Aluminum/ceramic bonding substrate and method for producing same

Patent metadata

Field	Value
Publication number	US-2022033317-A1
Application number	US-202117383541-A
Country	US
Kind code	A1
Filing date	Jul 23, 2021
Priority date	Jul 29, 2020
Publication date	Feb 3, 2022
Grant date	—

Abstract

There is provided an aluminum/ceramic bonding substrate having a ceramic substrate, an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate, an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate, and a plate-shaped reinforcing member which has a higher strength than that of the aluminum base plate and which is arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

First claim

What is claimed is:

1 . An aluminum/ceramic bonding substrate comprising:
a ceramic substrate; an aluminum plate of an aluminum alloy which is bonded directly to one side of the ceramic substrate; an aluminum base plate of the aluminum alloy which is bonded directly to the other side of the ceramic substrate; and a plate-shaped reinforcing member having a higher strength than that of the aluminum base plate, the reinforcing member being arranged in the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

2 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum alloy contains 0.01 to 0.1% by weight of titanium.

3 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum plate has a surface having an average crystalline particle diameter of not greater than 7 mm.

4 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum plate has a Vickers hardness HV of not higher than 23.

5 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum plate has a Vickers hardness HV of not higher than 25 after a heat cycle, in which the aluminum/ceramic bonding substrate is sequentially held at a temperature of −40° C. for 30 minutes, at a temperature of 25° C. for 10 minutes, at a temperature of 150° C. for 30 minutes and at a temperature of 25° C. for 10 minutes, is repeated one thousand times.

6 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum base plate has a thermal conductivity of not less than 180 W/m·K.

7 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said reinforcing member extends in directions parallel to a bonded surface of said aluminum base plate to said ceramic substrate.

8 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said reinforcing member is made of a metal or ceramic, which has a higher melting point than that of said aluminum alloy.

9 . An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said ceramic substrate is made of at least one selected from the group consisting of alumina, aluminum nitride, silicon nitride and silicon carbide.

10 . A method for producing an aluminum/ceramic bonding substrate, the method comprising the steps of:
arranging a ceramic substrate and a reinforcing member in a mold so that the ceramic substrate is apart from the reinforcing member; injecting a molten metal of an aluminum alloy so that the molten metal contacts both sides of the ceramic substrate and the surface of the reinforcing member in the mold; cooling the mold to solidify the molten metal to form an aluminum plate of the aluminum alloy on one side of the ceramic substrate to allow the aluminum plate to be bonded directly to the one side of the ceramic substrate while forming an aluminum base plate of the aluminum alloy on the other side of the ceramic substrate to allow the aluminum base plate to be bonded directly to the other side of the ceramic substrate and while arranging the reinforcing member so as to be surrounded by the aluminum base plate to be bonded directly to the aluminum base plate, wherein the aluminum alloy contains 0.01 to 0.2% by weight of magnesium, 0.01 to 0.1% by weight of silicon, and the balance being aluminum and unavoidable impurities.

11 . A method for producing an aluminum/ceramic bonding substrate as set forth in claim 10 , wherein said aluminum alloy contains 0.01 to 0.1% by weight of titanium.

12 . A method for producing an aluminum/ceramic bonding substrate as set forth in claim 10 , wherein said reinforcing member is made of a metal or ceramic, which has a higher melting point than that of said aluminum alloy.

13 . A method for producing an aluminum/ceramic bonding substrate as set forth in claim 10 , wherein said ceramic substrate is made of at least one selected from the group consisting of alumina, aluminum nitride, silicon nitride and silicon carbide.

Assignees

• Dowa Metaltech Co Ltd
• Mitsubishi Electric Corp

Inventors

• Kobayashi Koji
• Tsubota Takuma
• Osanai Hideyo
• Oya Daisuke

Classifications

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W70/692 Primary

  Ceramics or glasses · CPC title

• B32B15/04

  comprising metal as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a bituminous or tarry layer B32B11/08; next to a water-setting substance layer B32B13/06; next to a glass layer B32B17/061; next to a cellulosic plastic layer B32B23/042)} · CPC title

• C22C21/00

  Alloys based on aluminium · CPC title

• C22C21/08 Primary

  with silicon · CPC title