Furnace opening structure, substrate processing apparatus and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2023089509-A1
Application number	US-202217885076-A
Country	US
Kind code	A1
Filing date	Aug 10, 2022
Priority date	Sep 21, 2021
Publication date	Mar 23, 2023
Grant date	—

Abstract

There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening structure including: an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

First claim

1 . A furnace opening structure comprising:
an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

2 . The furnace opening structure of claim 1 , wherein a second protrusion configured to be capable of covering at least a part of an inner wall of the upper inlet structure is provided at a lower end of the reaction tube.

3 . The furnace opening structure of claim 2 , wherein the second protrusion is configured to protrude from the lower end of the reaction tube so as to cover the inner wall of the upper inlet structure without being in contact with the lower inlet structure.

4 . The furnace opening structure of claim 1 , wherein the cooling medium comprises a liquid.

5 . The furnace opening structure of claim 1 , wherein a heater capable of heating an outer wall of the lower inlet structure is provided at the lower inlet structure.

6 . The furnace opening structure of claim 1 , wherein the reaction tube is configured such that a thickness of a portion thereof where the exhaust pipe is provided is set to be greater than a thickness of the other portion thereof.

7 . The furnace opening structure of claim 1 , wherein a lid connected to the lower inlet structure via a third seal is provided, and
wherein a space surrounded by the reaction tube, the upper inlet structure, the lower inlet structure and the lid is airtightly sealed by the first seal, the second seal and the third seal so as to be capable of being depressurized.

8 . The furnace opening structure of claim 1 , wherein the flow path provided inside the upper inlet structure is provided below the first protrusion, and the flow path provided inside the fixing structure is provided above the first protrusion.

9 . The furnace opening structure of claim 1 , wherein the reaction tube is constituted by: an inner tube in which a process chamber where a substrate is processed is provided; and an outer tube provided outside of the inner tube so as to surround the inner tube, and
wherein the upper inlet structure is configured to support the outer tube and the lower inlet structure is configured to support the inner tube.

10 . The furnace opening structure of claim 1 , wherein a coating process is performed on an inner wall of the lower inlet structure.

11 . A substrate processing apparatus comprising a furnace opening structure, wherein the furnace opening structure comprises:
an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube; a lower inlet structure connected to the upper inlet structure via a second seal; and a fixing structure connected to the upper inlet structure and configured to fix the first protrusion, wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

12 . The substrate processing apparatus of claim 11 , wherein the reaction tube is constituted by: an inner tube in which a process chamber where a substrate is processed is provided; and an outer tube provided outside of the inner tube so as to surround the inner tube, and
wherein the upper inlet structure is configured to support the outer tube and the lower inlet structure is configured to support the inner tube.

13 . The substrate processing apparatus of claim 11 , further comprising
a heater provided at an outer wall of the lower inlet structure and configured to be capable of heating the outer wall of the lower inlet structure.

14 . The substrate processing apparatus of claim 11 , further comprising
a temperature sensor provided at an outer wall of the lower inlet structure and configured to be capable of detecting a temperature set in advance.

15 . The substrate processing apparatus of claim 14 , further comprising
a controller configured to be capable of controlling a heater capable of heating the outer wall of the lower inlet structure based on a signal from the temperature sensor when a temperature of the outer wall of the lower inlet structure is lower than the temperature set in advance.

16 . The substrate processing apparatus of claim 12 , further comprising
a heating structure provided outside of the outer tube and configured to be capable of heating the process chamber, wherein a pre-set temperature of the heating structure is configured to be capable of being adjusted to a first temperature or higher.

17 . The substrate processing apparatus of claim 16 , further comprising
a cooling medium supplier configured to individually supply the cooling medium to the upper inlet structure and the fixing structure.

18 . The substrate processing apparatus of claim 16 , further comprising
a controller configured to be capable of controlling a temperature of each component constituting the furnace opening structure within a predetermined temperature range in accordance with the pre-set temperature of the heating structure by using a heater provided at an outer wall of the lower inlet structure.

19 . The substrate processing apparatus of claim 12 , further comprising
a heating structure provided outside of the outer tube and configured to be capable of heating the process chamber; a memory configured to store data indicating a correlation among a pre-set temperature of the heating structure, a temperature of a pre-designated portion of the upper inlet structure and a pre-designated portion of the lower inlet structure; and a controller configured to be capable of controlling an inlet heater provided at the lower inlet structure in accordance with the pre-set temperature of the heating structure.

20 . A method of manufacturing a semiconductor device comprising
processing a substrate arranged in a process chamber provided in a furnace opening structure, wherein the furnace opening structure comprises:
an upper inlet structure connected to a first protrusion provided at a lower portion of a reaction tube via a first seal, and configured to support the reaction tube;
a lower inlet structure connected to the upper inlet structure via a second seal; and
a fixing structure connected to the upper inlet structure and configured to fix the first protrusion,
wherein the upper inlet structure is provided below an exhaust pipe provided at the lower portion of the reaction tube, and
wherein the first protrusion is configured to be capable of being cooled by circulating a cooling medium through flow paths provided inside the upper inlet structure and the fixing structure, respectively.

Assignees

• Kokusai Electric Corp

Inventors

• Morita Shinya
• Nakashima Seiyo
• Abe Yoshitaka
• Harada Kazuhiro
• Koshi Yasunobu
• Nohara Shingo

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/12

  Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• F27B17/0025 Primary

  specially adapted for treating semiconductor wafers · CPC title