Photosynthesis apparatus

Patent metadata

Field	Value
Publication number	US-10316417-B2
Application number	US-201615264959-A
Country	US
Kind code	B2
Filing date	Sep 14, 2016
Priority date	Apr 14, 2014
Publication date	Jun 11, 2019
Grant date	Jun 11, 2019

Abstract

A photosynthesis apparatus includes a groove part formed in a semiconductor substrate; a first conductive type area formed on one side surface of the groove part; a second conductive type area formed on another side surface of the groove part; an oxidation electrode formed in contact with the first conductive type area on the one side surface; a reduction electrode formed in contact with the second conductive type area on the other side surface; and a proton diaphragm formed at a center part of the groove part. Water including carbon dioxide is supplied to the groove part, and light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.

First claim

What is claimed is:

1. A photosynthesis apparatus, comprising:
a groove part formed in a semiconductor substrate;
a first conductive type area formed on one side surface of the groove part in the semiconductor substrate;
a second conductive type area formed on another side surface of the groove part in the semiconductor substrate;
an oxidation electrode formed in contact with the first conductive type area on the one side surface of the groove part;
a reduction electrode formed in contact with the second conductive type area on the other side surface of the groove part; and
a proton diaphragm formed at a center part of the groove part,
wherein a height of each of the oxidation electrode and the reduction electrode on the semiconductor substrate is the same as a depth of the groove part in the semiconductor substrate,
water including carbon dioxide is supplied to the groove part, and
light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.

2. The photosynthesis apparatus according to claim 1 , wherein the semiconductor substrate is a silicon substrate.

3. A photosynthesis apparatus comprising:
a semiconductor layer formed on a substrate;
a groove part formed in the semiconductor layer;
a first conductive type area formed on one side surface of the groove part;
a second conductive type area formed on another side surface of the groove part;
an oxidation electrode formed in contact with the first conductive type area on the one side surface of the groove part;
a reduction electrode formed in contact with the second conductive type area on the other side surface of the groove part; and
a proton diaphragm formed at a center part of the groove part,
wherein a height of each of the oxidation electrode and the reduction electrode on the semiconductor layer is the same as a depth of the groove part in the semiconductor layer,
water including carbon dioxide is supplied to the groove part, and
light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.

4. The photosynthesis apparatus according to claim 3 , wherein the first conductive type area and the second conductive type area are formed of a material including GaN.

5. The photosynthesis apparatus according to claim 4 , wherein
the first conductive type area is formed by depositing a plurality of semiconductor layers having different band gaps, and
the second conductive type area is formed by depositing a plurality of semiconductor layers having different band gaps.

6. The photosynthesis apparatus according to claim 1 , wherein
a first conductive type of the first conductive type area is an n-type, and
a second conductive type of the second conductive type area is a p-type.

7. A photosynthesis apparatus comprising:
a groove part formed in a semiconductor layer on a substrate;
a first semiconductor area formed on one side surface of the groove part;
a second semiconductor area formed on another side surface of the groove part;
a third semiconductor area formed in contact with the first semiconductor area and the second semiconductor area;
an oxidation electrode formed in contact with the first semiconductor area on the one side surface of the groove part;
a reduction electrode formed in contact with the second semiconductor area on the other side surface of the groove part; and
a proton diaphragm formed at a center part of the groove part, wherein
the third semiconductor area is formed of a semiconductor material having a wider band gap than a semiconductor material forming the first semiconductor area and the second semiconductor area,
two-dimensional electron gas is generated at an interface between the first semiconductor area and the third semiconductor area,
two-dimensional hole gas is generated at an interface between the second semiconductor area and the third semiconductor area,
water including carbon dioxide is supplied to the groove part, and
light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.

8. The photosynthesis apparatus according to claim 7 , wherein
the first semiconductor area is formed by depositing a plurality of semiconductor layers having different band gaps, and
the second semiconductor area is formed by depositing a plurality of semiconductor layers having different band gaps.

9. The photosynthesis apparatus according to claim 7 , wherein
the first semiconductor area and the second semiconductor area are formed of a material including GaN, and
the third semiconductor area is formed of a material including AlGaN.

10. The photosynthesis apparatus according to claim 7 , wherein
a through hole penetrating the substrate is formed between the groove part and a back side of the substrate, and
the water including the carbon dioxide is supplied to the groove part via the through hole from the back side of the substrate.

Assignees

• Fujitsu Ltd

Inventors

• Okamoto Naoya

Classifications

• Y02E60/368

  Cross-Sectional Technologies · mapped topic

• C25B9/04

  Chemistry & Metallurgy · mapped topic

• C25B3/04

  Chemistry & Metallurgy · mapped topic

• C25B1/003

  Chemistry & Metallurgy · mapped topic

• H01G9/205

  comprising a semiconductor electrode comprising AIII-BV compounds with or without impurities, e.g. doping materials · CPC title