Encapsulating low-k dielectric blocks along with dies in an encapsulant to form antennas

US11050153B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11050153-B2
Application numberUS-201916390427-A
CountryUS
Kind codeB2
Filing dateApr 22, 2019
Priority dateNov 30, 2012
Publication dateJun 29, 2021
Grant dateJun 29, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method includes placing a device die and a pre-formed dielectric block over a first carrier, encapsulating the device die and the pre-formed dielectric block in an encapsulating material, grinding a top side of the encapsulating material to expose the top side of the pre-formed dielectric block, removing the carrier from the encapsulating material, the pre-formed dielectric block, and the device die to reveal a bottom side of the pre-formed dielectric block, and forming a ground panel, a feeding line, and a patch on the encapsulating material. The ground panel, the feeding line, the patch, and the pre-formed dielectric block form a patch antenna.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: placing a device die and a pre-formed dielectric block over a first carrier; encapsulating the device die and the pre-formed dielectric block in an encapsulating material; grinding a top side of the encapsulating material to expose the top side of the pre-formed dielectric block; detaching the first carrier from the encapsulating material, the pre-formed dielectric block, and the device die to reveal a bottom side of the pre-formed dielectric block; and forming a ground panel, a feeding line, and a patch on the encapsulating material, wherein the ground panel, the feeding line, the patch, and the pre-formed dielectric block form a patch antenna. 2. The method of claim 1 , wherein the feeding line and the ground panel are in formed directly in contact with the pre-formed dielectric block. 3. The method of claim 1 , wherein the feeding line and the ground panel are formed in common processes, and the common processes comprise a common deposition process. 4. The method of claim 1 , wherein the forming the ground panel comprises: revealing a metal connector of the device die, wherein the ground panel is formed on the encapsulating material and electrically coupling to the metal connector. 5. The method of claim 1 further comprising: after the forming the ground panel and the forming the feeding line, performing the detaching the first carrier from the encapsulating material; before the forming the patch, attaching a second carrier, wherein the first carrier and the second carrier are attached to opposite sides of the encapsulating material and the device die; and after the forming the patch, detaching the second carrier from the encapsulating material. 6. The method of claim 1 , wherein the forming the ground panel, the feeding line, and the patch comprises plating processes. 7. The method of claim 1 , wherein the placing the pre-formed dielectric block comprises placing a dielectric blocking having a dielectric constant lower than a dielectric constant of the encapsulating material. 8. The method of claim 1 further comprising, at a time the patch antenna is formed, simultaneously forming an additional patch antenna, wherein the additional patch antenna comprises portions on opposite sides of the encapsulating material, and wherein the additional patch antenna is connected to the device die, and comprises an additional ground panel, an additional feeding line, and an additional patch. 9. A method comprising: placing a device die and a pre-formed dielectric block over a first carrier; encapsulating the device die and the pre-formed dielectric block in an encapsulating material, wherein the encapsulating material has a first dielectric constant higher than a second dielectric constant of the pre-formed dielectric block; grinding a top side of the encapsulating material to expose the top side of the pre-formed dielectric block; detaching the first carrier from the encapsulating material, the pre-formed dielectric block, and the device die to reveal a bottom side of the pre-formed dielectric block; and forming a ground panel, a feeding line, and a patch on the encapsulating material, wherein the ground panel, the feeding line, the patch, and the pre-formed dielectric block form a patch antenna. 10. The method of claim 9 , wherein the feeding line and the ground panel are in formed directly in contact with the pre-formed dielectric block. 11. The method of claim 9 , wherein the feeding line and the ground panel are formed in common processes, and the common processes comprise a common deposition process. 12. The method of claim 9 , wherein the forming the ground panel comprises: revealing a metal connector of the device die, wherein the ground panel is formed on the encapsulating material and electrically coupling to the metal connector. 13. The method of claim 9 further comprising: after the forming the ground panel and the forming the feeding line, performing the detaching the first carrier from the encapsulating material; before the forming the patch, attaching a second carrier, wherein the first carrier and the second carrier are attached to opposite sides of the encapsulating material and the device die; and after the forming the patch, detaching the second carrier from the encapsulating material. 14. The method of claim 9 , wherein the forming the ground panel, the feeding line, and the patch comprises plating processes. 15. The method of claim 9 further comprising, at a time the patch antenna is formed, simultaneously forming an additional patch antenna, wherein the additional patch antenna comprises portions on opposite sides of the encapsulating material, and wherein the additional patch antenna is connected to the device die, and comprises an additional ground panel, an additional feeding line, and an additional patch. 16. A method comprising: placing a device die and a pre-formed dielectric block over a first carrier; encapsulating the device die and the pre-formed dielectric block in an encapsulating material; grinding a top side of the encapsulating material to expose the top side of the pre-formed dielectric block; detaching the first carrier from the encapsulating material, the pre-formed dielectric block, and the device die to reveal a bottom side of the pre-formed dielectric block; forming a ground panel, a feeding line, and a patch on the encapsulating material, wherein the ground panel, the feeding line, the patch, and the pre-formed dielectric block form a patch antenna; and forming an additional patch antenna, wherein the additional patch antenna comprises portions on opposite sides of the encapsulating material, and wherein the additional patch antenna is connected to the device die, and comprises an additional ground panel, an additional feeding line, and an additional patch. 17. The method of claim 16 , wherein the feeding line and the ground panel are in formed directly in contact with the pre-formed dielectric block. 18. The method of claim 16 , wherein the feeding line and the ground panel are formed in common processes, and the common processes comprise a common deposition process. 19. The method of claim 16 , wherein the forming the ground panel comprises: revealing a metal connector of the device die, wherein the ground panel is formed on the encapsulating material and electrically coupling to the metal connector. 20. The method of claim 16 , wherein the forming the ground panel, the feeding line, and the patch comprises plating processes.

Assignees

Inventors

Classifications

  • the encapsulations exposing the passive side of the semiconductor body · CPC title

  • using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

  • Dispositions, e.g. layouts · CPC title

  • Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps · CPC title

  • for antennas · CPC title

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What does patent US11050153B2 cover?
A method includes placing a device die and a pre-formed dielectric block over a first carrier, encapsulating the device die and the pre-formed dielectric block in an encapsulating material, grinding a top side of the encapsulating material to expose the top side of the pre-formed dielectric block, removing the carrier from the encapsulating material, the pre-formed dielectric block, and the dev…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01Q1/38. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 29 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).