Substrate processing method and substrate processing system

Patent metadata

Field	Value
Publication number	US-2021287922-A1
Application number	US-202117189691-A
Country	US
Kind code	A1
Filing date	Mar 2, 2021
Priority date	Mar 11, 2020
Publication date	Sep 16, 2021
Grant date	—

Abstract

A substrate processing method of processing a substrate using a gas supplied to a chamber includes: (a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into of the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).

First claim

What is claimed is:

1 . A substrate processing method of processing a substrate using a gas supplied to a chamber, the method comprising:
(a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).

2 . The substrate processing method of claim 1 , further comprising:
(g) converting the pressure of the gas measured in (c) into a gas flow rate to calculate a normalized gas flow rate using Equation (1) below:
F=P 1× Fs ( t )/ Ps ( t )  (1)

wherein F denotes the normalized gas flow rate, P denotes the pressure of the gas measured in (c), t denotes an elapsed time from a start of the supply of the gas, Fs(t) denotes a set value of the gas flow rate at time t, and Ps(t) denotes a pressure of the gas at time t.

3 . The substrate processing method of claim 2 , wherein (f) includes calculating the total flow rate of the gas by integrating the gas flow rate normalized in (g) with respect to the time calculated in (e).

4 . The substrate processing method of claim 1 , wherein the time calculated in (e) includes a first time before the pressure of the gas measured in (c) reaches the threshold value during a rising of the pressure of the gas, and a second time after the pressure of the gas measured in (c) reaches the threshold value during a falling of the pressure of the gas, and
wherein the first time and the second time are set in (a).

5 . The substrate processing method of claim 2 , further comprising:
(h) determining whether or not the total flow rate of the gas calculated in (f) is within a target range.

6 . The substrate processing method of claim 5 , wherein when the total flow rate of the gas calculated in (f) is determined to be within the target range in (h), a substrate processing is continued.

7 . The substrate processing method of claim 5 , wherein when the total flow rate of the gas calculated in (f) is determined to be out of the target range in (h), the set value of the gas flow rate of the flow rate controller is subjected to a feedback control.

8 . The substrate processing method of claim 1 , wherein (a) to (f) are repeatedly performed for processing the substrate, and an average of total flow rates calculated in (f) in respective repetitions is calculated.

9 . The substrate processing method of claim 1 , wherein the threshold value is determined based on data on a flow rate of the gas measured by the flow rate controller and data on an actual flow rate of the gas.

10 . The substrate processing method of claim 4 , wherein the first time and the second time are determined based on data on a flow rate of the gas measured by the flow rate controller and data on an actual flow rate of the gas.

11 . The substrate processing method of claim 1 , wherein each of a time period during which the flow rate of the gas increases from zero to a target flow rate in (b) and a time period during which the flow rate of the gas decreases from the target flow rate to zero in (d) is equal to or less than three seconds.

12 . The substrate processing method of claim 1 , wherein the substrate is processed by repeatedly performing (b) and (d).

13 . The substrate processing method of claim 1 , wherein the substrate is processed by at least one of an atomic layer etching (ALE) process or an atomic layer deposition (ALD) process.

14 . A substrate processing system for processing a substrate using a gas, the system comprising:
a chamber including a gas inlet and a gas outlet; a flow rate controller configured to measure a pressure of the gas supplied to the chamber and to control a flow rate of the gas; and a controller, wherein the controller is configured to control the system to execute a processing including processes of: (a) setting a threshold value of the pressure of the gas, which is a control target in the flow rate controller; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).

15 . The substrate processing system of claim 14 , further comprising:
a gas supply configured to supply the gas into the chamber via the flow rate controller, wherein the gas supply includes a board configured to collect data measured by the flow rate controller.

Assignees

• Tokyo Electron Ltd

Inventors

• Matsuda risako
• Kinoshita Shinobu
• Oie Manabu
• Shouji Keita

Classifications

• H10P74/20

  characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P72/0604 Primary

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/72

  using electrostatic chucks · CPC title