Semiconductor Package Having a Laser-Activatable Mold Compound

Patent metadata

Field	Value
Publication number	US-2020185293-A1
Application number	US-201816213593-A
Country	US
Kind code	A1
Filing date	Dec 7, 2018
Priority date	Dec 7, 2018
Publication date	Jun 11, 2020
Grant date	—

Abstract

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

First claim

What is claimed is:

1 . A molded package, comprising:
a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound; a semiconductor die embedded in the laser-activatable mold compound and having a plurality of die pads; and an interconnect electrically connecting the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

2 . The molded package of claim 1 , wherein the interconnect comprises a plurality of wire stud bumps attached at a first end to the plurality of die pads of the semiconductor die and attached at a second end opposite the first end to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

3 . The molded package of claim 1 , wherein the interconnect comprises a plurality of metal pillars attached at a first end to the plurality of die pads of the semiconductor die and attached at a second end opposite the first end to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

4 . The molded package of claim 1 , wherein the interconnect comprises a plurality of vertical bond wires attached at a first end to the plurality of die pads of the semiconductor die and attached at a second end opposite the first end to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

5 . The molded package of claim 1 , further comprising a solder resist layer covering a portion of the first side of the laser-activatable mold compound so that at the first side only part of the metal pads and/or metal traces are exposed to form landing pads of the molded package.

6 . The molded package of claim 1 , wherein the plurality of die pads is disposed at a first side of the semiconductor die, wherein a second side of the semiconductor die opposite the first side is not covered by the laser-activatable mold compound, and wherein the molded package further comprises a glob top covering the second side of the semiconductor die.

7 . The molded package of claim 1 , wherein the plurality of die pads is disposed at a first side of the semiconductor die, wherein a second side of the semiconductor die opposite the first side is not covered by the laser-activatable mold compound, wherein the laser-activatable mold compound is thicker than the semiconductor die, and wherein the laser-activatable mold compound has a recessed region at the second side of the semiconductor die.

8 . The molded package of claim 7 , wherein the recessed region of the laser-activatable mold compound forms an open cavity within the molded package.

9 . The molded package of claim 7 , further comprising a heat sink disposed in the recessed region of the laser-activatable mold compound.

10 . The molded package of claim 1 , wherein the metal pads and/or metal traces at the first side of the laser-activatable mold compound are about 1 μm to about 80 μm thick.

11 . The molded package of claim 1 , wherein the semiconductor die includes an RF front end circuit, logic devices or is a controller.

12 . The molded package of claim 1 , wherein a first one of the metal pads at the first side of the laser-activatable mold compound is electrically connected to a first one of the die pads of the semiconductor die by the interconnect, and wherein in a vertical projection of a footprint of the first die pad onto the first side of the laser-activatable mold compound, the first metal pad is positioned outside the footprint of the first die pad.

13 . The molded package of claim 12 , wherein the first metal pad is connected to a first one of the metal traces at the first side of the laser-activatable mold compound, and wherein in the vertical projection, the first metal trace is positioned inside the footprint of the first die pad and vertically aligned with the first die pad.

14 . A method of manufacturing a molded package, the method comprising:
placing a semiconductor die on a carrier, the semiconductor die having a plurality of die pads facing away from the carrier; attaching an interconnect to the plurality of die pads of the semiconductor die before or after placing the semiconductor die on the carrier; embedding the semiconductor die and the interconnect in a laser-activatable mold compound; directing a laser at a first side of the laser-activatable mold compound to laser-activate a plurality of regions of the laser-activatable mold compound; and plating an electrically conductive material on the plurality of laser-activated regions of the laser-activatable mold compound to form metal pads and/or metal traces at the first side of the laser-activatable mold compound, wherein the interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

15 . The method of claim 14 , wherein attaching the interconnect to the plurality of die pads of the semiconductor die comprises attaching a plurality of wire stud bumps to the plurality of die pads of the semiconductor die.

16 . The method of claim 14 , wherein attaching the interconnect to the plurality of die pads of the semiconductor die comprises attaching a plurality of metal pillars to the plurality of die pads of the semiconductor die.

17 . The method of claim 14 , wherein attaching the interconnect to the plurality of die pads of the semiconductor die comprises attaching a plurality of vertical bond wires attached at a first end to the plurality of die pads of the semiconductor die.

18 . The method of claim 14 , further comprising:
covering a portion of the first side of the laser-activatable mold compound with a solder resist layer so that at the first side only part of the metal pads and/or metal traces are exposed to form landing pads of the molded package.

19 . The method of claim 14 , further comprising:
after plating the electrically conductive material on the plurality of laser-activated regions of the laser-activatable mold compound, removing the carrier from the semiconductor die to expose a side of the semiconductor die opposite the die pads; and covering the side of the semiconductor die exposed by removing the carrier with a glob top.

20 . The method of claim 14 , wherein embedding the semiconductor die and the interconnect in the laser-activatable mold compound comprises covering the interconnect with the laser-activatable mold compound at a side of the interconnect facing away from the carrier, the method further comprising:
thinning the laser-activatable mold compound to expose the interconnect at the side of the interconnect facing away from the carrier.

21 . The method of claim 14 , wherein embedding the semiconductor die and the interconnect in the laser-activatable mold compound comprises covering the interconnect with the laser-activatable mold compound at a side of the interconnect facing away from the carrier, the method further comprising:
drilling holes in the laser-activatable mold compound to expose the interconnect at the side of the interconnect facing away from the carrier.

22 . The method of claim 14 , wherein the interconnect protrudes from the laser-activatable mold compound at a side of the interconnect facing away from the carrier.

Assignees

• Infineon Technologies Ag

Inventors

• Schmalzl Stefan
• Chiang Chau Fatt
• Reiss Werner

Classifications

• H10W72/521

  Structures or relative sizes of bond wires · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/221

  Structures or relative sizes · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title