Apparatus for processing substrate

Patent metadata

Field	Value
Publication number	US-2022093445-A1
Application number	US-202017423687-A
Country	US
Kind code	A1
Filing date	Jan 20, 2020
Priority date	Jan 18, 2019
Publication date	Mar 24, 2022
Grant date	—

Abstract

In accordance with an exemplary embodiment of the present invention, provided is an apparatus for processing substrate, the apparatus comprising: a chamber providing a process space formed therein; a susceptor on which a substrate is placed, the susceptor being installed in the process space; a gas supply port formed in the central portion of the ceiling of the chamber to supply a source gas to the process space; an exhaust port formed on a side wall of the chamber to be positioned outside and below the susceptor, the exhaust port exhausting a gas in the process space in the direction from a center of the susceptor toward an edge of the susceptor; and an antenna positioned above the susceptor and installed outside the chamber to generate plasma from the source gas, an upper surface of the susceptor comprises a seating surface on which the substrate is placed during the process and a control surface which is located on the periphery of the seating surface and faces the process space to be exposed to the plasma during process, the control surface being positioned lower than the seating surface.

First claim

1 . An apparatus for processing substrate, the apparatus comprising:
a chamber providing a process space formed therein; a susceptor on which a substrate is placed, the susceptor being installed in the process space; a gas supply port formed in the central portion of the ceiling of the chamber to supply a source gas to the process space; an exhaust port formed on a side wall of the chamber to be positioned outside and below the susceptor, the exhaust port exhausting a gas in the process space in the direction from a center of the susceptor toward an edge of the susceptor; and an antenna positioned above the susceptor and installed outside the chamber to generate plasma from the source gas, an upper surface of the susceptor comprises a seating surface on which the substrate is placed during the process and a control surface which is located on the periphery of the seating surface and faces the process space to be exposed to the plasma during process, the control surface being positioned lower than the seating surface.

2 . The apparatus of claim 1 , wherein the seating surface has a shape corresponding to the substrate, and the control surface is ring-shaped.

3 . The apparatus of claim 2 , wherein the width of the control surface is 20 to 30 mm.

4 . The apparatus of claim 2 , wherein the height difference between the seating surface and the control surface is 4.35 to 6.35 mm.

5 . The apparatus of claim 4 , wherein the distance between the lower end of the antenna and the seating surface is 93 to 113 mm.

6 . The apparatus of claim 1 , wherein the antenna is installed in a spiral shape along the vertical direction around the outer periphery of the chamber.

7 . The apparatus of claim 1 , wherein the chamber comprises:
a lower chamber in which the susceptor is installed, an upper portion of the lower chamber is opened and a passage through which the substrate enters and exits is formed on a side wall of the lower chamber; and an upper chamber connected to the upper portion of the lower chamber, the antenna being installed on the outer periphery of the upper chamber, wherein an inner diameter of the upper chamber corresponds to an outer diameter of the susceptor, and a cross-sectional area of the upper chamber is smaller than a cross-sectional area of the lower chamber.

8 . The apparatus of claim 1 , wherein the apparatus further comprises:
one or more exhaust plates installed in the process space and positioned around the susceptor so as to be lower than the upper surface of the susceptor, the exhaust plates being positioned parallel to the upper surface of the susceptor and having a plurality of exhaust holes.

9 . The apparatus of claim 1 , wherein the susceptor comprises:
a heater that is heated using electric power supplied; an upper cover covering an upper portion of the heater and having the seating surface and the control surface; and and a side cover connected to the upper cover and covering a side of the heater.

10 . The apparatus of claim 3 , wherein the height difference between the seating surface and the control surface is 4.35 to 6.35 mm.

Assignees

• Eugene Technology Co Ltd

Inventors

• Hwang Ryong
• Sung Se Jong
• Jang Woong Joo
• Shin Yang Sik
• Jung Woo Duck

Classifications

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P72/7611 Primary

  characterised by edge profile or support profile · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P14/6526 Primary

  introduced into an oxide material, e.g. changing SiO to SiON · CPC title