Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
US2021050245A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021050245-A1 |
| Application number | US-201916542062-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 15, 2019 |
| Priority date | Aug 15, 2019 |
| Publication date | Feb 18, 2021 |
| Grant date | — |
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A chuck is provided. The chuck comprises a plurality of lands protruding from a surface of the chuck, the lands defining a series of zones; and a trenched recessed from the surface of the chuck in at least one of the zones.
Opening claim text (preview).
What is claimed is: 1 . A chuck, comprising: a plurality of lands protruding from a surface of the chuck, the lands defining a series of zones; and a trench recessed from the surface of the chuck in at least one of the zones. 2 . The chuck of claim 1 , wherein series of zones includes a peripheral zone immediately adjacent to an outermost land of the plurality of lands and a plurality of inner zones surrounded by the peripheral zone, and the trench is formed in at least one of the inner zones at an area distal to a center of the chuck. 3 . The chuck of claim 2 , wherein the peripheral zone has a width smaller than a width of each of the inner ring zones. 4 . The chuck of claim 2 , wherein the trench in the at least one inner zones has a width less than a half width of the inner zones. 5 . The chuck of claim 2 , wherein a trench is formed in the peripheral zone at an area proximal to the center of the chuck. 6 . The chuck of claim 1 , wherein the series of zones includes a peripheral zone immediately adjacent to an outermost land of the plurality of lands and a plurality of inner zones surrounded by the peripheral zone, and the lands defining the series of inner zones are equally distant from each other. 7 . The chuck of claim 1 , wherein the series of zones include a peripheral zone immediately adjacent to an outermost land of the plurality of lands and a plurality of inner zones surrounded by the peripheral zone, and the outermost land has a height less than a height of the lands defining the inner zones. 8 . The chuck of claim 1 , wherein the trench of each of the zones has a depth at least ten times larger than a height of each of the lands. 9 . The chuck of claim 1 , further comprising a fluid port in fluid communication with the trench. 10 . The chuck of claim 1 , wherein the series of zones are arranged concentrically about a center zone of the chuck. 11 . The chuck of claim 1 , wherein the chuck is configured to retain a substrate, a superstrate, or a wafer to the surface thereof. 12 . The chuck of claim 1 , wherein the chuck is configured to hold a substrate, a superstrate, or a wafer by applying a negative pressure to a zone surrounded by the lands. 13 . A method of using a chuck, comprising: providing a chuck having a series of zones defined by a plurality of lands protruding from a surface of the chuck and a trenched recessed from the surface of the chuck in at least one of the series of zones; retaining a superstrate on the surface of the chuck; advancing the superstrate to be in contact with a formable material dispensed the substrate; curing the formable material with a curing source; and separating the superstrate from the cured formable material. 14 . The method of claim 12 , wherein the series of zones includes a peripheral zone immediately adjacent to an outermost land of the plurality of lands and a plurality of inner zones surrounded by the peripheral zone, and the trench is formed in each of the inner zones at an area distal to a center of the chuck. 15 . The method of claim 13 , wherein the trench is formed in each of the inner zone with a width less than a half width of each of the inner zone. 16 . The method of claim 13 , wherein the trench is formed in the peripheral zone in an area proximal to the center of the chuck. 17 . The method of claim 13 , wherein the trench is formed in each of the zones with a depth at least ten times larger than a height of each of the lands. 18 . The method of claim 12 , wherein the chuck further includes a vacuum port in fluid communication with each of the trenches. 19 . The method of claim 12 , wherein the series of zones includes a peripheral zone immediately adjacent to an outermost land of the plurality of lands and a plurality of inner zones surrounded by the peripheral zone, wherein the lands defining the series of inner zones are equally distant from each other. 20 . A method of manufacturing an article, comprising: dispensing a formable material on a substrate; retaining a superstrate with a superstrate chuck, wherein: the superstrate chuck being defined with a series of zones by a plurality of lands protruding from a surface of thereof; and a trench recessed from the surface of the superstrate chuck is formed in at least one of the series of zones; advancing the superstrate to be in contact with a formable material dispensed on the substrate; curing the formable material with a curing source; and separating the superstrate from the cured formable material.
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