Substrate processing method, substrate processing device and etching liquid

Patent metadata

Field	Value
Publication number	US-2021032537-A1
Application number	US-201916965776-A
Country	US
Kind code	A1
Filing date	Jan 23, 2019
Priority date	Jan 30, 2018
Publication date	Feb 4, 2021
Grant date	—

Abstract

A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

First claim

1 . A substrate processing method, comprising:
holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate, the etching liquid containing an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material, the etching agent being a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protecting the second material from etching with the etching agent.

2 . The substrate processing method of claim 1 ,
wherein the protection agent is a silylating agent.

3 . The substrate processing method of claim 2 , further comprising:
separating the organic solvent from a used etching liquid serving as the etching liquid used in the supplying of the etching liquid.

4 . The substrate processing method of claim 1 ,
wherein the protection agent has a direct bond between a silicon atom and a nitrogen atom.

5 . The substrate processing method of claim 4 ,
wherein the protection agent is represented by a following Chemical Formula 1:

and
R 1 to R 5 each independently represent an alkyl group substituted with a halogen or an unsubstituted alkyl group.

6 . The substrate processing method of claim 4 ,
wherein the protection agent is represented by a following Chemical Formula 2:

and
R 6 to R 12 each independently represent an alkyl group or a hydrogen atom.

7 . The substrate processing method of claim 4 ,
wherein the protection agent is represented by a following Chemical Formula 3 :

and
R 13 to R 19 each independently represent an alkyl group.

8 . The substrate processing method of claim 1 , further comprising:
separating the organic solvent from a used etching liquid serving as the etching liquid used in the supplying of the etching liquid.

9 . The substrate processing method of claim 8 ,
wherein in the separating of the organic solvent, the organic solvent contained in the used etching liquid is separated from the used etching liquid by vaporizing the organic solvent.

10 . The substrate processing method of claim 9 ,
wherein the separating of the organic solvent includes: discharging the used etching liquid to a first drain line configured to discharge a processing liquid other than an organic processing liquid; vaporizing the organic solvent contained in the used etching liquid by heating the used etching liquid flowing through the first drain line; and discharging the organic solvent, which is vaporized in the vaporizing of the organic solvent, to a second drain line through a connection line configured to connect the second drain line configured to discharge the organic processing liquid and the first drain line.

11 . The substrate processing method of claim 10 ,
wherein a boiling point of the organic solvent is lower than a boiling point of water, and in the vaporizing of the organic solvent, the used etching liquid is heated to a temperature lower than the boiling point of the water and higher than the boiling point of the organic solvent.

12 . The substrate processing method of claim 10 ,
wherein the discharging of the organic solvent includes: liquefying the organic solvent, which is vaporized in the vaporizing of the organic solvent, in the connection line.

13 . The substrate processing method of claim 10 , further comprising:
dissolving and discharging a salt containing the fluorine atoms and remaining in the first drain line by allowing a cleaning liquid configured to dissolve the salt to flow into the first drain line.

14 . The substrate processing method of claim 9 ,
wherein the separating of the organic solvent includes: discharging the used etching liquid to a first drain line configured to discharge a processing liquid other than an organic processing liquid and storing the used etching liquid in a reservoir provided at a portion of the first drain line; vaporizing the organic solvent contained in the used etching liquid by heating the used etching liquid stored in the reservoir; and discharging the organic solvent, which is vaporized in the vaporizing of the organic solvent, to a second drain line through a connection line configured to connect the second drain line configured to discharge the organic processing liquid and the reservoir.

15 . The substrate processing method of claim 1 ,
wherein the etching agent is generated by dissolving a salt containing the fluorine atoms in the organic solvent.

16 . A substrate processing device, comprising:
a holder configured to hold a substrate; a supply configured to supply an etching liquid to the substrate held by the holder, the etching liquid containing an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material, the etching agent being a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protecting the second material from etching with the etching agent.

17 . The substrate processing device of claim 16 , further comprising:
a separation unit configured to separate the organic solvent from a used etching liquid serving as the etching liquid supplied to the substrate by the supply.

18 . The substrate processing device of claim 17 , further comprising:
a first drain line configured to discharge a processing liquid other than an organic processing liquid; and a second drain line configured to discharge the organic processing liquid, wherein the separation unit includes: a heater provided at the first drain line and configured to heat the used etching liquid flowing through the first drain line; and a connection line configured to connect the first drain line and the second drain line and guide the organic solvent, which is vaporized by being heated with the heater, to the second drain line.

19 . The substrate processing device of claim 17 , further comprising:
a first drain line configured to discharge a processing liquid other than an organic processing liquid; and a second drain line configured to discharge the organic processing liquid, wherein the separation unit includes: a reservoir provided at a portion of the first drain line and configured to store the used etching liquid discharged to the first drain line; a heater configured to heat the used etching liquid stored in the reservoir; and a connection line configured to connect the reservoir and the second drain line and discharge the organic solvent, which is vaporized by being heated with the heater, to the second drain line.

20 . An etching liquid, comprising:
an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on a substrate; and

Assignees

• Tokyo Electron Ltd

Inventors

• Hiroshiro Koukichi
• Sakazaki Tetsuya
• Kagawa Koji
• Sekiguchi Kenji
• Mizumoto Kazuyoshi

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title