Copper alloy particles, surface-coated copper-based particles, and mixed particles
US-2020055116-A1 · Feb 20, 2020 · US
US2021039192A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021039192-A1 |
| Application number | US-201916978822-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 26, 2019 |
| Priority date | Dec 27, 2018 |
| Publication date | Feb 11, 2021 |
| Grant date | — |
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A production method of an additive manufactured object according to an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers, wherein used as the pure copper powder is a pure copper powder with a Si coating formed thereon, and wherein the preheating temperature is set to be 400° C. or higher and less than 800° C. An object of the present invention is to provide a production method of an additive manufactured object using a pure copper powder with a Si coating formed thereon capable of suppressing the partial sintering of the pure copper powder caused by the preheating thereof in additive manufacturing based on the electron beam (EB) method, and suppressing the loss of the degree of vacuum caused by carbon (C) during the molding process, as well as to provide the optimal additive manufacturing conditions to be applied to such pure copper powder having a Si coating formed thereon.
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1 . A production method of an additive manufactured object according to an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers, wherein used as the pure copper powder is a pure copper powder with a Si coating formed thereon in which a Si adhesion amount is 5 to 200 wtppm, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si is 3 or less, and wherein the preheating temperature is set to be 400° C. or higher and less than 800° C. 2 . A production method of an additive manufactured object according to an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers, wherein used as the pure copper powder is a pure copper powder with a Si coating formed thereon in which, when Si is analyzed via WDX analysis, portions that are 1/10 or more of a maximum signal strength are 40% or higher of a whole particle, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si of a Si adhesion amount and a C adhesion amount is 3 or less, and wherein the preheating temperature is set to be 400° C. or higher and less than 800° C. 3 . A production method of an additive manufactured object according to an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers, wherein used as the pure copper powder is a pure copper powder with a Si coating formed thereon in which a film thickness of the Si coating is 5 nm or more and 300 nm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si of a Si adhesion amount and a C adhesion amount is 3 or less, and wherein the preheating temperature is set to be 400° C. or higher and less than 800° C. 4 . The production method of an additive manufactured object according to claim 3 , wherein molding conditions of the electron beam satisfy a relational expression (I) of ([voltage]×[current])/([beam diameter]×[scan speed])=2.3 or more and 6.0 or less; provided that a unit of each parameter shall be as follows: voltage (kV); current (mA); scan speed (mm/sec); and beam diameter (diameter) (mm). 5 . The production method of an additive manufactured object according to claim 3 , wherein molding conditions of the electron beam satisfy a relational expression (II) of ([voltage]×[current])/([beam diameter]×[scan speed]×[thickness of one layer of powder body])=45 or more and 90 or less; provided that a unit of each parameter shall be as follows: voltage (kV); current (mA); scan speed (mm/sec); beam diameter (diameter) (mm); and thickness of one layer of powder body (mm). 6 . The production method of an additive manufactured object according to claim 3 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 to 150 μm. 7 . The production method of an additive manufactured object according to claim 2 , wherein molding conditions of the electron beam satisfy a relational expression (I) of ([voltage]×[current])/([beam diameter]×[scan speed])=2.3 or more and 6.0 or less; provided that a unit of each parameter shall be as follows: voltage (kV); current (mA); scan speed (mm/sec); and beam diameter (diameter) (mm). 8 . The production method of an additive manufactured object according to claim 2 , wherein molding conditions of the electron beam satisfy a relational expression (II) of ([voltage]×[current])/([beam diameter]×[scan speed]×[thickness of one layer of powder body])=45 or more and 90 or less; provided that a unit of each parameter shall be as follows: voltage (kV); current (mA); scan speed (mm/sec); beam diameter (diameter) (mm); and thickness of one layer of powder body (mm). 9 . The production method of an additive manufactured object according to claim 2 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 to 150 μm. 10 . The production method of an additive manufactured object according to claim 1 , wherein molding conditions of the electron beam satisfy a relational expression (I) of ([voltage]×[current])/([beam diameter]×[scan speed])=2.3 or more and 6.0 or less; provided that a unit of each parameter shall be as follows: voltage (kV); current (mA); scan speed (mm/sec); and beam diameter (diameter) (mm). 11 . The production method of an additive manufactured object according to claim 1 , wherein molding conditions of the electron beam satisfy a relational expression (II) of ([voltage]×[current])/([beam diameter]×[scan speed]×[thickness of one layer of powder body])=45 or more and 90 or less; provided that a unit of each parameter shall be as follows: voltage (kV); current (mA); scan speed (mm/sec); beam diameter (diameter) (mm); and thickness of one layer of powder body (mm). 12 . The production method of an additive manufactured object according to claim 1 , wherein an average particle size D50 (median diameter) of the pure copper powder is 10 to 150 μm.
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