Substrate treatment method and substrate treatment device

Patent metadata

Field	Value
Publication number	US-2021257209-A1
Application number	US-201916973554-A
Country	US
Kind code	A1
Filing date	Jun 4, 2019
Priority date	Jun 13, 2018
Publication date	Aug 19, 2021
Grant date	—

Abstract

A substrate treatment method according to an embodiment of the present disclosure includes a temperature raising step of raising a temperature of a concentrated sulfuric acid, and a liquid supply step of supplying the concentrated sulfuric acid having the raised temperature to a substrate placed on a substrate processing part.

First claim

1 . A substrate treatment method, comprising:
a temperature raising step of raising a temperature of a concentrated sulfuric acid; and a liquid supply step of supplying the concentrated sulfuric acid having the raised temperature to a substrate placed on a substrate processing part.

2 . The substrate treatment method of claim 1 , wherein in the temperature raising step, the temperature of the concentrated sulfuric acid is raised to a temperature in the range of 130 degrees C. to a boiling point of the concentrated sulfuric acid.

3 . The substrate treatment method of claim 1 , wherein the concentrated sulfuric acid does not contain a hydrogen peroxide.

4 . The substrate treatment method of claim 1 , further comprising: a pure water addition step of adding pure water to the concentrated sulfuric acid.

5 . The substrate treatment method of claim 4 , wherein in the pure water addition step, the pure water is added so that a concentration of a sulfuric acid in the concentrated sulfuric acid is 70 to 97% by mass.

6 . The substrate treatment method of claim 4 , further comprising: a subsequent pure water supply step of supplying the pure water added to the concentrated sulfuric acid to the substrate after the liquid supply step.

7 . The substrate treatment method of claim 4 , further comprising: a preliminary pure water supply step of supplying the pure water added to the concentrated sulfuric acid to the substrate before the liquid supply step.

8 . The substrate treatment method of claim 1 , wherein a film containing tungsten is formed on a surface of the substrate.

9 . The substrate treatment method of claim 1 , wherein a film containing tungsten or aluminum oxide, and containing titanium nitride is formed on a surface of the substrate.

10 . The substrate treatment method of claim 1 , wherein the liquid supply step includes a step of removing residues on the substrate after a dry etching or a CMP process.

11 . A substrate treatment device, comprising:
a substrate processing part configured to perform a liquid processing on a substrate; a concentrated sulfuric acid supply part; a temperature raising mechanism configured to raise a temperature of a concentrated sulfuric acid supplied from the concentrated sulfuric acid supply part; and a liquid supply part configured to supply the concentrated sulfuric acid having the raised temperature to the substrate placed the substrate processing part.

12 . The substrate treatment device of claim 11 , further comprising:
a pure water supply part; and an addition part configured to add pure water supplied from the pure water supply part to concentrated sulfuric acid.

13 . The substrate treatment device of claim 11 , wherein the concentrated sulfuric acid does not contain a hydrogen peroxide.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title