Combinational Resistive Change Elements

Patent metadata

Field	Value
Publication number	US-2020388331-A1
Application number	US-201916434813-A
Country	US
Kind code	A1
Filing date	Jun 7, 2019
Priority date	Jun 7, 2019
Publication date	Dec 10, 2020
Grant date	—

Abstract

The present disclosure generally relates to combinations of resistive change elements and resistive change element arrays thereof. The present disclosure also generally relates to combinational resistive change elements and combinational resistive change element arrays thereof. The present disclosure additionally generally relates to devices and methods for programming and accessing combinations of resistive change elements. The present disclosure further generally relates to devices and methods for programming and accessing combinational resistive change elements.

First claim

What is claimed is:

1 . A combinational resistive change element comprising:
a first resistive change element, wherein said first resistive change element is adjustable between at least two resistive states; a second resistive change element, wherein said second resistive change element is adjustable between at least two resistive states; a conductive structure providing an electrical communication path between said first resistive change element and said second resistive change element; and wherein said combinational resistive change element is adjustable between multiple relational states involving ratios of resistances of resistive states of said first resistive change element and said second resistive change element.

2 . The combinational resistive change element of claim 1 , wherein said combinational resistive change element is capable of storing at least one bit of information as relational states.

3 . The combinational resistive change element of claim 1 , wherein said combinational resistive change element is capable of storing information as characters of a character set as relational states.

4 . The combinational resistive change element of claim 1 , wherein possible combinations of resistive states of said first resistive change element and said second resistive change element is a number greater than a number of relational states of said multiple relational states.

5 . The combinational resistive change element of claim 1 , wherein said multiple relational states also involve sums of resistances of resistive states of said first resistive change element and said second resistive change element.

6 . The combinational resistive change element of claim 1 , wherein said first resistive change element is shareable with at least one other combinational resistive change element and wherein said second resistive change element is shareable with at least one other combinational resistive change element.

7 . The combinational resistive change element of claim 1 , wherein said first resistive change element and said second resistive change element are separated a distance of at least a minimum feature size multiplied by three.

8 . The combinational resistive change element of claim 1 , wherein said first resistive change element and said second resistive change element are located on a same level.

9 . The combinational resistive change element of claim 1 , wherein said first resistive change element and said second resistive change element are located on different levels.

10 . The combinational resistive change element of claim 1 , wherein said first resistive change element and said second resistive change element are adjustable between different resistive states at the same time.

11 . The combinational resistive change element of claim 1 , wherein said first resistive change element and said second resistive change element are adjustable between different resistive states one after the other.

12 . The combinational resistive change element of claim 1 , wherein said first resistive change element has a first electrode, a second electrode, and a first resistive change material between said first electrode and said second electrode and wherein said second resistive change element has a third electrode, a fourth electrode, and a second resistive change material between said third electrode and said fourth electrode.

13 . The combinational resistive change element of claim 12 , wherein at least one of said first resistive change material or said second resistive change material comprises a nanotube fabric.

14 . The combinational resistive change element of claim 12 , wherein at least one of said first resistive change material or said second resistive change material comprises buckyballs.

15 . The combinational resistive change element of claim 12 , wherein at least one of said first resistive change material or said second resistive change material comprises graphene flakes.

16 . The combinational resistive change element of claim 12 , wherein at least one of said first resistive change material or said second resistive change material comprises nanocapsules.

17 . The combinational resistive change element of claim 12 , wherein at least one of said first resistive change material or said second resistive change material comprises nanohorns.

18 . The combinational resistive change element of claim 12 , wherein said at least two resistive states of said first resistive change element includes a low resistive state and a high resistive state, wherein a resistance of said low resistive state of said first resistive change element is less than a resistance of said high resistive state of said first resistive change element, wherein said at least two resistive states of said second resistive change element includes a low resistive state and a high resistive state, and wherein a resistance of said low resistive state of said second resistive change element is less than a resistance of said high resistive state of said second resistive change element.

19 . The combinational resistive change element of claim 18 , wherein said first resistive change element is adjustable between said low resistive state and said high resistive state by electrical stimuli causing current flow in different directions relative to said first electrode and said second electrode and wherein said second resistive change element is adjustable between said low resistive state and said high resistive state by electrical stimuli causing current flow in different directions relative to said third electrode and said fourth electrode.

20 . A combinational resistive change element comprising:
a first resistive change element, wherein said first resistive change element is adjustable between at least two resistive states, and wherein said first resistive change element is shareable with at least one other combinational resistive change element; a second resistive change element, wherein said second resistive change element is adjustable between at least two resistive states, and wherein said second resistive change element is shareable with at least one other combinational resistive change element; and a conductive structure providing an electrical communication path between said first resistive change element and said second resistive change element.

21 . The combinational resistive change element of claim 20 , wherein said first resistive change element and said second resistive change element are separated a distance of at least a minimum feature size multiplied by three.

22 . The combinational resistive change element of claim 20 , wherein said first resistive change element and said second resistive change element are located on a same level.

23 . The combinational resistive change element of claim 20 , wherein said first resistive change element and said second resistive change element are located on different levels.

Assignees

• Nantero Inc

Inventors

• Luo Jia
• Cleveland Lee E
• Chan Ton Yan Tony

Classifications

• H10K19/00

  Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 · CPC title

• G11C11/5664 Primary

  using organic memory material storage elements · CPC title

• G11C13/004 Primary

  Reading or sensing circuits or methods · CPC title

• G11C13/025

  using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes · CPC title

• G11C2213/79

  Array wherein the access device being a transistor · CPC title