Porous platinum nanorod electrode array flexible sensor devices and fabrication

Patent metadata

Field	Value
Publication number	US-2021371987-A1
Application number	US-201917291236-A
Country	US
Kind code	A1
Filing date	Nov 7, 2019
Priority date	Nov 8, 2018
Publication date	Dec 2, 2021
Grant date	—

Abstract

A method for fabricating a Pt nanorod electrode array sensor device includes forming planar metal electrodes on a flexible film, co-depositing Pt alloy on the planar metal electrodes via physical vapor deposition, and dealloying the Pt alloy to etch Pt nanorods from the deposited Pt alloy. A Pt nanorod electrode sensor device includes a plurality of porous Pt nanorods on a planar metal electrode forming a sensor electrode. The planar metal electrode is on a flexible substrate. An electrode lead on the flexible substrate extends away from the planar metal electrode. Insulation is around porous Pt nanorods an upon the electrode lead.

First claim

1 . A method for fabricating a Pt nanorod electrode array sensor device, comprising:
forming planar metal electrodes on a flexible film; co-depositing Pt alloy on the planar metal electrodes via physical vapor deposition; dealloying the Pt alloy to etch Pt nanorods from the deposited Pt alloy.

2 . The method of claim 1 , wherein the Pt alloy comprises PtAg.

3 . The method of claim 2 , wherein the planar metal electrodes comprise Pt.

4 . The method of claim 2 , wherein the planar metal electrodes comprise Ag.

5 . The method of claim 1 , wherein the Pt alloy comprises Pt with another metal that can be selectively etched after deposition of the bimetal alloy.

6 . The method of claim 1 , comprising:
coating a carrier substrate with an anti-adhesion layer; depositing the flexible film on the anti-adhesion layer; patterning the flexible film for the planar metal electrodes and electrode leads; depositing the planar metal electrodes and electrode leads; depositing an adhesion layer on the planar metal electrodes; conducting the co-depositing of the Pt alloy; and conducting the dealloying the Pt alloy.

7 . The method of claim 6 , wherein the de-alloying comprises an immersion in acid that selectively etches an alloyed metal with Pt in the deposited Pt alloy.

8 . The method of claim 6 , further comprising:
passivating electrode and electrode lead areas with a passivation layer; depositing an anti-adhesion layer on the passivation layer; depositing a sacrificial layer on the anti-adhesion layer; selectively etching the passivation layer over electrode sites to expose the electrode sites with Pt nanorods; peeling the sacrificial layer; peeling the flexible film from the carrier substrate.

9 . A Pt nanorod electrode sensor device, comprising a plurality of porous Pt nanorods on a planar metal electrode forming a sensor electrode, the planar metal electrode being on a flexible substrate, an electrode lead on the flexible substrate and extending away from the planar metal electrode and insulation around porous Pt nanorods an upon the electrode lead.

10 . The Pt nanorod electrode sensor device of claim 9 , wherein the sensor electrode has a charge injection capacity (CIC) of ˜4.4 mC/cm 2 .

11 . The Pt nanorod electrode sensor device of claim 9 , wherein the Pt nanorods are crystalline Pt.

12 . The Pt nanorod electrode sensor device of claim 9 , wherein the Pt nanorods have a height in the range of 300-400 nm.

13 . The Pt nanorod electrode sensor device of claim 9 , wherein the Pt nanorods have a height in the range of a few tens of nanometers to a few micrometers.

14 . The Pt nanorod electrode device of claim 9 , wherein the flexible substrate comprises parylene C.

15 . The Pt nanorod electrode device of any of claim 9 , wherein the flexible substrate has a thickness of ˜2-20 μm.

16 . The Pt nanorod electrode device of any of claim 9 , wherein the sensor electrode has charge storage capacity of ˜51.6 mC/cm 2 .

Assignees

• Univ California

Inventors

• Dayeh Shadi A
• Ganji Mehran

Classifications

• C22C5/04 Primary

  Alloys based on a platinum group metal · CPC title

• C23C14/16

  on metallic substrates or on substrates of boron or silicon · CPC title

• C23F1/02 Primary

  Local etching · CPC title

• G06F3/015

  Input arrangements based on nervous system activity detection, e.g. brain waves [EEG] detection, electromyograms [EMG] detection, electrodermal response detection · CPC title

• C23C14/5873

  Removal of material · CPC title