Film formation method and film formation device

Patent metadata

Field	Value
Publication number	US-2022178031-A1
Application number	US-202017594371-A
Country	US
Kind code	A1
Filing date	Apr 6, 2020
Priority date	Apr 16, 2019
Publication date	Jun 9, 2022
Grant date	—

Abstract

A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

First claim

1 . A film formation method comprising:
adsorbing a precursor of a raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

2 . The film formation method of claim 1 , wherein the raw material gas is a gas having a SiN bond,
the first wavelength is a wavelength in a range of 200 to 250 nm, and the reaction gas is an oxidizing gas that oxidizes the precursor.

3 . The film formation method of claim 2 , wherein the raw material gas is an aminosilane gas, and
the reaction gas is an oxygen gas.

4 . The film formation method of claim 1 , wherein, in the forming the layer, the reaction gas is supplied into the processing container while irradiating the interior of the processing container with ultraviolet light having a second wavelength that promotes the reaction between the precursor and the reaction gas.

5 . The film formation method of claim 4 , wherein the second wavelength is a wavelength in a range of 160 to 200 nm.

6 . The film formation method of 5 claim 1 , further comprising:
purging gas in the interior of the processing container between the adsorbing the precurs or and the forming the layer, and after the forming the layer, wherein, in the purging the gas, the interior of the processing container is irradiated with ultraviolet light having a third wavelength.

7 . A film formation apparatus comprising:
a processing container in which a substrate on which a film is to be formed is disposed; a gas supplier configured to supply a raw material gas for film formation and a reaction gas to an interior of the processing container; an irradiator configured to irradiate the interior of the processing container with ultraviolet light; and a controller configured to perform control to cause a precursor of the raw material gas to be adsorbed onto a surface of the substrate by irradiating the interior of the processing container with ultraviolet light having a first wavelength that separates a predetermined bond of the raw material gas from the irradiator while supplying the raw material gas from the gas supplier, and then cause a reaction gas to be supplied from the gas supplier so that the precursor and the reaction gas react with each other on the surface of the substrate and a layer is formed on the surface of the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Aita Michitaka
• Itabashi Ken
• Ifuku Ryota
• Kato Takaaki
• Yamada Kazuki

Classifications

• H10P14/60

  of insulating materials · CPC title

• C23C16/401 Primary

  containing silicon · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C16/45565

  Shower nozzles · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title