Display substrate and display device
US-12356809-B2 · Jul 8, 2025 · US
US2023189587A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023189587-A1 |
| Application number | US-202217972248-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 24, 2022 |
| Priority date | Dec 10, 2021 |
| Publication date | Jun 15, 2023 |
| Grant date | — |
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According to an aspect of the present disclosure, a display device includes a substrate including a display area in which a plurality of sub-pixels are disposed, and a non-display area. The display device includes a plurality of signal lines extending from the display area to the non-display area and configured to transmit an alternating current voltage. The display device includes a semiconductor layer disposed between the substrate and the plurality of signal lines and overlapping the plurality of signal lines.
Opening claim text (preview).
1 . A display device comprising: a substrate having thereon a display area in which a plurality of sub-pixels is disposed, and a non-display area; a plurality of signal lines extending from the display area to the non-display area, the plurality of signal lines being configured to transmit an alternating current voltage; and a semiconductor layer disposed between the substrate and the plurality of signal lines and overlapping the plurality of signal lines. 2 . The display device of claim 1 , wherein the substrate is made of transparent conductive oxide. 3 . The display device of claim 2 , wherein the semiconductor layer is made of any one of an oxide semiconductor, amorphous silicon, and polysilicon. 4 . The display device of claim 2 , wherein the semiconductor layer is either an N-type semiconductor layer or a P-type semiconductor layer. 5 . The display device of claim 1 , wherein the substrate is made of a transparent semiconductor material. 6 . The display device of claim 5 , wherein the semiconductor layer is made of any one of amorphous silicon and polysilicon. 7 . The display device of claim 5 , wherein the semiconductor layer is a P-type semiconductor layer. 8 . The display device of claim 1 , wherein the plurality of signal lines includes a plurality of gate lines. 9 . The display device of claim 1 , wherein the plurality of signal lines includes a plurality of data lines and a plurality of reference lines. 10 . The display device of claim 1 , wherein the plurality of signal lines includes a plurality of high-potential power lines. 11 . The display device of claim 1 , wherein each of the plurality of sub-pixels include a light-emitting area, and wherein the semiconductor layer is disposed on an area excluding the light-emitting area. 12 . The display device of claim 1 , further comprising: a gate drive circuit disposed in the non-display area and coupled to the plurality of gate lines, wherein the semiconductor layer is disposed to overlap a line disposed on a same layer as the plurality of gate lines, wherein the line is included in the gate drive circuit. 13 . A display device, comprising: a substrate made of an oxide material; a semiconductor layer disposed on the substrate; an insulating layer disposed on the semiconductor layer; at least one sub-pixel on the substrate, the at least one sub-pixel including: a light-emitting element; and a transistor coupled to the light-emitting element; and a plurality of signal lines coupled to the at least one sub-pixel; wherein the semiconductor layer is disposed between the substrate and the plurality of signal lines and overlapping the plurality of signal lines. 14 . The display device of claim 13 , wherein the substrate consists of a transparent conductive oxide. 15 . The display device of claim 13 , wherein the insulating layer is between the transistor and the substrate; and the semiconductor is between the insulating layer and the substrate. 16 . The display device of claim 13 , wherein the plurality of signal lines include: a gate line configured to transmit gate voltages to the at least one sub-pixel, wherein the semiconductor layer overlaps the gate line. 17 . The display device of claim 13 , wherein the plurality of signal lines include: a data line configured to transmit data voltages to the at least one sub-pixel; a reference line configured to transmit data voltages to the at least one sub-pixel; and wherein the semiconductor layer overlaps the data line and the reference line. 18 . The display device of claim 13 , wherein the plurality of signal lines include: a high-potential power line configured to transmit high power voltages to the at least one sub-pixel, wherein the semiconductor layer overlaps the high-potential power line. 19 . The display device of claim 13 , comprising: a light-emitting area between adjacent bank layers, the light emitting area including the light-emitting element, wherein the semiconductor layer overlaps the at least one sub-pixel except for the light-emitting area. 20 . The display device of claim 13 , wherein the plurality of signal lines, in operation, transmits an alternating current voltage.
using temporary substrates · CPC title
the pixel elements being capacitors · CPC title
Flexible substrates · CPC title
Interconnections, e.g. wiring lines or terminals · CPC title
the pixel elements being TFTs · CPC title
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