Dielectric Film Forming Compositions

Patent metadata

Field	Value
Publication number	US-2022017673-A1
Application number	US-202117373827-A
Country	US
Kind code	A1
Filing date	Jul 13, 2021
Priority date	Jul 15, 2020
Publication date	Jan 20, 2022
Grant date	—

Abstract

This disclosure relates to a dielectric film forming composition that includes a plurality of (meth)acrylate containing compounds, at least one fully imidized polyimide polymer, and at least one solvent.

First claim

1 . A dielectric film forming composition, comprising:
a plurality of (meth)acrylate containing compounds, wherein the plurality of (meth)acrylate containing compounds comprise:
at least one mono(meth)acrylate containing compound of structure (I),

wherein R 1 is a hydrogen atom, a C 1 -C 3 alkyl group, a fully or partially halogen substituted C 1 -C 3 alkyl group, or a halogen atom; R 2 is a C 2 -C 10 alkylene group, a C 5 -C 20 cycloalkylene group, or a R 4 O group, wherein R 4 is a linear or branched C 2 -C 10 alkylene group or a C 5 -C 20 cycloalkylene group; R 3 is a substituted or unsubstituted linear, branched or cyclic C 1 -C 10 alkyl group, a saturated or unsaturated C 5 -C 25 alicyclic group, a C 6 -C 18 aryl group, or a C 7 -C 18 alkylaryl group; and n is 0 or 1;
at least one di(meth)acrylate containing cross linker; and
optionally at least one multi(meth)acrylate containing cross linker comprising at least 3 (meth)acrylate groups;
at least one fully imidized polyimide polymer; and
optionally, at least one solvent.

2 . The composition of claim 1 , wherein the at least one mono(meth)acrylate containing compound is selected from the group consisting of isobornyl acrylate, isobornyl methacrylate, dicyclopentenyloxyethyl acrylate, dicyclopentenyl acrylate, dicyclopentenyloxyethyl methacrylate, dicyclopentenyl methacrylate, bicyclo[2.2.2]oct-5-en-2-yl acrylate, bicyclo[2.2.2]oct-5-en-2-yl methacrylate, 2-[(bicyclo[2.2.2]oct-5-en-2-yl)oxy]ethyl acrylate, 2-[(bicyclo[2.2.2]oct-5-en-2-yl)oxy]ethyl methacrylate, 3a,4,5,6,7,7a-hexahydro-1H-4,7-ethanoinden-6-yl acrylate, 3a,4,5,6,7,7a-hexahydro-1H-4,7-ethanoinden-6-yl methacrylate, 2-[(3a,4,5,6,7,7a-hexahydro-1H-4,7-ethanoinden-6-yl)oxy]ethyl acrylate, 2-[(3a,4,5,6,7,7a-hexahydro-1H-4,7-ethanoinden-6-yl)oxy]ethyl methacrylate, tricyclo[5,2,1,0 2,6 ]decyl acrylate, tricyclo[5,2,1,0 2,6 ]decyl methacrylate, tetracyclo[4,4,0,1 2,5 ,1 7,10 ]dodecanyl acrylate, and tetracyclo[4,4,0,1 2,5 ,1 7,10 ]dodecanyl methacrylate.

3 . The composition of claim 1 , wherein the at least one mono(meth)acrylate containing compound is

4 . The composition of claim 1 , wherein the at least one mono(meth)acrylate containing compound is in an amount of from about 1% to about 50% by weight of the plurality of (meth)acrylate containing compounds.

5 . The composition of claim 1 , wherein the at least one di(meth)acrylate containing cross linker is in an amount of from about 20% to about 85% by weight of the plurality of (meth)acrylate containing compounds.

6 . The composition of claim 1 , wherein the at least one multi(meth)acrylate containing cross linker is in an amount of from 0% to about 40% by weight of the plurality of (meth)acrylate containing compounds.

7 . The composition of claim 1 wherein the amount of at least one mono(meth)acrylate containing compound in the composition is from 0.1 to 10% of the total amount of the dielectric film forming composition.

8 . The composition of claim 1 , further comprising at least one photoinitiator.

9 . A patterned dielectric film produced by the composition of claim 1 .

10 . The patterned dielectric film of claim 9 , wherein the patterned dielectric film is produced by:
a) depositing the dielectric film forming composition of claim 1 on a substrate to form a dielectric film; b) patterning the dielectric film by a lithographic method or by a laser ablation method.

11 . A three dimensional object, comprising at least one patterned dielectric film of claim 9 and at least one substrate.

12 . The three dimensional object of claim 11 , wherein the substrate comprises an organic film, an epoxy molded compound (EMC), silicon, glass, copper, stainless steel, copper cladded laminate (CCL), aluminum, silicon oxide, silicon nitride, or a combination thereof.

13 . The three dimensional object of claim 11 , wherein the substrate comprises a metal pattern.

14 . A process for preparing the three dimensional object of claim 13 , comprising:
a) depositing the dielectric film forming composition on a substrate to form a dielectric film; b) exposing the dielectric film to radiation or heat or a combination of radiation or heat; c) patterning the dielectric film to form a patterned dielectric film having openings; d) optionally depositing a seed layer on the patterned dielectric film; and e) depositing a metal layer in at least one opening in the patterned dielectric film to form a metal pattern.

15 . The three dimensional object of claim 11 , wherein the patterned dielectric film comprises surrounding copper patterns.

16 . A process for forming the three dimensional object of claim 15 , comprising:
a) providing a substrate containing copper conducting metal wire structures that form a network of lines and interconnects on the substrate; b) depositing the dielectric film forming composition on the substrate to form a dielectric film; and c) exposing the dielectric film to radiation or heat or a combination of radiation and heat.

17 . A semiconductor device, comprising the three dimensional object of claim 11 .

18 . The semiconductor device of claim 17 , wherein the semiconductor device is an integrated circuit, a light emitting diode, a solar cell, or a transistor.

19 . A dry film structure prepared by the composition of claim 1 .

20 . A process for preparing a dry film structure, comprising:
(a) coating a carrier substrate with the composition of claim 1 to form a coated composition; (b) drying the coated composition to form a photosensitive polyimide layer; and (c) optionally applying a protective layer to the photosensitive polyimide layer to form a dry film structure.

21 . A process, comprising:
applying the dry film structure prepared by the process of claim 20 onto an electronic substrate to form a laminate, wherein the photosensitive polyimide layer in the laminate is between the electronic substrate and the carrier substrate.

22 . A process of generating a dielectric film on a substrate having a copper pattern, comprising:
depositing the composition of claim 1 onto a substrate having a copper pattern to form a dielectric film, wherein the difference in the highest and lowest points on a surface of the dielectric film is at most about 2 microns.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Malik Sanjay
• De Binod B
• Reinerth William A
• Dimov Ognian
• Dilocker Stephanie

Classifications

• H10W72/01336

  in solid form, e.g. by using a powder or by laminating a foil · CPC title

• H10W72/355

  of outermost layers of multilayered die-attach connectors, e.g. material of a coating · CPC title

• H10W72/354

  comprising polymers · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/325

  Die-attach connectors having a filler embedded in a matrix · CPC title