Thin film metrology

Patent metadata

Field	Value
Publication number	US-2022316861-A1
Application number	US-202217846910-A
Country	US
Kind code	A1
Filing date	Jun 22, 2022
Priority date	May 19, 2020
Publication date	Oct 6, 2022
Grant date	—

Abstract

A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

First claim

1 . A method for evaluating thickness of a film on a substrate, comprising:
exposing the film to non-visible electromagnetic radiation; detecting a capacitance response of the film to the exposing the film to the non-visible electromagnetic radiation; and using the capacitance response of the film from the detecting step to determine a thickness of the film.

2 . The method of claim 1 , wherein the exposing the film to non-visible electromagnetic radiation includes exposing the film to electromagnetic radiation in a near infrared portion of the electromagnetic spectrum.

3 . The method of claim 1 , wherein the detecting a capacitance response of the film includes determining a capacitance response of the film using scanning capacitance microscopy.

4 . The method of claim 3 , wherein the scanning capacitance microscopy is conducted in a non-contact mode.

5 . The method of claim 3 , wherein the scanning capacitance microscopy is conducted in a contact mode.

6 . The method of claim 5 , further comprising:
exposing a first underlying film, below the film, to the non-visible electromagnetic radiation; and detecting a capacitance response of the first underlying film to the exposing the first underlying film to the non-visible electromagnetic radiation; and using the capacitance response of the first underlying film from the detecting step for the first underlying film in combination with the capacitance response of the film from the detecting step for the film to determine a thickness of the film.

7 . The method of claim 6 , further comprising:
exposing a second underlying film, below the film and the first underlying film, to the non-visible electromagnetic radiation; and detecting a capacitance response of the second underlying film to the exposing an underlying film and first underlying film to the non-visible electromagnetic radiation; and using the capacitance response of the second underlying film from the detecting step for the underlying film in combination with the capacitance response of the film from the detecting step for the film to determine a thickness of the film.

8 . The method of claim 6 , wherein the capacitance response of the film occurs at a first wavelength of electromagnetic radiation and the capacitance response of the underlying film occurs at a second wavelength of electromagnetic radiation different from the first wavelength.

9 . The method of claim 1 , wherein the using the capacitance response of the film from the detecting step to determine a thickness of the film includes identifying a thickness correlated with a capacitance response in a look up table of capacitance force responses and film thicknesses for a material making up the film.

10 . A method for determining thickness of a film on a substrate, comprising:
exposing the film to infrared electromagnetic radiation; while exposing the film to the infrared electromagnetic radiation, performing a capacitance measurement on the film using scanning capacitance microscopy; determining a thickness of the film using the results of the capacitance measurement on the film.

11 . The method of claim 10 , wherein the capacitance measurement using scanning capacitance microscopy utilizes changes in electrostatic capacitance between a surface of the film and a capacitance probe used in the scanning capacitance microscopy.

12 . The method of claim 10 , wherein the film is the uppermost film.

13 . The method of claim 10 , wherein the capacitance measurement is carried out in a contact mode, wherein a probe of a scanning capacitance microscopy equipment contacts a surface of the film.

14 . The method of claim 10 , wherein the infrared electromagnetic radiation is near infrared electromagnetic radiation.

15 . The method of claim 10 , where the capacitance measurement is carried out in a non-contact mode, wherein a probe of a scanning capacitance microscopy equipment does not contact the surface of the film.

16 . A method for evaluating thickness of a film on a substrate, comprising:
exposing a plurality of films on the substrate to electromagnetic radiation in the infrared portion of the electromagnetic spectrum; while exposing the plurality of films to the electromagnetic radiation in the infrared portion of the electromagnetic spectrum, performing a scanning capacitance microscopy measurement on the plurality of films using a scanning capacitance probe microscope operating in a non-contact mode; detecting a scanning capacitance probe microscopy response of the plurality of films at a first wavelength of the electromagnetic radiation in the infrared portion of the electromagnetic spectrum; detecting a scanning capacitance probe microscopy response of the plurality of films at a second wavelength of the electromagnetic radiation in the infrared portion of the electromagnetic spectrum; using the detected scanning capacitance probe microscopy response at the first wavelength and the detected scanning capacitance probe microscopy response at the second wavelength to evaluate a thickness of one of the plurality of films.

17 . The method of claim 16 , wherein the using the detected scanning capacitance probe microscopy response at the first wavelength and the detected scanning capacitance probe microscopy response at the second wavelength to determine a thickness of one of the plurality of films includes identifying a thickness correlated with a combination of the scanning capacitance probe microscopy response at the first wavelength and a scanning capacitance probe microscopy response at the second wavelength in a look up table of scanning capacitance probe microscopy responses at the first wavelength and scanning capacitance probe microscopy responses at the second wavelength for a material making up the one of the plurality of films.

18 . The method of claim 16 , wherein the plurality of films have a combined thickness of less than 40 nanometers.

19 . The method of claim 16 , wherein the one of the plurality of films is the uppermost film.

20 . The method of claim 16 , wherein the one of the plurality of films is not an uppermost film.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Chih Hung
• Chen Kei-Wei
• Kung Te-Ming

Classifications

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• G01Q60/32 Primary

  AC mode · CPC title

• G01B11/0616 Primary

  of coating · CPC title

• G01Q60/24

  AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes · CPC title