Substrate treating apparatus and substrate treating method

Patent metadata

Field	Value
Publication number	US-2022013372-A1
Application number	US-202117370469-A
Country	US
Kind code	A1
Filing date	Jul 8, 2021
Priority date	Jul 10, 2020
Publication date	Jan 13, 2022
Grant date	—

Abstract

The inventive concept provides an apparatus for treating a substrate by using a supercritical fluid. In an embodiment, the apparatus may include a process chamber that provides a treatment space, and including a chamber heater that increases a temperature of an interior of the treatment space, a substrate support provided in the treatment space and that supports the substrate, and a substrate heating member that heats a lower surface of the substrate while contacting the lower surface of the substrate.

First claim

1 . An apparatus for treating a substrate by using a supercritical fluid, the apparatus comprising:
a process chamber configured to provide a treatment space, and including a chamber heater configured to increase a temperature of an interior of the treatment space; a substrate support provided in the treatment space and configured to support the substrate; and a substrate heating member configured to heat a lower surface of the substrate while contacting the lower surface of the substrate.

2 . The apparatus of claim 1 , wherein a liquid film is formed on the substrate treated by using the supercritical fluid with a drying preventing liquid.

3 . The apparatus of claim 2 , wherein the substrate heating member heats the substrate to a temperature, at which the drying preventing liquid shows a Leidenfrost effect in a reaction with a surface of the substrate.

4 . The apparatus of claim 2 , wherein the substrate heating member heats the substrate to a transition boiling point of the drying preventing liquid or more.

5 . The apparatus of claim 2 , wherein the substrate heating member heats the substrate to 110° C. or more.

6 . The apparatus of claim 1 , wherein the chamber heater and the heating member are controlled independently.

7 . The apparatus of claim 1 , wherein the substrate heating member has an area corresponding to a whole surface of the substrate.

8 . The apparatus of claim 1 , wherein the process chamber is formed through combination of an upper chamber and a lower chamber coupled to the upper chamber according to upward/downward movement relative to the upper chamber and forming a sealed space through coupling with the upper chamber, and
wherein the substrate support is coupled to the upper chamber, and the substrate heating member is coupled to the lower chamber.

9 . The apparatus of claim 1 , further comprising:
a first supply port connected to a first supply line configured to supply a treatment liquid to a portion of the treatment space of the process chamber, which is located at a lower portion of the substrate, wherein the substrate heating member is disposed between the first supply port and the substrate support, and interrupts the supercritical fluid from the first supply port from being directly ejected to the substrate.

10 . The apparatus of claim 9 , wherein a substrate heater is embedded in an interior of the substrate heating member, and the substrate is heated with heat generated by the substrate heating member.

11 . The apparatus of claim 9 , wherein a substrate heater configured to heat the substrate heating member is provided in an interior of the lower chamber, and
wherein the substrate heating member receives heat generated by the substrate heater and heats the substrate.

12 . The apparatus of claim 9 , wherein the lower chamber is formed of a stainless steel material.

13 . The apparatus of claim 12 , wherein the lower chamber and the substrate heating member are connected to each other by a material having a set thermal conductivity or more.

14 . The apparatus of claim 1 , wherein the substrate heating member is formed of a stainless steel material.

15 . An apparatus for treating a substrate by using a supercritical fluid, the apparatus comprising:
a process chamber configured to provide a treatment space, and including a chamber heater configured to increase a temperature of an interior of the treatment space; a substrate support provided in the treatment space and configured to support the support; a lift pin configured to raise and lower the substrate from the substrate support such that the substrate support contacts the substrate or the substrate support and the substrate are spaced apart from each other, and a substrate heating member configured to heat the substrate that contacts the substrate support.

16 . The apparatus of claim 15 , wherein a liquid film is formed on the substrate treated by using the supercritical fluid with a drying preventing liquid, and
wherein the substrate heating member heats the substrate to a temperature, at which the drying preventing liquid shows a Leidenfrost effect in a reaction with a surface of the substrate.

17 . The apparatus of claim 15 , wherein the chamber heater and the heating member are controlled independently.

18 . The apparatus of claim 15 , wherein the substrate heating member is formed of a stainless steel material.

19 .- 20 . (canceled)

Assignees

• Semes Co Ltd

Inventors

• PARK Miso
• Lee Yong Hee
• Yoon Dohyeon

Classifications

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0406 Primary

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/0434

  mainly by convection · CPC title