Semiconductor memory device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016284868-A1
Application number	US-201615064735-A
Country	US
Kind code	A1
Filing date	Mar 9, 2016
Priority date	Mar 24, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.

First claim

What is claimed is:

1 . A semiconductor memory device comprising:
a semiconductor layer; a control gate electrode; an organic molecular layer provided between the semiconductor layer and the control gate electrode; and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.

2 . The device according to claim 1 , wherein carbon number of each of the alkyl chains is between 4 and 30 inclusive.

3 . The device according to claim 1 , wherein the first layer is a monomolecular film.

4 . The device according to claim 1 , further comprising an inorganic second insulating layer provided between the first insulating layer and the semiconductor layer.

5 . The device according to claim 1 , further comprising a third insulating layer between the organic molecular layer and the control gate electrode.

6 . The device according to claim 1 , wherein the first layer is chemically bonded to the semiconductor layer.

7 . The device according to claim 4 , wherein the first layer is chemically bonded to the second insulating layer.

8 . The device according to claim 1 , wherein the organic molecular layer has oxidation-reduction molecules.

9 . The device according to claim 1 , wherein the first insulating layer contains a structure formed by chemical bonding of a first precursor described by molecular formula (1) and a second precursor described by molecular formula (2):

wherein X, Y are independently selected from among silyl ether, phosphoryl ether, alkoxy, carbonyl, and ether, n is an integer greater than 0, R 1 to R 4 are independently selected from hydrogen, oxygen, silicon, hydrocarbon, halogen, halogenated silane, alkoxy silane, and silyl ether, and m is an integer greater than 0.

10 . A semiconductor memory device comprising:
a stacked body in which insulating layers and control gate electrodes are stacked alternately; a semiconductor layer facing at least one of the control gate electrodes; an organic molecular layer provided between the semiconductor layer and the at least one of the control gate electrodes; and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.

11 . The device according to claim 10 , wherein carbon number of each of the alkyl chains is between 4 and 30 inclusive.

12 . The device according to claim 10 , wherein the first layer is a monomolecular film.

13 . The device according to claim 10 , further comprising an inorganic second insulating layer provided between the first insulating layer and the semiconductor layer.

14 . The device according to claim 10 , further comprising a third insulating layer between the organic molecular layer and the at least one of the control gate electrodes.

15 . The device according to claim 10 , wherein the first layer is chemically bonded to the semiconductor layer.

16 . The device according to claim 13 , wherein the first layer is chemically bonded to the second insulating layer.

17 . The device according to claim 10 , wherein the organic molecular layer has oxidation-reduction molecules.

18 . The device according to claim 10 , wherein the first insulating layer contains a structure formed by chemical bonding of a first precursor described by molecular formula (1) and a second precursor described by molecular formula (2):

wherein X, Y are independently selected from among silyl ether, phosphoryl ether, alkoxy, carbonyl, and ether, n is an integer greater than 0, R 1 to R 4 are independently selected from hydrogen, oxygen, silicon, hydrocarbon, halogen, halogenated silane, alkoxy silane, and silyl ether, and m is an integer greater than 0.

19 . A method for manufacturing a semiconductor memory device, the method comprising:
forming a first layer on a semiconductor layer by immersing the semiconductor layer in a first solution containing a first precursor described by molecular formula (1); forming a second layer on the first layer by immersing the first layer in a second solution containing a second precursor described by molecular formula (2); forming an organic molecular layer containing oxidation-reduction molecules on a surface of the second layer; and forming a control gate electrode on the organic molecular layer:

wherein X, Y are independently selected from among silyl ether, phosphoryl ether, alkoxy, carbonyl, and ether, n is an integer greater than 0, R 1 to R 4 are independently selected from hydrogen, oxygen, silicon, hydrocarbon, halogen, halogenated silane, alkoxy silane, and silyl ether, and m is an integer greater than 0.

20 . The method according to claim 19 , further comprising forming an inorganic insulating layer on the semiconductor layer before forming the first layer.

Assignees

• Toshiba Kk

Inventors

• Terai Masaya
• Hattori Shigeki
• Nishizawa Hideyuki
• Asakawa Koji

Classifications

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P14/6342 Primary

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10D64/037 Primary

  comprising charge-trapping insulators · CPC title

• H01L21/28282

  Electricity · mapped topic

• H01L29/513

  Electricity · mapped topic