Coated substrate support assembly for substrate processing

Patent metadata

Field	Value
Publication number	US-2023009692-A1
Application number	US-202117368997-A
Country	US
Kind code	A1
Filing date	Jul 7, 2021
Priority date	Jul 7, 2021
Publication date	Jan 12, 2023
Grant date	—

Abstract

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

First claim

1 . A support body for supporting a substrate in a processing chamber, comprising:
a body having an upper surface; and a two-part coating disposed over the upper surface of the body, the two-part coating comprising:
a first coating layer extending a first radial distance from a center of the body, the first coating layer including at least one of a metal-containing material or alloy; and
a second coating layer disposed over the first coating layer, the second coating layer extending a second radial distance from the center of the body, the first radial distance greater than the second radial distance, wherein the second coating layer is non-metal.

2 . The support body of claim 1 , wherein the first coating layer is disposed over an entirety of the upper surface of the body.

3 . The support body of claim 1 , wherein the first coating layer is disposed over an entirety of the body, and wherein vertical sides of the body are free of the second coating layer.

4 . The support body of claim 1 , wherein the first coating layer is disposed over a substrate contact surface of the body and over an area of the body outside the substrate contact surface, and wherein the second coating layer is disposed over only the substrate contact surface of the body.

5 . The support body of claim 1 , wherein the second coating layer comprises a perfluorinated film.

6 . The support body of claim 5 , wherein the perfluorinated film comprises a self-assembled monolayer.

7 . The support body of claim 1 , wherein the first coating layer comprises electroless nickel plating, and wherein the second coating layer comprises silicon carbide.

8 . The support body of claim 1 , wherein the first coating layer comprises electroless nickel plating, and wherein the second coating layer comprises silicon.

9 . A system comprising:
a processing chamber comprising the support body of claim 1 and configured to clean a substrate while the substrate is supported by the support body; and an epitaxy chamber to grow an epitaxial layer on the substrate after the substrate is cleaned by the processing chamber.

10 . The support body of claim 1 , wherein the second coating layer comprises yttrium oxyfluoride.

11 . A system comprising:
a processing chamber configured to clean a substrate, the processing chamber comprising:
a chamber body;
a lid assembly disposed at an upper end of the chamber body, the lid assembly comprising:
a dual channel showerhead having a first set of channels providing fluid communication above and below a plane of the showerhead; and
a second set of channels providing fluid communication with a side port of the chamber body; and

a substrate support assembly at least partially disposed within the chamber body, the substrate support assembly configured to support the substrate in the processing chamber, the substrate support assembly comprising:
a support body having an upper surface, the upper surface extending a first radial distance from a center of the support body;
a stem coupled to the support body; and
a coating disposed over the support body, the coating comprising:
a first coating layer disposed over an entirety of the upper surface of the support body, the first coating layer comprising electroless nickel plating; and
a second coating layer disposed over the first coating layer, the second coating layer extending a second radial distance from the center of the support body, the second radial distance less than the first radial distance, and the second coating layer comprising silicon carbide.

12 . The system of claim 11 , wherein the first coating layer is further disposed over vertical sides of the support body and over the stem, and wherein the vertical sides of the support body and the stem are free of the second coating layer.

13 . The system of claim 11 , further comprising an epitaxy chamber to grow an epitaxial layer on the substrate after the substrate is cleaned by the processing chamber.

14 . The system of claim 11 , wherein the second coating layer is disposed over only a substrate contact surface of the support body.

15 . The system of claim 11 , wherein the second coating layer comprises a perfluorinated film.

16 . The system of claim 11 , wherein the second coating layer comprises yttrium oxyfluoride, wherein an individual concentration of yttrium atoms, oxygen atoms, and fluoride atoms in the yttrium oxyfluoride coating is within a range of about 25 atomic % to about 40 atomic %.

17 . A method of forming a surface coating on a support body of a processing chamber, comprising:
depositing a first material over an entire upper surface of the support body, thereby forming a first coating layer, the first material including at least one of a metal-containing material or alloy; and depositing a second material over the first coating layer only over a portion of the upper surface of the support body, thereby forming a second coating layer, wherein the second material is non-metal.

18 . The method of claim 17 , wherein the upper surface extends a first radial distance from a center of the support body, and wherein the second coating layer extends a second radial distance less than the first radial distance from the center of the support body.

19 . The method of claim 17 , further comprising depositing the first material over an entirety of the support body.

20 . The method of claim 17 , wherein the first coating layer comprises electroless nickel plating, and wherein the second coating layer comprises silicon carbide.

Assignees

• Applied Materials Inc

Inventors

• Lee Songjae
• Wang Hao
• Jorgensen David
• Huang Yi-Chiau

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/7604

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C16/4581 Primary

  characterised by material of construction or surface finish of the means for supporting the substrate · CPC title