Sputtering Target And Producing Method Thereof

Patent metadata

Field	Value
Publication number	US-2020283888-A1
Application number	US-202016741838-A
Country	US
Kind code	A1
Filing date	Jan 14, 2020
Priority date	Mar 5, 2019
Publication date	Sep 10, 2020
Grant date	—

Abstract

An object of the present invention is to provide a sputtering target that can suppress a generation amount of fine nodules which lead to an increase in substrate particles during sputtering, and a method for producing the same. A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.

First claim

What is claimed is:

1 . A ceramic sputtering target, the sputtering target having a surface roughness Ra on a sputtering surface of 0.5 μm or less and an Svk value measured with a laser microscope on the sputtering surface of 1.1 μm or less.

2 . The ceramic sputtering target according to claim 1 , wherein a number of micro-cracks confirmed by observation of a cross-sectional structure in a field of view at magnifications of 10,000 with an electron microscope is 20/mm or less on the sputtering surface.

3 . The ceramic sputtering target according to claim 1 , wherein the ceramic sputtering target comprises ITO having a Sn content of from 1 to 10% by mass in terms of SnO 2 .

4 . The ceramic sputtering target according to claim 1 , wherein the surface roughness Ra on the sputtering surface is 0.1 μm or more.

5 . A method for producing a ceramic sputtering target, the method comprises steps of:
preparing a ceramic sintered body; and subjecting the ceramic sintered body to surface grinding to form a sputtering surface, wherein a surface roughness Ra on the sputtering surface is 0.5 μm or less, and an Svk value measured with a laser microscope on the sputtering surface is 1.1 μm or less after the surface grinding.

6 . The method for producing the ceramic sputtering target according to claim 5 , wherein a grindstone finally used in the surface grinding of the ceramic sintered body has:
a count #400 or more and less than 500, and a degree of concentration of abrasive grains of 125 or more, or a count #500 or more and less than 800, and a degree of concentration of abrasive grains of 90 or more, or a count #800 or more, and a degree of concentration of abrasive grains of 75 or more.

7 . The method for producing the ceramic sputtering target according to claim 5 , wherein a number of micro-cracks confirmed by observation of a cross-sectional structure in a field of view at magnifications of 10,000 with an electron microscope is 20/mm or less on the sputtering surface after the surface grinding.

8 . The method for producing the ceramic sputtering target according to claim 5 , wherein the ceramic sputtering target comprises ITO having a Sn content of from 1 to 10% by mass in terms of SnO 2 .

9 . The method for producing the ceramic sputtering target according to claim 5 , wherein the surface roughness Ra on the sputtering surface is 0.1 μm or more.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Mizuguchi Tomoji
• Sasaoka Hidetoshi
• Nakamura Haruhi
• Gorai Atsushi

Classifications

• H01J37/3491

  Manufacturing of targets · CPC title

• C04B35/457

  based on tin oxides or stannates · CPC title

• C04B41/91

  involving the removal of part of the materials of the treated articles, e.g. etching · CPC title

• C23C14/3407 Primary

  Cathode assembly for sputtering apparatus, e.g. Target · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title