Atomic layer deposition of rhenium containing thin films

Patent metadata

Field	Value
Publication number	US-2020340114-A1
Application number	US-202016835849-A
Country	US
Kind code	A1
Filing date	Mar 31, 2020
Priority date	Dec 2, 2016
Publication date	Oct 29, 2020
Grant date	—

Abstract

Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.

First claim

1 . (canceled)

2 . A method for depositing an elemental rhenium thin film on a substrate, the method comprising two or more sequential deposition cycles each comprising contacting the substrate with a vapor-phase rhenium precursor and a vapor-phase second reactant, wherein the second reactant does not comprise a chalcogen, wherein when contacting the substrate with the vapor-phase rhenium precursor the substrate is not contacted with another metal, semi-metal or metalloid precursor, and wherein the thin film is an elemental rhenium thin film having a resistivity of about 10 to 500 microOhmcm.

3 . The method of claim 2 , wherein the method is an atomic layer deposition (ALD) process.

4 . The method of claim 2 , wherein the method is a cyclic chemical vapor deposition (CVD) method.

5 . The method of claim 2 , wherein the rhenium precursor is a rhenium halide.

6 . The method of claim 2 , wherein the second reactant comprises hydrogen.

7 . The method of claim 2 , wherein the second reactant comprises nitrogen.

8 . The method of claim 7 , wherein the second reactant comprises one or more of NH 3 , N 2 , NO 2 , and N 2 H 4 .

9 . The method of claim 2 , wherein the second reactant is a plasma reactant.

10 . The method of claim 2 , wherein the second reactant flows continuously during each deposition cycle.

11 . The method of claim 2 , wherein the two or more deposition cycles are carried out at a temperature of 300 to 500° C.

12 . The method of claim 2 , wherein the thin film comprises less than 20 at-% H and less than 5 at-% C as impurities.

13 . The method of claim 2 , wherein the thin film comprises less than 5 at-% Cl as impurities.

14 . The method of claim 2 , wherein the thin film is deposited on a three-dimensional structure with step coverage of greater than 90%.

15 . The method of claim 2 , wherein the thin film serves as a work function metal in a gate stack.

16 . The method of claim 2 , wherein the thin film serves as a metal capping layer.

17 . The method of claim 2 , wherein the thin film serves as a fill layer for a 3-dimensional structure.

18 . A cyclic vapor deposition method for depositing an elemental rhenium thin film on a substrate in a reaction chamber comprising one or more deposition cycles comprising:
contacting the substrate with a first vapor-phase rhenium precursor; and contacting the substrate with a second vapor-phase reactant, wherein the second vapor-phase reactant does not comprise a chalcogen, and wherein the one or more deposition cycles each deposit elemental rhenium.

19 . The method of claim 18 , wherein the thin film comprises less than 20 at-% H and less than 5 at-% C as impurities and has a resistivity of 10 to 500 microOhmcm.

20 . The method of claim 18 , wherein the one or more deposition cycles are carried out at a temperature of 300 to 500° C.

21 . The method of claim 18 , wherein the method is an atomic layer deposition (ALD) process in which the substrate is alternately and sequentially contacted with the first vapor-phase rhenium precursor and the second vapor-phase reactant.

Assignees

• Asm Ip Holding Bv

Inventors

• Hamalainen Jani
• Ritala Mikko
• Leskela Markku

Classifications

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title

• C23C16/305

  Sulfides, selenides, or tellurides · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title

• C23C16/08 Primary

  from metal halides · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title