Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-2020246723-A1
Application number	US-202016782419-A
Country	US
Kind code	A1
Filing date	Feb 5, 2020
Priority date	Feb 6, 2019
Publication date	Aug 6, 2020
Grant date	—

Abstract

A substrate processing apparatus includes a supercritical fluid producing apparatus including a pump configured to send out a processing fluid; a processing container configured to perform a supercritical fluid processing on a substrate with a processing fluid in a supercritical state sent from the supercritical fluid producing apparatus; and a controller configured to control at least the supercritical fluid producing apparatus. When a pressure increase is performed within the processing container by using the processing fluid, the controller determines a first supply rate at which the processing fluid is supplied to the processing container based on a target time during which the pressure increase is performed, an amount of the processing fluid required for the pressure increase and a density of the processing fluid. Further, the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the first supply rate.

First claim

We claim:

1 . A substrate processing apparatus, comprising:
a supercritical fluid producing apparatus including a pump configured to send out a processing fluid; a processing container configured to perform a supercritical fluid processing on a substrate with a processing fluid in a supercritical state from the supercritical fluid producing apparatus; and a controller configured to control at least the supercritical fluid producing apparatus, wherein when a pressure increase is performed within the processing container by using the processing fluid, the controller determines a first supply rate at which the processing fluid is supplied to the processing container based on a target time during which the pressure increase is performed, an amount of the processing fluid required for the pressure increase and a density of the processing fluid, and the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the first supply rate.

2 . The substrate processing apparatus of claim 1 ,
wherein the controller adjusts a stroke length of the pump based on the first supply rate.

3 . The substrate processing apparatus of claim 1 ,
wherein the controller adjusts a number of strokes of the pump based on the first supply rate.

4 . The substrate processing apparatus of claim 1 ,
wherein the supercritical fluid producing apparatus further includes a circulation line configured to return the processing fluid from a downstream side of the pump to an upstream side of the pump, and the controller adjusts a flow rate of the processing fluid in the circulation line based on the first supply rate.

5 . The substrate processing apparatus of claim 1 ,
wherein an orifice configured to change a flow rate of the processing fluid with respect to the processing container is provided between the supercritical fluid producing apparatus and the processing container, and the controller adjusts the orifice based on the first supply rate.

6 . The substrate processing apparatus of claim 1 ,
wherein the controller determines the first supply rate based on the target time during which the pressure increase is performed, the amount of the processing fluid required for the pressure increase and the density of the processing fluid at an inlet of the pump.

7 . The substrate processing apparatus of claim 1 ,
wherein when a circulation of the processing fluid within the processing container is performed, the controller determines a second supply rate at which the processing fluid is supplied to the processing container based on a circulation time during which the circulation of the processing fluid within the processing container is performed, an amount of the processing fluid required for the circulation and a density of the processing fluid at an inlet of the pump, and the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the second supply rate.

8 . The substrate processing apparatus of claim 7 ,
wherein the first supply rate is higher than the second supply rate.

9 . The substrate processing apparatus of claim 1 ,
wherein when the processing fluid within the processing container is discharged, the controller determines a third supply rate at which the processing fluid is sent out from the pump based on a pressure of the processing fluid at an outlet of the supercritical fluid producing apparatus, and the pump sends out the processing fluid based on the third supply rate.

10 . A substrate processing method, comprising:
carrying a substrate into a processing container; performing a pressure increase within the processing container with a processing fluid from a supercritical fluid producing apparatus including a pump configured to send out the processing fluid; performing a circulation of the processing fluid by supplying the processing fluid to the processing container from the supercritical fluid producing apparatus and discharging the processing fluid from the processing container while maintaining a pressure at which the processing fluid within the processing container is kept in a supercritical state; and discharging the processing fluid from the processing container to set a pressure within the processing container to be lower than at least a critical pressure of the processing fluid, wherein, in the performing of the pressure increase, a first supply rate at which the processing fluid is supplied to the processing container is determined based on a target time during which the pressure increase is performed, an amount of the processing fluid required for the pressure increase and a density of the processing fluid, and the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the first supply rate.

11 . The substrate processing method of claim 10 ,
wherein, in the performing of the circulation of the processing fluid, a second supply rate at which the processing fluid is supplied to the processing container is determined based on a circulation time during which the circulation of the processing fluid within the processing container is performed, an amount of the processing fluid required for the circulation and a density of the processing fluid at an inlet of the pump, and the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the second supply rate.

12 . The substrate processing method of claim 10 ,
wherein, in the discharging of the processing fluid, a third supply rate at which the processing fluid is sent out from the pump is determined based on a pressure of the processing fluid at an outlet of the supercritical fluid producing apparatus, and the pump sends out the processing fluid based on the third supply rate.

13 . The substrate processing apparatus of claim 5 ,
wherein the controller determines the first supply rate based on the target time during which the pressure increase is performed, the amount of the processing fluid required for the pressure increase and the density of the processing fluid at an inlet of the pump.

14 . The substrate processing apparatus of claim 13 ,
wherein when a circulation of the processing fluid within the processing container is performed, the controller determines a second supply rate at which the processing fluid is supplied to the processing container based on a circulation time during which the circulation of the processing fluid within the processing container is performed, an amount of the processing fluid required for the circulation and a density of the processing fluid at an inlet of the pump, and the supercritical fluid producing apparatus supplies the processing fluid to the processing container based on the second supply rate.

15 . The substrate processing apparatus of claim 14 ,
wherein the first supply rate is higher than the second supply rate.

16 . The substrate processing apparatus of claim 15 ,
wherein when the processing fluid within the processing container is discharged, the controller determines a third supply rate at which the processing fluid is sent out from the pump based on a pressure of the processing fluid at an outlet of the supercritical fluid producing apparatus, and the pump sends out the processing fluid based on the third supply rate.

17 . The substrate processing method of claim 11 ,
wherein, in the discharging of the processing fluid, a third supply rate at which the processing fluid is sent out from the pump is determined based on a pres

Assignees

• Tokyo Electron Ltd

Inventors

• Goshi Gentaro

Classifications

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P72/0408 Primary

  for drying · CPC title

• H10P72/06

  Apparatus for monitoring, sorting, marking, testing or measuring · CPC title