Etching Solution for Selectively Removing Silicon Over Silicon-Germanium Alloy From a Silicon-Germanium/ Silicon Stack During Manufacture of a Semiconductor Device
US-2019085240-A1 · Mar 21, 2019 · US
Cleaning agent composition and method for producing processed semiconductor substrate
US2023129238A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023129238-A1 |
| Application number | US-202117915240-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 30, 2021 |
| Priority date | Mar 31, 2020 |
| Publication date | Apr 27, 2023 |
| Grant date | — |
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Abstract
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The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.
First claim
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1 . A cleaning agent composition for use in removing an adhesive residue, wherein the composition comprises a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor comprises a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride. 2 . The cleaning agent composition according to claim 1 , wherein the metal corrosion inhibitor includes a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic anhydride, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic anhydride. 3 . The cleaning agent composition according to claim 2 , wherein the metal corrosion inhibitor includes a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic anhydride. 4 . The cleaning agent composition according to claim 1 , wherein the metal corrosion inhibitor includes lauric acid, dodecanedioic acid, or octadecenylsuccinic anhydride. 5 . The cleaning agent composition according to claim 1 , wherein the quaternary ammonium salt is a halogen-containing quaternary ammonium salt. 6 . The cleaning agent composition according to claim 5 , wherein the halogen-containing quaternary ammonium salt is a fluorine-containing quaternary ammonium salt. 7 . The cleaning agent composition according to claim 6 , wherein the fluorine-containing quaternary ammonium salt is tetra(hydrocarbyl)ammonium fluoride. 8 . The cleaning agent composition according to claim 7 , wherein the tetra(hydrocarbyl)ammonium fluoride includes at least one species selected from the group consisting of tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, and tetrabutylammonium fluoride. 9 . The cleaning agent composition according to claim 1 , wherein the adhesive residue is originating from an adhesive layer formed from an adhesive composition containing a component (A) which is curable through hydrosilylation. 10 . A method for producing a processed semiconductor substrate, the method comprising producing a laminate including a semiconductor substrate provided with a bump ball, a support substrate, and an adhesive layer formed from an adhesive composition; processing the semiconductor substrate of the produced laminate; separating the semiconductor substrate after processing; and removing an adhesive residue remaining on the separated semiconductor substrate with a cleaning agent composition, wherein the cleaning agent composition according to claim 1 is used as the cleaning agent composition.
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Classifications
used during dicing or grinding · CPC title
using temporarily an auxiliary support · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
- H10P70/20Primary
Cleaning during device manufacture · CPC title
the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title
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- What does patent US2023129238A1 cover?
- The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound di…
- Who is the assignee on this patent?
- Nissan Chemical Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P70/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Apr 27 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).