Coated cutting tool
US-2024287680-A1 · Aug 29, 2024 · US
Raw material for forming thin film by atomic layer deposition method and method for producing thin film
US2021155638A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021155638-A1 |
| Application number | US-201917048360-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 8, 2019 |
| Priority date | Apr 20, 2018 |
| Publication date | May 27, 2021 |
| Grant date | — |
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- Title
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Abstract
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where R1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.
First claim
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1 . A thin-film forming raw material, which is used in an atomic layer deposition method, comprising a magnesium compound represented by the following general formula (1): where R 1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. 2 . A method of producing a thin-film containing a magnesium atom on a surface of a substrate, the method comprising the steps of: vaporizing the thin-film forming raw material of claim 1 , which is used in an atomic layer deposition method and depositing the thin-film forming raw material, which is used in an atomic layer deposition method on the surface of the substrate, to thereby form a precursor thin-film; and subjecting the precursor thin-film to a reaction with a reactive gas, to thereby form the thin-film containing a magnesium atom on the surface of the substrate. 3 . The method of producing a thin-film according to claim 2 , wherein the reactive gas is an oxidizing gas, and wherein the thin-film is magnesium oxide. 4 . The method of producing a thin-film according to claim 3 , wherein the oxidizing gas is a gas containing ozone or water vapor. 5 . The method of producing a thin-film according to claim 3 , wherein the step of subjecting the precursor thin-film to a reaction with the reactive gas is performed at a temperature within a range of from 200° C. to 400° C. 6 . The method of producing a thin-film according to claim 4 , wherein the step of subjecting the precursor thin-film to a reaction with the reactive gas is performed at a temperature within a range of from 200° C. to 400° C.
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Classifications
Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances · CPC title
- C23C16/403Primary
of aluminium, magnesium or beryllium · CPC title
- C23C16/45553Primary
characterized by the use of precursors specially adapted for ALD · CPC title
by bubbling of carrier gas through liquid source material · CPC title
Metallocenes · CPC title
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Frequently asked questions
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- What does patent US2021155638A1 cover?
- where R1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.
- Who is the assignee on this patent?
- Adeka Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C16/403. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu May 27 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).