Indium gallium nitride nanostructure systems and uses thereof
US-2021086170-A1 · Mar 25, 2021 · US
Method for Producing Nitride Semiconductor Photoelectrode
US2022002886A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022002886-A1 |
| Application number | US-201917292361-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 19, 2019 |
| Priority date | Dec 3, 2018 |
| Publication date | Jan 6, 2022 |
| Grant date | — |
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Abstract
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Provided is a method for producing a nitride semiconductor photoelectrode capable of improving the light energy conversion efficiency. The method for producing a nitride semiconductor photoelectrode includes a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate, a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer, a third step of forming a nickel layer n the indium gallium nitride layer, and a fourth step of heat-treating the nickel layer in an oxygen atmosphere.
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1 . A method for producing a nitride semiconductor photoelectrode comprising: a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate; a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer; a third step of forming a nickel layer on the indium gallium nitride layer; and a fourth step of heat-treating the nickel layer in an oxygen atmosphere. 2 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein metal organic chemical vapor deposition (MOCVD) is used in the first step and the second step. 3 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein electron beam (EB) vapor deposition is used in the third step. 4 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein the fourth step is performed at a temperature from 250 to 400° C. for a holding time from 30 minutes to 2 hours. 5 . The method for producing a nitride semiconductor photoelectrode according to claim 1 , wherein the nickel layer after the fourth step becomes an oxygen-excessive nickel oxide layer and exhibits characteristics as a p-type semiconductor. 6 . The method for producing a nitride semiconductor photoelectrode according to claim 2 , wherein electron beam (EB) vapor deposition is used in the third step. 7 . The method for producing a nitride semiconductor photoelectrode according to claim 2 , wherein the fourth step is performed at a temperature from 250 to 400° C. for a holding time from 30 minutes to 2 hours. 8 . The method for producing a nitride semiconductor photoelectrode according to claim 3 , wherein the fourth step is performed at a temperature from 250 to 400° C. for a holding time from 30 minutes to 2 hours. 9 . The method for producing a nitride semiconductor photoelectrode according to claim 2 , wherein the nickel layer after the fourth step becomes an oxygen-excessive nickel oxide layer and exhibits characteristics as a p-type semiconductor. 10 . The method for producing a nitride semiconductor photoelectrode according to claim 3 , wherein the nickel layer after the fourth step becomes an oxygen-excessive nickel oxide layer and exhibits characteristics as a p-type semiconductor. 11 . The method for producing a nitride semiconductor photoelectrode according to claim 4 , wherein the nickel layer after the fourth step becomes an oxygen-excessive nickel oxide layer and exhibits characteristics as a p-type semiconductor.
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deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title
Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title
using chemical vapour deposition [CVD] · CPC title
using transformation of metal, e.g. oxidation or nitridation · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
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- What does patent US2022002886A1 cover?
- Provided is a method for producing a nitride semiconductor photoelectrode capable of improving the light energy conversion efficiency. The method for producing a nitride semiconductor photoelectrode includes a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate, a second step of forming an indium gallium nitride layer on the n-type gallium nitride laye…
- Who is the assignee on this patent?
- Nippon Telegraph & Telephone
- What technology area does this patent fall under?
- Primary CPC classification C25B9/50. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jan 06 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).