High-Aspect Ratio Electroplated Structures And Anisotropic Electroplating Processes

US2022351893A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022351893-A1
Application numberUS-202217862183-A
CountryUS
Kind codeA1
Filing dateJul 11, 2022
Priority dateNov 18, 2016
Publication dateNov 3, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A device includes a dielectric layer having a first surface and a second surface. The device also includes a first set of high-aspect ratio electroplated structures disposed on the first surface of the dielectric layer and a second set of high-aspect ratio electroplated structures disposed on the second surface of the dielectric layer opposite the first set of high-aspect ratio electroplated structures.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method comprising: disposing a dielectric layer on a conductive substrate; forming a first set of high-aspect ratio electroplated structures from at least a portion of a second set of traces on the conductive substrate, the first set of high-aspect ratio electroplated structures disposed on a first surface of the dielectric layer; forming a second set of high-aspect ratio electroplated structures from at least a portion of a second set of traces included on the dielectric layer, the set of high-aspect ratio electroplated structures disposed on a second surface of the dielectric layer. 2 . The method of claim 1 , further comprising: disposing a second dielectric layer on the first set of high-aspect ratio electroplated structures. 3 . The method of claim 1 , further comprising: disposing a third dielectric layer on the second set of high-aspect ratio electroplated structures. 4 . The method of claim 1 , wherein the dielectric layer includes a via to electrically couple at least one high-aspect ratio electrical plated structure of the first set of high-aspect ratio electroplated structures with at least one high-aspect ratio electrical plated structure of the second set of high-aspect ratio electroplated structures. 5 . The method of claim 1 , wherein the first set of high-aspect ratio electroplated structures and the second set of high-aspect ratio electroplated structures are configured to form an inductive coupling coil. 6 . The method of claim 1 , further comprising: forming a coil having two outer coil sections and an inner coil section between the two outer coils. 7 . The method of claim 1 , further comprising: disposing a first terminal pad coupled with at least one high-aspect ratio electrical plated structure of the first set of high-aspect ratio electroplated structures. 8 . The method of claim 7 , wherein the first terminal pad is a nickel terminal plated with a gold layer. 9 . The method of claim 1 , further comprising: forming at least a portion of the first set of high-aspect ratio electroplated structures using a crown plating process. 10 . The method of claim 1 , wherein the second set of high-aspect ratio electroplated structures are formed by etching the conductive substrate. 11 . The method of claim 1 , further comprising: forming a first metal crown portion over at least a portion of each trace of the second set of traces using a crown plating process. 12 . A method for manufacturing a coil, the method comprising: etching or plating a conductive substrate to form a first plurality of traces; disposing a dielectric layer on the conductive substrate; disposing a second plurality of traces on the dielectric layer; forming a first set of high-aspect ratio electroplated structures disposed on the dielectric layer; and forming a second set of high-aspect ratio electroplated structures disposed on a surface of the dielectric layer opposite the first set of high-aspect ratio electroplated structures. 13 . The method of claim 12 , wherein the dielectric layer includes a via to electrically couple at least one high-aspect ratio electrical plated structure of the first set of high-aspect ratio electroplated structures with at least one high-aspect ratio electrical plated structure of the second set of high-aspect ratio electroplated structures. 14 . The method of claim 12 , wherein the first set of high-aspect ratio electroplated structures and the second set of high-aspect ratio electroplated structures form a first coil section of the coil. 15 . The method of claim 14 , further comprising: forming a third set of high-aspect ratio electroplated structures and a fourth set of high-aspect ratio electroplated structures to form a second coil section of the coil. 16 . The method of claim 15 , further comprising: forming a fifth set of high-aspect ratio electroplated structures and a sixth set of high-aspect ratio electroplated structures to form a third coil section of the coil. 17 . The method of claim 16 , wherein the first coil section is electrically coupled with the second coil section and the third coil section. 18 . The method of claim 16 , wherein the second coil section is electrically coupled with the third coil section. 19 . The method of claim 12 , wherein the second set of high-aspect ratio electroplated structures are formed by etching the conductive substrate. 20 . The method of claim 19 , wherein at least a portion of the second set of high-aspect ratio electroplated structures are formed using a crown plating process.

Assignees

Inventors

Classifications

  • by thin film techniques · CPC title

  • Coils (superconducting coils H01F6/06; fixed inductances of the signal type H01F17/00) · CPC title

  • Electroplating of selected surface areas · CPC title

  • Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating · CPC title

  • Electroplating characterised by the article coated · CPC title

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What does patent US2022351893A1 cover?
A device includes a dielectric layer having a first surface and a second surface. The device also includes a first set of high-aspect ratio electroplated structures disposed on the first surface of the dielectric layer and a second set of high-aspect ratio electroplated structures disposed on the second surface of the dielectric layer opposite the first set of high-aspect ratio electroplated st…
Who is the assignee on this patent?
Hutchinson Technology
What technology area does this patent fall under?
Primary CPC classification H01F5/003. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 03 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).