Substrate processing apparatus and method of manufacturing semiconductor chip using the same

Patent metadata

Field	Value
Publication number	US-2023082384-A1
Application number	US-202217730993-A
Country	US
Kind code	A1
Filing date	Apr 27, 2022
Priority date	Sep 13, 2021
Publication date	Mar 16, 2023
Grant date	—

Abstract

A substrate processing apparatus includes a chuck table including a mounting table having a mounting surface on which a substrate is mounted, wherein the mounting surface is a curved surface; and a laser supply head configured to irradiate the substrate attached to the mounting table with a laser beam.

First claim

1 . A substrate processing apparatus comprising:
a chuck table comprising a mounting table having a mounting surface configured such that a substrate is mounted on the mounting surface, wherein the mounting surface is a curved surface; and a laser supply head configured to irradiate the substrate mounted on the mounting table with a laser beam.

2 . The substrate processing apparatus of claim 1 , wherein the mounting surface comprises a concave surface.

3 . The substrate processing apparatus of claim 1 , wherein the mounting table comprises a plurality of vacuum channels extending from the mounting surface, and the substrate processing apparatus further comprises a vacuum pump configured to apply a vacuum pressure to the plurality of vacuum channels of the mounting table.

4 . The substrate processing apparatus of claim 3 , wherein the plurality of vacuum channels comprise at least one first vacuum channel extending from a central portion of the mounting surface of the mounting table and at least one second vacuum channel extending from an outer portion of the mounting surface of the mounting table, and the central portion of the mounting surface of the mounting table is configured to vacuum adsorb the central portion of the substrate, and the outer portion of the mounting surface of the mounting table is configured to vacuum adsorb the outer portion of the substrate.

5 . The substrate processing apparatus of claim 1 , wherein the chuck table is configured to forcibly modify the substrate so that the substrate has a curvature corresponding to a curvature of the mounting surface.

6 . The substrate processing apparatus of claim 5 , wherein the laser supply head is configured to focus a laser beam on a focusing point in the substrate when the substrate is modified by the chuck table.

7 . The substrate processing apparatus of claim 6 , wherein the laser supply head is configured to sequentially perform:
first laser scanning of irradiating a first focusing point in the substrate with the laser beam so that a first modification layer is formed in the substrate; and second laser scanning of irradiating a second focusing point in the substrate with the laser beam so that a second modification layer is formed in the substrate, and the first focusing point is closer to the mounting surface of the mounting table than the second focusing point.

8 . The substrate processing apparatus of claim 7 , further comprising a stage configured to move the mounting table in a direction perpendicular to an irradiation direction of the laser beam.

9 . The substrate processing apparatus of claim 8 , wherein the stage is configured to tilt the mounting table so that an incident angle of the laser beam to the mounting surface of the mounting table is adjusted.

10 . The substrate processing apparatus of claim 1 , wherein the chuck table is configured to adjust a curvature of the mounting surface of the mounting table.

11 . The substrate processing apparatus of claim 10 , wherein the mounting table comprises a cavity, and the substrate processing apparatus further comprises a pneumatic regulator configured to adjust pressure of the cavity by injecting or discharging air into or from the cavity.

12 . The substrate processing apparatus of claim 11 , wherein the pneumatic regulator is configured to adjust pressure of the cavity to modify the mounting surface of the mounting table between a flat first state and a second state in a concave form.

13 . A substrate processing apparatus configured to perform a stealth dicing process on a substrate, the substrate processing apparatus comprising:
a chuck table comprising a mounting table having a mounting surface configured such that the substrate is vacuum adsorbed on the mounting surface, wherein the mounting surface comprises a curved surface, and configured such that the substrate is vacuum adsorbed to the mounting surface so that the substrate is modified to have a curvature corresponding to a curvature of the mounting surface; and a laser supply head configured to irradiate the substrate attached to the mounting table with a laser beam.

14 . The substrate processing apparatus of claim 13 , wherein, in a cross-sectional view, the mounting surface of the mounting table extends in a curve form from one edge to another edge of the mounting surface of the mounting table.

15 . The substrate processing apparatus of claim 14 , wherein the mounting surface of the mounting table has a constant curvature.

16 . The substrate processing apparatus of claim 13 , wherein the mounting table comprises at least one first vacuum channel extending from a central portion of the mounting surface of the mounting table and at least one second vacuum channel extending from an outer portion of the mounting surface of the mounting table, and the mounting table is configured such that the central portion of the substrate is vacuum adsorbed to the central portion of the mounting surface of the mounting table and the outer portion of the substrate is vacuum adsorbed to the outer portion of the mounting surface of the mounting table.

17 . The substrate processing apparatus of claim 13 , wherein the laser supply head is configured to perform a plurality of laser scanning of irradiating different focusing points in the substrate with the laser beam, and a focusing point of subsequent laser scanning in the plurality of laser scanning is farther from the mounting surface of the mounting table than a focusing point of preceding laser scanning.

18 . The substrate processing apparatus of claim 13 , wherein the mounting table comprises a cavity, and the mounting table is configured such that a curvature of the mounting surface of the mounting table varies according to pressure of the cavity.

19 . A substrate processing apparatus configured to perform a stealth dicing process on a substrate, the substrate processing apparatus comprising:
a chuck table comprising a mounting table and a vacuum pump, wherein the mounting table comprises a mounting surface configured such that the substrate is vacuum adsorbed on the mounting surface and vacuum channels extending from the mounting surface and the vacuum pump is connected to the vacuum channels of the mounting table; a stage configured to move the mounting table; and a laser supply head configured to irradiate the substrate attached to the mounting table with a laser beam, wherein the mounting surface of the mounting table comprises a concave curved surface, and the chuck table modifies the substrate so that the substrate has a curvature corresponding to a curvature of the mounting surface of the mounting table, and the laser supply head is configured to irradiate a focusing point in the substrate modified by the chuck table with the laser beam.

20 . The substrate processing apparatus of claim 19 , wherein the mounting table comprises a cavity provided below the mounting surface, and the substrate processing apparatus further comprises a pneumatic regulator configured to adjust pressure of the cavity by injecting or discharging air into or from the cavity, and the mounting table is configured such that the curvature of the mounting surface of the mounting table varies depending on pressure of the cavity.

21 - 26 . (canceled)

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Junho
• Ko Yeongbeom
• Lee Hwayoung
• Shin Junggeun
• Sim Hyunsu
• Lee Kwangyong
• Lee Jongho

Classifications

• H10P72/78 Primary

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P72/0428 Primary

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• B23K26/53

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title

• B23K2103/56

  being semiconducting · CPC title