Substrate processing apparatus and substrate cleaning method

Patent metadata

Field	Value
Publication number	US-2021242015-A1
Application number	US-202017049001-A
Country	US
Kind code	A1
Filing date	Apr 6, 2020
Priority date	Apr 9, 2019
Publication date	Aug 5, 2021
Grant date	—

Abstract

Provided is a substrate processing apparatus including: a first cleaning member configured to clean a substrate by a contact face on which a skin layer is provided; and a second cleaning member configured to clean the substrate after cleaned by the first cleaning member, by a contact face on which a skin layer is not provided.

First claim

1 . A substrate processing apparatus comprising:
a first cleaning member configured to clean a substrate by a contact face on which a skin layer is provided; and a second cleaning member configured to clean the substrate after cleaned by the first cleaning member, by a contact face on which a skin layer is not provided.

2 . The substrate processing apparatus according to claim 1 , further comprising a cleaning liquid supplying unit configured to supply a cleaning liquid in which gas is dissolved to an inside of the second cleaning member,
wherein the cleaning liquid supplied to the inside of the second cleaning member reaches the substrate from a surface of the second cleaning member.

3 . The substrate processing apparatus according to claim 2 , wherein the cleaning liquid supplying unit comprises:
a supplying line connected to the inside of the second cleaning member; a gas dissolver configured to dissolve the gas to the cleaning liquid; and a filter provided between the gas dissolver and the second cleaning member on the supplying line.

4 . The substrate processing apparatus according to claim 2 , wherein the cleaning liquid supplying unit comprising:
a supplying line connected to the inside of the second cleaning member; a bubble containing cleaning liquid generator configured to generate bubble-dissolved cleaning liquid; and a filter provided between the bubble containing cleaning liquid generator and the second cleaning member on the supplying line.

5 . The substrate processing apparatus according to claim 2 , wherein the cleaning liquid reaching the substrate contains a bubble.

6 . The substrate processing apparatus according to claim 5 , wherein the cleaning liquid reaching the substrate contains the bubble whose diameter is less than 100 nm.

7 . The substrate processing apparatus according to claim 6 , wherein the cleaning liquid reaching the substrate does not contain the bubble whose diameter is equal to or more than 100 nm.

8 . A substrate cleaning method comprising:
a first cleaning step configured to clean a substrate by a contact face of a first cleaning member, a skin layer being provided on the contact face; and a second cleaning step after the first cleaning step configured to clean the substrate by a contact face of a second cleaning member, a skin layer not being provided on the contact face.

9 . The substrate cleaning method according to claim 8 , wherein the second cleaning step comprises:
supplying cleaning liquid containing a bubble whose diameter is less than 100 nm to an inside of the second cleaning member, and performing cleaning by the second cleaning member while causing the cleaning liquid to reach the substrate from a surface of the second cleaning member.

10 . The substrate cleaning method according to claim 8 , further comprising a step configured to, before the second cleaning member is firstly used, supply a bubble whose diameter is less than 100 nm to an inside of the second cleaning member to discharge the cleaning liquid from a surface of the second cleaning member.

11 . The substrate cleaning method according to claim 8 , further comprising a step configured to, after completing one substrate and before starting cleaning another substrate, supply a bubble whose diameter is less than 100 nm to an inside of the second cleaning member to discharge the cleaning liquid from a surface of the second cleaning member.

Assignees

• Ebara Corp

Inventors

• Ishibashi Tomoatsu

Classifications

• H10P72/0412 Primary

  using mainly scrubbing means, e.g. brushes · CPC title

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P70/15 Primary

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title