Apparatus for depositing thin films using hydrogen peroxide

US2021363633A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2021363633-A1
Application numberUS-202117324191-A
CountryUS
Kind codeA1
Filing dateMay 19, 2021
Priority dateMay 22, 2020
Publication dateNov 25, 2021
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A thin film deposition system is disclosed in order to form a thin film on a substrate. The thin film deposition system comprises a hydrogen peroxide source. The hydrogen peroxide source comprises an electrochemical cell that converts a hydrogen gas to a hydrogen ion gas. The electrochemical cell converts an oxygen gas and water into a liquid phase complex. The liquid phase complex reacts with the hydrogen ion gas to form hydrogen peroxide.

First claim

Opening claim text (preview).

What is claimed is: 1 . A reaction system configured to form a thin film on a substrate, comprising: a reaction chamber configured to hold a substrate to be processed; a first precursor source, the first precursor source configured to provide a first precursor gas to the substrate; an inert gas source, the inert gas source configured to provide an inert gas to the substrate; and a hydrogen peroxide source configured to provide on demand a liquid hydrogen peroxide solution, wherein the hydrogen peroxide source comprises: an electrochemical cell comprising: a porous electrolyte, a first gas diffusion layer, a second gas diffusion layer, a catalyst layer, an activated carbon layer, a first membrane layer, and a second membrane layer; a hydrogen source, the hydrogen source configured to provide a hydrogen gas, wherein the hydrogen gas passes through the first gas diffusion layer, the catalyst layer, and the first membrane layer into the porous electrolyte; an oxygen source, the oxygen source configured to provide an oxygen gas, wherein the oxygen gas passes through the second gas diffusion layer, the activated carbon layer, and the second membrane layer into the porous electrolyte; and a water source, the water source configured to provide water to the porous electrolyte; wherein the catalyst layer converts the hydrogen gas into a hydrogen ion (H + ) gas; and wherein the activated carbon layer converts the oxygen gas into an ion that reacts with the water in the porous electrolyte to form a liquid phase (HO 2 − ) complex. 2 . The reaction system of claim 1 , wherein the porous electrolyte comprises at least one of: a styrene-divinylbenzene sulphonated co-polymer, a Dowex resin, a yttrium-stabilized zirconia, an inorganic solid, or a mixed cesium oxide-tungsten phosphate. 3 . The reaction system of claim 1 , wherein the catalyst layer comprises at least one of: iridium oxide, or a platinum-supported carbon. 4 . A reaction system configured to form a thin film on a substrate, comprising: a reaction chamber configured to hold a substrate to be processed; a first precursor source, the first precursor source configured to provide a first precursor gas to the substrate; an inert gas source, the inert gas source configured to provide an inert gas to the substrate; and a hydrogen peroxide source configured to provide on demand a liquid hydrogen peroxide solution, wherein the hydrogen peroxide source comprises: an electrochemical cell comprising: a porous electrolyte, a first gas diffusion layer, a second gas diffusion layer, a catalyst layer, an activated carbon layer, a first membrane layer, and a second membrane layer; a hydrogen source, the hydrogen source configured to provide a hydrogen gas, wherein the hydrogen gas passes through the first gas diffusion layer, the catalyst layer, and the first membrane layer into the porous electrolyte; an oxygen source, the oxygen source configured to provide an oxygen gas, wherein the oxygen gas passes through the second gas diffusion layer, the activated carbon layer, and the second membrane layer into the porous electrolyte; and a nitrogen source, the nitrogen source configured to provide a nitrogen (N 2 ) gas to the porous electrolyte; wherein the catalyst layer converts the hydrogen gas into a hydrogen ion (H + ) gas; and wherein the activated carbon layer converts the oxygen gas into an ion that forms a liquid phase (HO 2 − ) complex. 5 . The reaction system of claim 3 , wherein the porous electrolyte comprises at least one of: a styrene-divinylbenzene sulphonated co-polymer, a Dowex resin, a yttrium-stabilized zirconia, an inorganic solid, or a mixed cesium oxide-tungsten phosphate. 6 . The reaction system of claim 3 , wherein the catalyst layer comprises at least one of: iridium oxide, or a platinum-supported carbon. 7 . The reaction system of claim 3 , wherein the nitrogen source further provides a water vapor with the nitrogen gas. 8 . The reaction system of claim 3 , wherein the nitrogen source further provides a non-aqueous liquid with the nitrogen gas. 9 . The reaction system of claim 8 , wherein the non-aqueous liquid comprises at least one of: dimethyl sulfoxide (DMSO) or an ionic liquid.

Assignees

Inventors

Classifications

  • Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features · CPC title

  • Peroxides · CPC title

  • characterized by the apparatus · CPC title

  • Shower nozzles · CPC title

  • Oxides · CPC title

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What does patent US2021363633A1 cover?
A thin film deposition system is disclosed in order to form a thin film on a substrate. The thin film deposition system comprises a hydrogen peroxide source. The hydrogen peroxide source comprises an electrochemical cell that converts a hydrogen gas to a hydrogen ion gas. The electrochemical cell converts an oxygen gas and water into a liquid phase complex. The liquid phase complex reacts with …
Who is the assignee on this patent?
Asm Ip Holding Bv
What technology area does this patent fall under?
Primary CPC classification C23C16/45544. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Nov 25 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).