Resistless Patterning Mask

Patent metadata

Field	Value
Publication number	US-2021375615-A1
Application number	US-202117228295-A
Country	US
Kind code	A1
Filing date	Apr 12, 2021
Priority date	Jun 2, 2020
Publication date	Dec 2, 2021
Grant date	—

Abstract

In a first aspect, the present disclosure relates to a method for forming a patterning mask over a layer to be patterned, the method comprising: (a) providing a first layer over a substrate, the substrate comprising the layer to be patterned, the first layer being capable to bond with a monolayer comprising a compound comprising a functional group for bonding to the first layer and a removable organic group, (b) bonding the monolayer to the first layer, (c) exposing the monolayer to an energy beam, thereby forming a pattern comprising a first area comprising the compound with the removable organic group and a second area comprising the compound not having the removable organic group, and (d) selectively depositing an amorphous carbon layer on top of the first area.

First claim

What is claimed is:

1 . A method for forming a patterning mask over a layer to be patterned, the method comprising:
providing a first layer over a substrate, the substrate comprising the layer to be patterned; bonding a functional group of a monolayer to the first layer, the monolayer further including a removable organic group; exposing the monolayer to an energy beam, thereby forming a pattern of a first area that includes the removable organic group and a second area that does not include the removable organic group; and selectively depositing an amorphous carbon layer on the first area.

2 . The method according to claim 1 , wherein the monolayer comprises an organotin.

3 . The method of claim 1 , wherein the substrate comprises a sensitizer layer as a top layer of the substrate.

4 . The method according to claim 3 , wherein a thickness of the sensitizer layer is at least 3 nm.

5 . The method of claim 3 , wherein a thickness of the sensitizer layer is 3 nm to 5 nm.

6 . The method according to claim 3 , wherein the sensitizer layer comprises one or more of tin, a binary compound comprising tin, tellurium, or a binary compound comprising tellurium.

7 . The method according to claim 1 , wherein a thickness of the first layer is less than 3 nm.

8 . The method of claim 1 , wherein a thickness of the first layer is 1 nm to 2 nm.

9 . The method according to claim 1 , wherein the substrate comprises an organic mask layer over the layer to be patterned.

10 . The method according to claim 1 , wherein the first layer comprises at least one metal oxide, selected from silicon oxide, tin oxide, zirconium oxide, and titanium oxide.

11 . The method according to claim 1 , comprising replicating the pattern into an intermediate layer present between the pattern and the layer to be patterned, by etching through the intermediate layer selectively with respect to the amorphous carbon layer.

12 . The method according to claim 1 , further comprising:
halogenating the amorphous carbon layer; selectively depositing an inorganic mask layer on top of the second area, thereby forming an inorganic pattern; and replicating the inorganic pattern into an intermediate layer between the inorganic pattern and the layer to be patterned, by etching through the intermediate layer selectively with respect to the inorganic pattern.

13 . The method according to claim 12 , wherein the inorganic mask layer comprises one or more of a metal, a metal oxide, or a metal nitride.

14 . A structure comprising:
a substrate comprising a layer to be patterned; a first layer over the substrate; a monolayer bonded to the first layer, the first layer comprising a pattern comprising a first area and a second area, the first area comprising an organic group and the second area not comprising the organic group; and an amorphous carbon layer on the first area.

15 . The structure according to claim 14 , wherein the substrate comprises an organic mask layer over the layer to be patterned.

16 . The structure according to claim 14 , wherein the amorphous carbon layer comprises a halogen, and wherein there is an inorganic mask layer on the second area.

17 . The structure according to claim 14 , wherein the substrate comprises a sensitizer layer that is a top layer of the substrate, and wherein a thickness of the first layer is smaller than 3 nm.

18 . The structure according to claim 14 , wherein the substrate comprises a sensitizer layer that is a top layer of the substrate, and wherein a thickness of the first layer is 1 nm to 2 nm.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Krishtab Mikhail
• Armini Silvia

Classifications

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/0042

  with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

• G03F7/165

  Monolayers, e.g. Langmuir-Blodgett · CPC title

• G03F7/265

  Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation · CPC title