Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US2020395243A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020395243-A1 |
| Application number | US-201916971450-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 7, 2019 |
| Priority date | Feb 21, 2018 |
| Publication date | Dec 17, 2020 |
| Grant date | — |
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A multilayer wiring forming method includes filling a via, which is formed in an insulating film including an oxide film formed on a wiring of a substrate and is extended to the wiring, by forming an electroless plating film, which does not diffuse into the oxide film, from a bottom surface of the via while using the wiring, which is exposed at the bottom surface of the via, as a catalyst.
Opening claim text (preview).
1 . A multilayer wiring forming method, comprising: filling a via, which is formed in an insulating film including an oxide film formed on a wiring of a substrate and is extended to the wiring, by forming an electroless plating film, which does not diffuse into the oxide film, from a bottom surface of the via while using the wiring, which is exposed at the bottom surface of the via, as a catalyst. 2 . The multilayer wiring forming method of claim 1 , wherein the wiring contains Co, Ni or Ru. 3 . A multilayer wiring forming method, comprising: filling a via, which is formed in an insulating film including an oxide film formed on a wiring of a substrate and is extended to the wiring, by forming an electroless plating film, which does not diffuse into the oxide film, from a bottom surface of the via while using a barrier film, which is exposed at the bottom surface of the via, as a catalyst. 4 . The multilayer wiring forming method of claim 3 , wherein the wiring contains Cu. 5 . The multilayer wiring forming method of claim 1 , wherein the electroless plating film contains Co and W. 6 . The multilayer wiring forming method of claim 5 , wherein the electroless plating film contains 1 at % to 20 at % of W, and a rest of the electroless plating film is made of Co and an inevitable impurity. 7 . The multilayer wiring forming method of claim 1 , wherein the electroless plating film contains Ni. 8 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a multilayer wiring forming system to perform a multilayer wiring forming method as claimed in claim 1 .
of insulating materials · CPC title
using a liquid · CPC title
Insulating materials thereof · CPC title
for electroless plating · CPC title
the principal metal being a transition metal · CPC title
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