Embedding Low-K Materials in Antennas

Patent metadata

Field	Value
Publication number	US-2021328347-A1
Application number	US-202117360242-A
Country	US
Kind code	A1
Filing date	Jun 28, 2021
Priority date	Nov 30, 2012
Publication date	Oct 21, 2021
Grant date	—

Abstract

A device includes a patch antenna, which includes a feeding line, and a ground panel over the feeding line. The ground panel has an aperture therein. A low-k dielectric module is over and aligned to the aperture. A patch is over the low-k dielectric module.

First claim

What is claimed is:

1 . A method comprising:
placing a device die and a low-k dielectric module over a first carrier; encapsulating the device die and the low-k dielectric module in an encapsulant; simultaneously forming a ground panel and a feeding line overlying the encapsulant, wherein the feeding line and the ground panel are in contact with the low-k dielectric module, and the feeding line and the ground panel form portions of a patch antenna; and forming a patch of the patch antenna, wherein the patch is on an opposite side of the low-k dielectric module than the ground panel and the feeding line.

2 . The method of claim 1 , wherein the simultaneously forming the ground panel and the feeding line comprises:
depositing a metal layer; and patterning the metal layer to form the ground panel and the feeding line.

3 . The method of claim 1 , wherein the ground panel has a rectangular shaped contour, with an opening extending from a side into the rectangular shaped contour, wherein the feeding line extends into the opening.

4 . The method of claim 1 further comprising, after the encapsulating, planarizing the encapsulant, until the low-k dielectric module is revealed.

5 . The method of claim 4 , wherein after the low-k dielectric module is revealed, the device die is underlying and covered by a layer of the encapsulant.

6 . The method of claim 5 further comprising etching the layer of the encapsulant to form a plurality of openings penetrating through the layer of the encapsulant, with conductive features of the device die revealed through the plurality of openings.

7 . The method of claim 6 further comprising forming a redistribution line connecting the ground panel to the device die, wherein the redistribution line extends into one of the plurality of openings in the encapsulant.

8 . The method of claim 1 , wherein the group panel comprises portions on opposite sides of the feeding line.

9 . The method of claim 1 , wherein the feeding line is in physical contact with the encapsulant.

10 . A method comprising:
forming a feeding line and a ground panel; forming a conductive patch, wherein the conductive patch is on an opposite side of a low-k dielectric block and an encapsulant than the feeding line and the ground panel, wherein the conductive patch contacts the low-k dielectric block, and each of the ground panel and the feeding line is in contact with the encapsulant; connecting the feeding line to a device die; embedding the conductive patch in a first dielectric layer; and embedding the ground panel and the feeding line in a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are both in contact with the encapsulant, and are on opposite sides of the encapsulant.

11 . The method of claim 10 , wherein the low-k dielectric block has a dielectric constant lower than a dielectric constant of the encapsulant.

12 . The method of claim 10 , wherein each of the ground panel and the feeding line is further in physical contact with the low-k dielectric block.

13 . The method of claim 10 , wherein the connecting the feeding line and the forming the feeding line and the ground panel are performed in a common process.

14 . The method of claim 10 , wherein the low-k dielectric block overlaps an end portion of the feeding line, and the low-k dielectric block further extends beyond the end portion of the feeding line.

15 . A method comprising:
molding a dielectric block in a molding compound; depositing a metal layer over and in physical contact with the dielectric block and the molding compound; patterning the metal layer to form a feeding line and a ground panel, wherein each of the feeding line and the ground panel comprises a first portion over and contacting the dielectric block, and a second portion over and contacting the molding compound, and wherein the feeding line is further electrically connected to a device die; and forming a conductive patch on an opposite side of the dielectric block than the feeding line.

16 . The method of claim 15 further comprising:
molding the device die in the molding compound;
etching the molding compound to form openings in the molding compound, wherein electrical connectors of the device die are revealed through the openings; and
forming metal bumps filling the openings, wherein the feeding line is formed over and contacting one of the metal bumps.

17 . The method of claim 15 , wherein the conductive patch extends laterally beyond opposite edges of the dielectric block.

18 . The method of claim 15 , wherein edges of the conductive patch are laterally recessed from corresponding edges of the dielectric block.

19 . The method of claim 15 , wherein an end of the feeding line is between a first edge and a second edge of the dielectric block.

20 . The method of claim 15 further comprising:
forming the dielectric block; and
placing the dielectric block over a carrier, wherein the molding compound is molded over the carrier.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Monsen
• Chih Lai Wei
• Tsai Chung-Hao
• Hsieh Jeng-Shien
• Yeh En-Hsiang
• Wang Chuei-Tang

Classifications

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W72/241

  Dispositions, e.g. layouts · CPC title

• H10W70/093

  Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title

• H10W44/248

  for antennas · CPC title