Dielectric Film-Forming Composition

Patent metadata

Field	Value
Publication number	US-2022002463-A1
Application number	US-202117352484-A
Country	US
Kind code	A1
Filing date	Jun 21, 2021
Priority date	Jul 2, 2020
Publication date	Jan 6, 2022
Grant date	—

Abstract

This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.

First claim

1 . A dielectric film-forming composition, comprising:
a) at least one cyclized polydiene resin having a substituted or unsubstituted alkenyl group; b) at least one reactive functional compound having at least two functional groups capable of reacting with the substituted or unsubstituted alkenyl group on cyclized polydiene resin; and c) at least one catalyst capable of inducing reaction of the cyclized polydiene resin with the reactive functional compound.

2 . The composition of claim 1 , wherein the at least one cyclized polydiene resin comprises a cyclized polyisoprene, a cyclized polybutadiene, a cyclized polypentadiene, or a copolymer thereof.

3 . The composition of claim 1 , wherein the at least one cyclized polydiene resin has a weight average molecular weight (Mw) of from at least about 5,000 Daltons to at most about 500,000 Daltons.

4 . The composition of claim 1 , wherein the at least one cyclized polydiene resin is a mixture of:
a) a cyclized polydiene resin with a weight average molecular weight of from about 5,000 Daltons to about 20,000 Daltons; b) a cyclized polydiene resin with a weight average molecular weight of from about 25,000 Daltons to about 60,000 Daltons; and c) a cyclized polydiene resin with a weight average molecular weight of from about 70,000 Daltons to about 200,000 Daltons.

5 . The composition of claim 1 , wherein the at least one cyclized polydiene resin is in an amount of from about 2 wt % to about 40 wt % of the composition.

6 . The composition of claim 1 , wherein the dielectric film-forming composition is capable of forming a dielectric film having a Tg of at least about 120° C.

7 . The composition of claim 1 , wherein the at least one of the reactive functional compound comprises a compound containing at least two functional groups selected from the groups consisting of a (meth)acrylate group, an olefin group, a cycloolefin group, an alkynyl group, and a combination thereof.

8 . The composition of claim 1 , wherein the at least one reactive functional compound is in an amount of from about 1 wt % to about 25 wt % of the composition.

9 . The composition of claim 1 , wherein the at least one catalyst is in an amount of from about 0.2 wt % to about 3 wt % of the composition.

10 . A process of preparing a dielectric film, comprising:
a) coating the dielectric film-forming composition of claim 1 on a substrate to form a film; b) optionally baking the film at a temperature from about 50° C. to about 150° C. for about 20 seconds to about 240 seconds; and c) exposing the film to radiation, heat, or a combination thereof without a mask.

11 . A process for preparing a dry film, comprising:
a) coating a carrier substrate with a dielectric film-forming composition of claim 1 ; b) drying the coated dielectric film-forming composition to form a dry film; and c) optionally, applying a protective layer to the dry film.

12 . A dry film prepared by the process of claim 11 .

13 . A process for depositing a conducting metal layer, comprising:
a) depositing the composition of claim 1 on a substrate to form a dielectric film; b) exposing the dielectric film to radiation or heat or a combination of radiation and heat; c) patterning the dielectric film to form a patterned dielectric film having openings; d) optionally depositing a seed layer on the patterned dielectric film; e) depositing a conducting metal layer in at least one opening in the patterned dielectric film; and f) optionally repeating steps a) to e) at least one time.

14 . A process for forming a dielectric film on a substrate, comprising steps of:
a) providing a substrate containing conducting metal wire structures that form a network of lines and interconnects on the substrate; b) depositing the composition of claim 1 on the substrate to form a dielectric film; c) exposing the dielectric film to radiation or heat or a combination of radiation and heat; and d) optionally, repeating steps a) to c) at least one time.

15 . A three dimensional object formed by the process of claim 14 .

16 . The object of claim 15 , comprising the dielectric film in at least two stacks.

17 . A dielectric film-forming composition, comprising:
a) at least one cyclized polydiene resin; and b) at least one cyanate ester compound, the at least one cyanate ester compound comprising at least two cyanate groups.

18 . The composition of claim 17 , wherein the at least one cyanate ester compound has Structure (I):
A-(O—C≡N) m   (I),

wherein m is an integer of at least 2 and A is a divalent organic group comprising a substituted or unsubstituted aromatic group.

19 . The composition of claim 18 , wherein the at least one cyanate ester compound has Structure (II):

wherein R is a hydrogen atom, a C 1 -C 3 alkyl group, a fully or partially halogen substituted C 1 -C 3 alkyl group, or a halogen atom; and X is a single bond, —O—, —S—, —(C═O)—, —(C═O)—O—, —O—(C═O)—, —(S═O)—, —(SO 2 )—, —CH 2 CH 2 —O—, a substituted or unsubstituted C 1 -C 10 alkylene, a fully or partially fluoro substituted C 1 -C 4 alkylene, a substituted or unsubstituted C 3 -C 10 cycloalkylene, or one of the following groups:

20 . The composition of claim 17 , wherein the at least one cyanate ester compound has Structure (II):

wherein n 1 is an integer of at least 2, n 2 and n 3 are independently 0 or an integer from 1 to 100, R 1 is a C 1 -C 10 alkyl or C 1 -C 20 arylalkyl group, R 2 is a substituted or unsubstituted C 1 -C 10 alkyl, a substituted or unsubstituted C 3 -C 10 cycloalkyl, a substituted or unsubstituted aryl group, or a —(C═O)—OR 4 group, in which R 4 is a non-acid sensitive substituted alkyl or arylalkyl group; and R 3 is a substituted or unsubstituted C 1 -C 10 alkyl, or a fluoro substituted C 1 -C 4 alkyl.

21 . The composition of claim 17 , wherein the at least one cyanate ester compound is in an amount of from about 1 wt % to about 25 wt % of the composition.

22 . A dielectric film-forming composition, comprising:
a) at least one cyclized polydiene resin having a substituted or unsubstituted alkenyl group; b) at least one reactive functional compound having at least two functional groups capable of reacting with the substituted or unsubstituted alkenyl group on the cyclized polydiene resin; c) at least one cyanate ester compound, the at least one cyanate ester compound comprising at least two cyanate groups; d) at least one catalyst capable of inducing reaction of the cyclized polydiene resin with the reactive functional compound; and e) optionally, at least one solvent.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• De Binod B
• Reinerth William A
• Malik Sanjay
• Dilocker Stephanie
• Sakamuri Raj

Classifications

• H10W72/00

  Interconnections or connectors in packages · CPC title

• C09D4/06

  {Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond} in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00 · CPC title

• C25D3/38

  of copper · CPC title

• H05K1/0353

  consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title