Substrate processing apparatus
US-2024021419-A1 · Jan 18, 2024 · US
US9157151B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9157151-B2 |
| Application number | US-75635807-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 31, 2007 |
| Priority date | Jun 5, 2006 |
| Publication date | Oct 13, 2015 |
| Grant date | Oct 13, 2015 |
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The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.
Opening claim text (preview).
The invention claimed is: 1. A method for preparing a chamber after the chamber being idle for a period of time, comprising: prior to introducing a substrate into the chamber, seasoning a liquid flow meter by flowing a liquid precursor through the liquid flow meter with radio frequency power turned off for a given period of time; cleaning the chamber using a first active species; seasoning the chamber by delivering a first gas mixture while applying radio frequency power to th…
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