Method and device for using a semiconductor component

Patent metadata

Field	Value
Publication number	US-2022216298-A1
Application number	US-202117564645-A
Country	US
Kind code	A1
Filing date	Dec 29, 2021
Priority date	Jan 4, 2021
Publication date	Jul 7, 2022
Grant date	—

Abstract

Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.

First claim

1 - 13 . (canceled)

14 . A method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer, the method comprising the following steps:
operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode; determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity; (i) continuing the operation of the semiconductor component using the first voltage when the condition is not met, and (ii) when the condition is met, ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.

15 . The method as recited in claim 14 , further comprising:
determining whether or not a condition is met for switching over from operating the semiconductor component using the second voltage to operating the semiconductor component using the first voltage; (i) continuing the operation of the semiconductor component using the second voltage if the condition is not met for switching over from operating the semiconductor component using the second voltage to operating the semiconductor component using the first voltage, and (ii) when the condition is met for switching over from operating the semiconductor component using the second voltage to operating the semiconductor component using the first voltage, ending the operation of the semiconductor component using the second voltage, and operating the semiconductor component using the first voltage between the first electrode and the second electrode.

16 . The method as recited in claim 15 , wherein a duration of the operation of the semiconductor component using the second voltage is determined, the condition for switching over from operating the semiconductor component using the second voltage to operating the semiconductor component using the first voltage being met when the duration exceeds a limiting value, which is defined by a time period in which the second voltage causes a movement of defects of the first defect type in a predefined position in the dielectric layer in a direction toward the second electrode.

17 . The method as recited in claim 15 , wherein a leakage current when operating the semiconductor component using the second voltage is determined, the condition for switching over from operating the semiconductor component using the second voltage to operating the semiconductor component using the first voltage being met when the leakage current exceeds or falls below a threshold.

18 . The method as recited in claim 14 , wherein a duration of the operation of the semiconductor component using the first voltage is determined, the condition for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using the second voltage being met when the duration exceeds a limiting value.

19 . The method as recited in claim 14 , wherein a leakage current which flows in operation of the semiconductor component using the first voltage is determined, the condition for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using the second voltage being met when the leakage current exceeds a threshold.

20 . The method as recited in claim 14 , wherein the semiconductor component is heated when operating the semiconductor component using the second voltage.

21 . The method as recited in claim 20 , wherein the semiconductor component is heated when operating the semiconductor component using the second voltage to a temperature which is higher than a temperature of the semiconductor component when operating the semiconductor component using the first voltage.

22 . The method as recited in claim 20 , wherein the semiconductor component is heated when operating the semiconductor component using the second voltage to a temperature in a range of 100° C. to 250° C.

23 . The method as recited in claim 20 , wherein the semiconductor component is heated when operating the semiconductor component using the second voltage to a temperature in a range of 150° C. or 200° C.

24 . The method as recited in claim 14 , wherein the semiconductor component, in operation using the first voltage, drives an actuator, the actuator not being driven by the semiconductor component in operation using the second voltage.

25 . The method as recited in claim 24 , wherein the actuator is of a MEMS or a micromirror or a print head or a loudspeaker.

26 . The method as recited in claim 14 , wherein the semiconductor component is operated using a second voltage higher than the first voltage.

27 . A device, comprising:
a semiconductor component which includes a dielectric layer between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer; and a regulating and/or control unit configured to:
operate the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode;
determine whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity;
(i) continue the operation of the semiconductor component using the first voltage when the condition is not met, and (ii) when the condition is met, end the operation of the semiconductor component using the first voltage, and operate the semiconductor component using the second voltage between the first electrode and the second electrode.

28 . The device as recited in claim 27 , wherein the dielectric layer includes defects of at least one further defect type, which are able to move, upon application of the first voltage, in a direction toward the second electrode.

Assignees

• Bosch Gmbh Robert

Inventors

• Monteiro Diniz Reis Daniel
• Schatz Frank
• Mews Mathias
• Schary Timo

Classifications

• G01R31/129

  of components or parts made of semiconducting materials; of LV components or parts (G01R31/18 takes precedence) · CPC title

• G01R31/27 Primary

  Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements {(testing printed circuit boards G01R31/2801)} · CPC title

• H10D1/682 Primary

  having dielectrics comprising perovskite structures · CPC title

• H10D1/696 Primary

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title

• H01L28/55

  Electricity · mapped topic