe 2 O 3 ) nanoparticles.

14 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the polishing particles include colloidal silica.

15 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the oxidant includes hydrogen peroxide.

16 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition has a pH of 1 to 8.

17 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition has a thermal conductivity of 0.5 W/(m·K) to 1.0 W/(m·K).

18 . The slurry composition for chemical mechanical polishing of claim 12 , wherein the slurry composition is a slurry composition for polishing a metal film.

19 . A method for fabricating a semiconductor device, the method comprising:
forming a metal film on a semiconductor substrate; and performing a chemical mechanical polishing process on the metal film, using a slurry composition for chemical mechanical polishing, wherein the slurry composition for chemical mechanical polishing includes:
polishing particles;
an oxidant;
a thermo-sensitive agent including metal nanoparticles or metal oxide nanoparticles having a thermal conductivity of 15 W/(m·K) or higher; and
water,
wherein the slurry composition has a pH of 1 to 8.

20 . The method for fabricating the semiconductor device of claim 19 , wherein the metal film includes at least one of tungsten (W), copper (Cu), ruthenium (Ru), molybdenum (Mo), aluminum (Al), and platinum (Pt).

Assignees

• Samsung Electronics Co Ltd

Inventors

• Byun Yea Rin
• Kim In Kwon
• Kim Sang Kyun
• Lee Hyo San
• Hwang Byung Keun

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H01L21/3212

  Electricity · mapped topic

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title