Chemical mechanical polishing pad and preparation thereof
US-11679531-B2 · Jun 20, 2023 · US
US2023112228A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023112228-A1 |
| Application number | US-202117500630-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 13, 2021 |
| Priority date | Oct 13, 2021 |
| Publication date | Apr 13, 2023 |
| Grant date | — |
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The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is a photopolymerizable composition containing a block copolymer, a UV curable acrylate, and a photoinitiator.
Opening claim text (preview).
We claim: 1 . A chemical mechanical polishing pad suitable for polishing at least one of a semiconductor substrate, an optical substrate and a magnetic substrate, the polishing pad having a polishing layer, the polishing layer comprising an extruded sheet, the extruded sheet comprising a photopolymerizable composition comprising a block copolymer, a UV curable acrylate, and a photoinitiator, wherein said block copolymer is present at an amount of greater than 50 wt %, based on the total weight of the extruded sheet, and wherein upon UV curing, the extruded sheet having a Shore D hardness in the range of 40 to 70. 2 . The chemical mechanical polishing pad of claim 1 , wherein said photopolymerizable composition further comprising an oil. 3 . The chemical mechanical polishing pad of claim 1 , wherein said block copolymer is a triblock copolymer. 4 . The chemical mechanical polishing pad of claim 1 , wherein said triblock copolymer is a styrenic block copolymer. 5 . The chemical mechanical polishing pad of claim 1 , wherein said stryrenic block copolymer is one or more members selected from the group consisting of a styrene-butadiene-styrene (SBS) block copolymer, a styrene-isoprene-styrene (SIS) block copolymer, a styrene-ethylene-butene-styrene (SEBS) block copolymer, a styrene-ethylene-propylene-styrene (SEPS) block copolymer, and mixtures thereof. 6 . The chemical mechanical polishing pad of claim 1 , wherein said block copolymer is present at an amount of greater than 65%. 7 . The chemical mechanical polishing pad of claim 1 , wherein said acrylate is one or more members selected from the group consisting of 1,3-butylene glycol diacrylate, 1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol diacrylate, and mixtures thereof. 8 . The chemical mechanical polishing pad of claim 1 , wherein the extruded sheet after UV curing having a Shore D hardness in the range of 45 to 55. 9 . The chemical mechanical polishing pad of claim 1 , wherein said photopolymerizable composition does not contain any organic solvent. 10 . The chemical mechanical polishing pad of claim 1 , wherein said photopolymerizable composition further comprising a plasticizer.
of semiconductor materials · CPC title
grafted on to block copolymers containing at least one sequence of polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds · CPC title
with sensitising agents · CPC title
characterised by the composition or properties of the pad materials · CPC title
characterised by a multi-layered structure · CPC title
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