Substrate processing device having connection plates, substrate processing method

Patent metadata

Field	Value
Publication number	US-2021102289-A1
Application number	US-202017039874-A
Country	US
Kind code	A1
Filing date	Sep 30, 2020
Priority date	Oct 8, 2019
Publication date	Apr 8, 2021
Grant date	—

Abstract

Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

First claim

1 . A substrate processing device comprising:
an annular distribution ring; a plurality of connection plates continued to the distribution ring and having non-uniform impedances; a shower plate electrically connected to the plurality of connection plates; and a stage provided below the shower plate and facing the shower plate.

2 . The substrate processing device according to claim 1 , wherein at least one of the plurality of connection plates has a coil having one end electrically connected to the distribution ring and the other end electrically connected to the shower plate.

3 . The substrate processing device according to claim 2 , further comprising a chamber surrounding the shower plate and the stage, the chamber is provided with a pass-through allowing the substrate to be inserted and removed therethrough, wherein
the plurality of connection plates comprise at least one coil including the coil, the at least one coil is placed far from the pass-through.

4 . The substrate processing device according to claim 2 , further comprising a retractable impedance adjuster configured such that a magnetic bar is inserted into and removed from the coil.

5 . The substrate processing device according to claim 4 , wherein all of the plurality of connection plates have the coils, and the retractable impedance adjuster is provided to each of the coils.

6 . The substrate processing device according to claim 4 , wherein the retractable impedance adjustor has a micro gauge that is configured to indicate an amount of insertion of the magnetic bar into the coil.

7 . The substrate processing device according to claim 4 , wherein
the retractable impedance adjuster includes an accommodating section that accommodates a part of the magnetic bar; and a set screw that is inserted into a screw hole of the accommodating section so as to press and fix the magnetic bar to the accommodating section.

8 . The substrate processing device according to claim 1 , wherein at least one of the plurality of connection plates has a capacitive element having one end electrically connected to the distribution ring and the other end electrically connected to the shower plate.

9 . The substrate processing device according to claim 8 , wherein the capacitive element is a ceramic capacitor.

10 . The substrate processing device according to claim 8 , wherein the connection plate having the capacitive element includes a first thermal insulating member having a thermal conductivity lower than thermal conductivity of the shower plate, between the capacitive element and the shower plate.

11 . The substrate processing device according to claim 10 , wherein the first thermal insulating member contains at least one of Ni, Co, and Ti.

12 . The substrate processing device according to claim 8 , further comprising a second thermal insulating member having an annular shape fitted in an annular groove on an upper surface of the shower plate and formed by a material having a thermal conductivity lower than that of the shower plate, wherein
the connection plate having the capacitive element is in contact with the shower plate via the second thermal insulating member.

13 . The substrate processing device according to claim 12 , wherein the second thermal insulating member includes at least one of Ni, Co, and Ti.

14 . The substrate processing device according to claim 1 , further comprising a high frequency power application device connected to the distribution ring.

15 . The substrate processing device according to claim 1 , further comprising a shower plate heater configured to heat the shower plate.

16 . A substrate processing method comprising:
placing a substrate on a stage; and generating plasma between a shower plate and the stage by applying a high frequency power to the shower plate while providing gas between the shower plate and the stage from the shower plate facing the stage, wherein the high frequency power is supplied to the shower plate through a plurality of connection plates having non-uniform impedances.

17 . The substrate processing method according to claim 16 , wherein the high frequency power has a frequency of 27.12 MHz or more.

18 . The substrate processing method according to claim 16 , wherein
a chamber covering the shower plate and the stage is formed with a pass-through configured to insert and remove the substrate; and a plasma density at a location on the stage nearer the pass-through is equal to or lower than a plasma density at a location on the stage farther from the pass-through.

Assignees

• Asm Ip Holding Bv

Inventors

• Tsuji Naoto
• Yanagisawa Ippei
• Shimotori Miho
• Igarashi Makoto

Classifications

• H01J37/32174

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32431

  Constructional details of the reactor · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title